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W

Wing Man Tang

hong kong polytechnic university

24H指数
155论文数
5.1K被引数
收录论文 35
发表时间
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A Flexible Artificial Spiking Photoreceptor Enabled by a Single VO2 Mott Memristor for the Spike-Based Electronic Retina由单个VO2 Mott忆阻器启用的柔性人工尖峰感光器，用于基于尖峰的电子视网膜
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-10-09
err2
PREAI
errHan, Chuan Yu; Zhao, Shujing; Fang, Sheng Li; Liu, Weihua; Tang, Wing Man; Lai, Peter To; Li, Can; Ma, Yuan Xiao; Song, Jia Qi; Li, Xin; Wang, Xiao Li; Ren, Wen Jun; Wang, Rui Lin; Huang, Xiao Dong; Zhang, Guo He; Geng, Li
err分享
err收藏
Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode
errAPPLIED SURFACE SCIENCE
IF6.9
err2022-12-01
err2
PREAI
errMa, Y. X.; Huang, X. D.; Lai, P. T.; Tang, W. M.
err分享
err收藏
Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric
errMATERIALS
IF3.2
err2022-03-18
err4
errOAAI
errMa, Yuan-Xiao; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics
errAPPLIED SURFACE SCIENCE
IF6.9
err2021-11-01
err6
PREAI
errMa, Y. X.; Su, H.; Tang, W. M.; Lai, P. T.
err分享
err收藏
Dependence of sensing performance of OTFT-based H2 sensor on channel length
errINTERNATIONAL JOURNAL OF HYDROGEN ENERGY
IF8.3
err2021-04-01
err8
PREAI
errLi, Bochang; Lai, P. T.; Tang, W. M.
err分享
err收藏
High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering
errAPPLIED SURFACE SCIENCE
IF6.9
err2021-04-01
err16
PREAI
errHan, Chuan Yu; Tang, Wing Man; Lai, Pui-To
err分享
err收藏
Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-10-05
err12
PREAI
errMa, Y. X.; Tang, W. M.; Lai, P. T.
err分享
err收藏
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
errAPPLIED SURFACE SCIENCE
IF6.9
err2019-11-01
err2
PREAI
errHuang, Yong; Xu, Jing-Ping; Liu, Lu; Cheng, Zhi-Xiang; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric用等离子体处理的Al2O3作为栅极电介质改善了少层MoS2 fet的界面和电性能
errAPPLIED SURFACE SCIENCE
IF6.9
err2019-07-01
err21
PREAI
errSong, Xingjuan; Xu, Jingping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
errAPPLIED SURFACE SCIENCE
IF6.9
err2019-02-01
err3
PREAI
errLiu, Lu; Cheng, Zhi-Xiang; Xu, Jing-Ping; Huang, Yong; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
A comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor
errSENSORS AND ACTUATORS B-CHEMICAL
IF7.7
err2018-04-01
err12
PREAI
errLiu, Y.; Tang, W. M.; Lai, P. T.
err分享
err收藏
Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode非晶碳化硅薄膜作为锂离子电池负极的电化学特性
errRSC ADVANCES
IF4.6
err2018-01-01
err56
errOAAI
errHuang, X. D.; Zhang, F.; Gan, X. F.; Huang, Q. A.; Yang, J. Z.; Lai, P. T.; Tang, W. M.
err分享
err收藏
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-07-31
err4
errOAAI
errHuang, Yong; Xu, Jing-Ping; Liu, Lu; Cheng, Zhi-Xiang; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-07-11
err16
PREAI
errMa, Y. X.; Han, C. Y.; Tang, W. M.; Lai, P. T.
err分享
err收藏
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-11-08
err8
errOAAI
errHuang, Yong; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man
err分享
err收藏
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-07-15
err5
PREAI
errCheng, Z. X.; Xu, J. P.; Liu, L.; Huang, Y.; Lai, P. T.; Tang, W. M.
err分享
err收藏
Suppressing the Coffee-Ring Effect in Semitransparent MnO2 Film for a High-Performance Solar-Powered Energy Storage Window抑制半透明MnO2膜中的咖啡环效应，用于高性能太阳能储能窗
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2016-04-01
err28
PREAI
errJin, Huanyu; Qian, Jiasheng; Zhou, Limin; Yuan, Jikang; Huang, Haitao; Wang, Yu; Tang, Wing Man; Chan, Helen Lai Wa
err分享
err收藏
Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-08-21
err6
PREAI
errLiu, Y.; Tang, W. M.; Lai, P. T.
err分享
err收藏
High-performance organic thin-film transistor by using LaNbO as gate dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-07-20
err22
PREAI
errHan, C. Y.; Song, J. Q.; Tang, W. M.; Leung, C. H.; Lai, P. T.
err分享
err收藏
Aqueous Manganese Dioxide Ink for Paper-Based Capacitive Energy Storage Devices
errANGEWANDTE CHEMIE-INTERNATIONAL EDITION
IF16.9
err2015-04-17
err67
PREAI
errQian, Jiasheng; Jin, Huanyu; Chen, Bolei; Lin, Mei; Lu, Wei; Tang, Wing Man; Xiong, Wei; Chan, Lai Wa Helen; Lau, Shu Ping; Yuan, Jikang
err分享
err收藏

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