M. E. Levinshteĭn - Publications, H-index & Citations

M. E. Levinshteĭn

University of California System

32H指数

307论文数

6.0K被引数

收录论文 15

发表时间

Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2022-09-01

OAAI

Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.

Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism

NANOSCALE

IF5.1

2022-01-01

PREAI

Rehman, Adil; Notario, Juan Antonio Delgado; Sanchez, Juan Salvador; Meziani, Yahya Moubarak; Cywinski, Grzegorz; Knap, Wojciech; Balandin, Alexander A.; Levinshtein, Michael; Rumyantsev, Sergey

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2021-09-01

OAAI

Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.; Usikova, A. A.

Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias 低温下双异质结构p-inassbp/n-inas中红外光电二极管中的低频噪声: 光伏模式和正向偏置

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2020-12-01

OAAI

Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.

SiC-based electronics (100th anniversary of the Ioffe Institute)

PHYSICS-USPEKHI

IF3.4

2018-10-01

PREAI

Lebedev, A. A.; Ivanov, P. A.; Levinshtein, M. E.; Mokhov, E. N.; Nagalyuk, S. S.; Anisimov, A. N.; Baranov, P. G.

Diffusion of minority carriers against electric field (high injection level)

APPLIED PHYSICS LETTERS

IF3.6

2017-11-16

PREAI

Gert, A. V.; Dmitriev, A. P.; Levinshtein, M. E.; Yuferev, V. S.; Palmour, J. W.

Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

APPLIED PHYSICS LETTERS

IF3.6

2017-03-28

PREAI

Kozlovski, V. V.; Lebedev, A. A.; Levinshtein, M. E.; Rumyantsev, S. L.; Palmour, J. W.

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

APPLIED PHYSICS LETTERS

IF3.6

2017-02-24

PREAI

Kozlovski, V. V.; Lebedev, A. A.; Levinshtein, M. E. M. M. M. M. M.; Rumyantsev, S. L.; Palmour, J. W.

Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-05-14

PREAI

Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

The effect of a transverse magnetic field on 1/f noise in graphene

APPLIED PHYSICS LETTERS

IF3.6

2013-10-25

PREAI

Rumyantsev, S. L.; Coquillat, D.; Ribeiro, R.; Goiran, M.; Knap, W.; Shur, M. S.; Balandin, A. A.; Levinshtein, M. E.

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

APPLIED PHYSICS LETTERS

IF3.6

2001-08-06

PREAI

Rumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Adivarahan, V; Yang, J; Simin, G; Asif Khan, M

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

APPLIED PHYSICS LETTERS

IF3.6

1998-08-24

104

PREAI

Levinshtein, ME; Rumyantsev, SL; Gaska, R; Yang, JW; Shur, MS

Low-frequency noise in GaN/GaAlN heterojunctions

APPLIED PHYSICS LETTERS

IF3.6

1998-06-08

PREAI

Levinshtein, ME; Pascal, F; Contreras, S; Knap, W; Rumyantsev, SL; Gaska, R; Yang, JW; Shur, MS

Low frequency noise in two-dimensional metal-semiconductor field effect transistor

APPLIED PHYSICS LETTERS

IF3.6

1996-05-27

PREAI

Levinshtein, ME; Rumyantsev, SL; Simin, GS; Park, H; Peatman, WCB; Shur, MS

Low-frequency noise in 4H-silicon carbide junction field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

1996-05-06

PREAI

Palmour, JW; Levinshtein, ME; Rumyantsev, SL; Simin, GS

研究方向