未登录Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors
Challa, S. R.; Witte, H.; Schmidt, G.; Blaesing, J.; Vega, N.; Kristukat, C.; Muller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, A.
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收藏Individually resolved luminescence from closely stacked GaN/AlN quantum wells
Sheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Blasing, Juergen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, Andre; Shen, Bo; Christen, Juergen; Wang, Xinqiang
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收藏Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers
Dadgar, A.; Groh, L.; Metzner, S.; Neugebauer, S.; Blaesing, J.; Hempel, T.; Bertram, F.; Christen, J.; Krost, A.; Andreev, Z.; Witzigmann, B.
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收藏Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
Sakalauskas, E.; Behmenburg, H.; Hums, C.; Schley, P.; Rossbach, G.; Giesen, C.; Heuken, M.; Kalisch, H.; Jansen, R. H.; Blaesing, J.; Dadgar, A.; Krost, A.; Goldhahn, R.
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收藏Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (vol 90, art no 022105, 2007)
Hums, C.; Blaesing, J.; Dadgar, A.; Diez, A.; Hempel, T.; Christen, J.; Krost, A.; Lorenz, K.; Alves, E.
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