Dominique Tournier - Publications, H-index & Citations

Dominique Tournier

centre national de la recherche scientifique (cnrs)

15H指数

182论文数

1.3K被引数

收录论文 7

发表时间

Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

PREAI

Planson, Dominique; Tournier, Dominique; Sonneville, Camille; Bevilacqua, Pascal; Phung, Luong Viet; Morel, Herve

Breakdown voltage capability of vertical 4H-SiC power devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

OAAI

Godignon, Philippe; Biscarrat, Jerome; Tranchesset, Miya; Lavieville, Romain; Tournier, Dominique; Brosselard, Pierre; Montserrat, Josep

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2015-05-01

PREAI

Alexandru, Mihaela; Banu, Viorel; Jorda, Xavier; Montserrat, Josep; Vellvehi, Miquel; Tournier, Dominique; Millan, Jose; Godignon, Philippe

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

APPLIED PHYSICS LETTERS

IF3.6

2014-02-24

OAAI

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Vergne, B.; Planson, D.

State of the art of high temperature power electronics

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2011-03-01

320

OAAI

Buttay, Cyril; Planson, Dominique; Allard, Bruno; Bergogne, Dominique; Bevilacqua, Pascal; Joubert, Charles; Lazar, Mihai; Martin, Christian; Morel, Herve; Tournier, Dominique; Raynaud, Christophe

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes 4.5 kV 4H-SiC肖特基二极管的势垒高度均匀性

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2006-10-01

PREAI

Bluet, J. M.; Ziane, D.; Guillot, G.; Tournier, D.; Brosselard, P.; Montserrat, J.; Godignon, P.

A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2003-09-01

OAAI

Tournier, D; Godignon, P; Montserrat, J; Planson, D; Raynaud, C; Chante, JP; de Palma, JF; Sarrus, F

研究方向