B. Heinemann - Publications, H-index & Citations

B. Heinemann

Leibniz Association

42H指数

230论文数

6.3K被引数

收录论文 14

发表时间

A Lens-Coupled On-Chip Antenna for Dual-Polarization SiGe HBT THz Direct Detector 用于双极化SiGe HBT THz直接探测器的透镜耦合片上天线

IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS

IF4.8

2019-11-01

PREAI

Grzyb, Janusz; Andree, Marcel; Jain, Ritesh; Heinemann, Bernd; Pfeiffer, Ullrich R.

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

PROCEEDINGS OF THE IEEE

IF25.9

2017-06-01

135

PREAI

Schroeter, Michael; Rosenbaum, Tommy; Chevalier, Pascal; Heinemann, Bernd; Voinigescu, Sorin P.; Preisler, Ed; Boeck, Josef; Mukherjee, Anindya

A 210-270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip 单透镜耦合SiGe HBT芯片的210-270 ghz圆极化FMCW雷达

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY

IF4

2016-11-01

118

PREAI

Grzyb, Janusz; Statnikov, Konstantin; Sarmah, Neelanjan; Heinemann, Bernd; Pfeiffer, Ullrich R.

Base doping and dopant profile control of SiGe npn and pnp HBTs

APPLIED SURFACE SCIENCE

IF6.9

2008-07-01

PREAI

Tillack, Bernd; Heinemann, Bernd; Knoll, Dieter; Ruecker, Holger; Yamamoto, Yuji

A 117 GHz LC-oscillator in SiGe:C BiCMOS technology

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2005-02-01

PREAI

Winkler, W; Borngräber, J; Heinemann, B

High-frequency SiGe:C HBTs with elevated extrinsic base regions 具有升高的非本征基极区的高频SiGe:C hbt

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2005-02-01

PREAI

Rücker, H; Heinemann, B; Barth, R; Knoll, D; Schley, P; Scholz, R; Tillack, B; Winkler, W

High performance SiGe:C HBTs using atomic layer base doping

APPLIED SURFACE SCIENCE

IF6.9

2004-03-01

PREAI

Tillack, B; Yamamoto, Y; Knoll, D; Heinemann, B; Schley, P; Senapati, B; Krüger, D

Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

APPLIED SURFACE SCIENCE

IF6.9

2004-03-01

PREAI

Winkler, W; Borngräber, J; Heinemann, B; Rücker, H; Barth, R; Bauer, J; Bolze, D; Drews, J; Ehwald, KE; Grabolla, T; Haak, U; Höppner, W; Knoll, D; Krüger, D; Kuck, B; Kurps, R; Marschmeyer, M; Richter, H; Schley, P; Schmidt, D; Scholz, R; Tillack, B; Wolansky, D; Wulf, HE; Yamamoto, Y; Zaumseil, P

Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect-transistors by antimony implantation

APPLIED PHYSICS LETTERS

IF3.6

2003-02-03

PREAI

Rücker, H; Heinemann, B; Barth, R; Bolze, D; Melnik, V; Krüger, D; Kurps, R

Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2002-04-08

PREAI

Orchowski, A; Rau, WD; Rücker, H; Heinemann, B; Schwander, P; Tillack, B; Ourmazd, A