logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
P

Paul S. Ho

university of texas system

57H指数
551论文数
1.2W被引数
收录论文 37
发表时间
logo
A model for statistical electromigration simulation with dependence on capping layer and Cu microstructure in two dimensions
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2016-07-01
err5
PREAI
errKraatz, Matthias; Gall, Martin; Zschech, Ehrenfried; Schmeisser, Dieter; Ho, Paul S.
err分享
err收藏
Second-harmonic microscopy of strain fields around through-silicon-vias
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-04-12
err8
PREAI
errCho, Yujin; Shafiei, Farbod; Mendoza, B. S.; Lei, Ming; Jiang, Tengfei; Ho, P. S.; Downer, M. C.
err分享
err收藏
Through-silicon via stress characteristics and reliability impact on 3D integrated circuits
errMRS BULLETIN
IF4.9
err2015-03-10
err58
errOAAI
errJiang, Tengfei; Im, Jay; Huang, Rui; Ho, Paul S.
err分享
err收藏
Materials issues and characterization of low-k dielectric materials
errMRS BULLETIN
IF4.9
err2013-11-29
err58
PREAI
errRyan, ET; McKerrow, AJ; Leu, JP; Ho, PS
err分享
err收藏
Low-dielectric-constant materials for ULSI interlayer-dielectric applications
errMRS BULLETIN
IF4.9
err2013-11-29
err260
PREAI
errLee, WW; Ho, PS
err分享
err收藏
Plasticity mechanism for copper extrusion in through-silicon vias for three-dimensional interconnects
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-11-20
err58
PREAI
errJiang, Tengfei; Wu, Chenglin; Spinella, Laura; Im, Jay; Tamura, Nobumichi; Kunz, Martin; Son, Ho-Young; Kim, Byoung Gyu; Huang, Rui; Ho, Paul S.
err分享
err收藏
Mode II electromigration failure mechanism in Sn-based Pb-free solder joints with Ni under-bump metallization
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-09-20
err16
PREAI
errWang, Yiwei; Ho, Paul S.
err分享
err收藏
Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-07-18
err31
PREAI
errChang, Yao-Feng; Ji, Li; Wu, Zhuo-Jie; Zhou, Fei; Wang, Yanzhen; Xue, Fei; Fowler, Burt; Yu, Edward T.; Ho, Paul S.; Lee, Jack C.
err分享
err收藏
Grain structure analysis and effect on electromigration reliability in nanoscale Cu interconnects
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-04-03
err34
PREAI
errCao, Linjun; Ganesh, K. J.; Zhang, Lijuan; Aubel, Oliver; Hennesthal, Christian; Hauschildt, Meike; Ferreira, Paulo J.; Ho, Paul S.
err分享
err收藏
Size effect on the electron wind force for electromigration at the top metal-dielectric interface in nanoscale interconnects
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-09-04
err7
PREAI
errWu, Zhuo-Jie; Ho, Paul S.
err分享
err收藏
Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-01-23
err106
PREAI
errRyu, Suk-Kyu; Jiang, Tengfei; Lu, Kuan H.; Im, Jay; Son, Ho-Young; Byun, Kwang-Yoo; Huang, Rui; Ho, Paul S.
err分享
err收藏
Micro-fabricated perforated polymer devices for long-term drug delivery (vol 13, pg 485, 2011)
errBIOMEDICAL MICRODEVICES
IF3.3
err2011-04-06
err0
errOAAI
errWu, Zhuo-Jie; Luo, Zhiquan; Rastogi, Ashish; Stavchansky, Salomon; Bowman, Phillip D.; Ho, Paul S.
err分享
err收藏
Micro-fabricated perforated polymer devices for long-term drug delivery
errBIOMEDICAL MICRODEVICES
IF3.3
err2011-02-24
err16
PREAI
errWu, Zhuo-Jie; Luo, Zhiquan; Rastogia, Ashish; Stavchansky, Salomon; Bowman, Phillip D.; Ho, Paul S.
err分享
err收藏
Physical Characterization of PECVD and PEALD Ru(-C) Films and Comparison with PVD Ruthenium Film PropertiesPECVD和PEALD Ru(-C) 膜的物理表征及其与PVD钌膜性能的比较
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2011-01-01
err18
PREAI
errWojcik, H.; Junige, M.; Bartha, W.; Albert, M.; Neumann, V.; Merkel, U.; Peeva, A.; Gluch, J.; Menzel, S.; Munnik, F.; Liske, R.; Utess, D.; Richter, I.; Klein, C.; Engelmann, H. J.; Ho, P.; Hossbach, C.; Wenzel, C.
err分享
err收藏
Development and characterization of a scalable microperforated device capable of long-term zero order drug release
errBIOMEDICAL MICRODEVICES
IF3.3
err2010-06-29
err9
PREAI
errRastogi, Ashish; Luo, Zhiquan; Wu, Zhuojie; Ho, Paul S.; Bowman, Phillip D.; Stavchansky, Salomon
err分享
err收藏
Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-11-11
err36
PREAI
errShi, H.; Bao, J.; Smith, R. S.; Huang, H.; Liu, J.; Ho, P. S.; McSwiney, M. L.; Moinpour, M.; Kloster, G. M.
err分享
err收藏
Nano-opto-mechanical characterization of neuron membrane mechanics under cellular growth and differentiation
errBIOMEDICAL MICRODEVICES
IF3.3
err2008-05-16
err11
PREAI
errGopal, Ashwini; Luo, Zhiquan; Lee, Jae Young; Kumar, Karthik; Li, Bin; Hoshino, Kazunori; Schmidt, Christine; Ho, Paul S.; Zhang, Xiaojing
err分享
err收藏
Investigation of diffusion and electromigration parameters for Cu-Sn intermetallic compounds in Pb-free solders using simulated annealing使用模拟退火研究无铅焊料中cu-sn金属间化合物的扩散和电迁移参数
errACTA MATERIALIA
IF9.3
err2007-05-01
err193
PREAI
errChao, Brook; Chae, Seung-Hyun; Zhang, Xuefeng; Lu, Kuan-Hsun; Im, Jay; Ho, P. S.
err分享
err收藏
Effect of supporting layer on growth of carbon nanotubes by thermal chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-11-02
err25
PREAI
errWang, Yunyu; Li, Bin; Ho, Paul S.; Yao, Zhen; Shi, Li
err分享
err收藏
Analysis of electromigration statistics for Cu interconnects
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-05-24
err27
PREAI
errHauschildt, M; Gall, M; Thrasher, S; Justison, P; Michaelson, L; Hernandez, R; Kawasaki, H; Ho, PS
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
B
Bin Li
H 指数: 76 · 论文数: 1.1K
Z
Zhi‐Quan Luo
H 指数: 72 · 论文数: 504
L
Li Shi
H 指数: 70 · 论文数: 382
黄睿 封面图
黄睿 (Rui Huang)
H 指数: 59 · 论文数: 455
E
Edward T. Yu
H 指数: 56 · 论文数: 337
查看更多