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K

Koichi Kakimoto

Tokyo Institute of Technology

36H指数
483论文数
5.3K被引数
收录论文 33
发表时间
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Growth of bulk β-Ga2O3 crystals from melt without precious-metal crucible by pulling from a cold container
errSCIENTIFIC REPORTS
IF3.9
err2024-06-27
err13
errOAAI
errYoshikawa, A.; Kochurikhin, V.; Tomida, T.; Takahashi, I.; Kamada, K.; Shoji, Y.; Kakimoto, K.
err分享
err收藏
Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes通过Czochralski和定向凝固过程在硅晶体生长过程中熔炉中的氧和氮转移
errMATERIALS
IF3.2
err2022-03-01
err5
errOAAI
errKakimoto, Koichi; Liu, Xin; Nakano, Satoshi
err分享
err收藏
Sensitivity of oxygen sensors in silicon melt to temperature fluctuation
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err2
PREAI
errKakimoto, K; Noguchi, H; Eguchi, M
err分享
err收藏
Segregation of oxygen at a solid/liquid interface in silicon
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err10
PREAI
errKakimoto, K; Ozoe, H
err分享
err收藏
DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-10-02
err25
errOAAI
errKempisty, Pawel; Kangawa, Yoshihiro; Kusaba, Akira; Shiraishi, Kenji; Krukowski, Stanislaw; Bockowski, Michal; Kakimoto, Koichi; Amano, Hiroshi
err分享
err收藏
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics
errMATERIALS
IF3.2
err2017-08-15
err11
errOAAI
errKusaba, Akira; Li, Guanchen; von Spakovsky, Michael R.; Kangawa, Yoshihiro; Kakimoto, Koichi
err分享
err收藏
On the phase transformation of single-crystal 4H-SiC during nanoindentation
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2017-06-12
err47
PREAI
errMatsumoto, Mitsuhiro; Huang, Hu; Harada, Hirofumi; Kakimoto, Koichi; Yan, Jiwang
err分享
err收藏
Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation
errPROGRESS IN PHOTOVOLTAICS
IF7.6
err2015-11-06
err8
PREAI
errJiptner, Karolin; Miyamura, Yoshiji; Harada, Hirofumi; Gao, Bing; Kakimoto, Koichi; Sekiguchi, Takashi
err分享
err收藏
Single-Seed Casting Large-Size Monocrystalline Silicon for High-Effi ciency and Low-Cost Solar Cells
errENGINEERING
IF11.6
err2015-09-01
err8
errOAAI
errGao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi
err分享
err收藏
Alexander-Haasen Model of Basal Plane Dislocations in Single-Crystal Sapphire
errCRYSTAL GROWTH & DESIGN
IF3.4
err2014-07-11
err8
PREAI
errGao, B.; Nakano, S.; Miyazaki, N.; Kakimoto, K.
err分享
err收藏
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-04-14
err124
PREAI
errNagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu; Kakimoto, Koichi; Nose, Yoshitaro; Scarpulla, Michael A.; Yoshino, Kenji
err分享
err收藏
Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method
errCRYSTAL GROWTH & DESIGN
IF3.4
err2014-01-29
err47
PREAI
errGao, Bing; Kakimoto, Koichi
err分享
err收藏
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-09-13
err74
PREAI
errNagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu; Kakimoto, Koichi; Yoshino, Kenji
err分享
err收藏
Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions
errCRYSTAL GROWTH & DESIGN
IF3.4
err2013-05-20
err25
PREAI
errGao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.
err分享
err收藏
Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique
errCRYSTAL GROWTH & DESIGN
IF3.4
err2012-11-01
err18
PREAI
errGao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi
err分享
err收藏
Anisotropic Thermal Stress Simulation with Complex Crystal-Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon
errCRYSTAL GROWTH & DESIGN
IF3.4
err2012-10-18
err17
PREAI
errGao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi
err分享
err收藏
First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)
errPHYSICAL REVIEW B
IF3.7
err2012-08-08
err19
PREAI
errInoue, Masato; Kageshima, Hiroyuki; Kangawa, Yoshihiro; Kakimoto, Koichi
err分享
err收藏
Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling
errCRYSTAL GROWTH & DESIGN
IF3.4
err2011-12-19
err31
PREAI
errGao, Bing; Nakano, Satoshi; Kakimoto, Koichi
err分享
err收藏
Crystal Growth from the Melt under External Force Fields
errMRS BULLETIN
IF4.9
err2011-01-31
err34
PREAI
errRudolph, R.; Kakimoto, K.
err分享
err收藏
Global Simulation of Coupled Carbon and Oxygen Transport in a Unidirectional Solidification Furnace for Solar Cells
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2010-01-01
err54
PREAI
errGao, B.; Nakano, S.; Kakimoto, K.
err分享
err收藏

研究方向

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窦世学 封面图
窦世学 (Shi Xue Dou)
H 指数: 187 · 论文数: 2.6K
H
Hiroshi Amano
H 指数: 88 · 论文数: 1.8K
K
Kenji Kitamura
H 指数: 68 · 论文数: 759
T
Takashi Sekiguchi
H 指数: 68 · 论文数: 989
N
Nobuyuki Miyazaki
H 指数: 59 · 论文数: 463
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