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D.A. Antoniadis

samsung

69H指数
528论文数
1.7W被引数
收录论文 35
发表时间
Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors纳米级氧化物沟道铁电场效应晶体管中的离散铁电极化切换
err2025-02-13
err0
PREAI
errShao, Yanjie; Borujeny, Elham Rafie; Fidalgo, Jorge Navarro; Huang, John Chao-Chung; Espedal, Tyra E.; Antoniadis, Dimitri A.; del Alamo, Jesus A.
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Antiferroelectric negative capacitance from a structural phase transition in zirconia
err2022-03-09
err35
errOAAI
errHoffmann, Michael; Wang, Zheng; Tasneem, Nujhat; Zubair, Ahmad; Ravindran, Prasanna Venkatesan; Tian, Mengkun; Gaskell, Anthony Arthur; Triyoso, Dina; Consiglio, Steven; Tapily, Kandabara; Clark, Robert; Hur, Jae; Pentapati, Sai Surya Kiran; Lim, Sung Kyu; Dopita, Milan; Yu, Shimeng; Chern, Winston; Kacher, Josh; Reyes-Lillo, Sebastian E.; Antoniadis, Dimitri; Ravichandran, Jayakanth; Slesazeck, Stefan; Mikolajick, Thomas; Khan, Asif Islam
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A Density Metric for Semiconductor Technology
err2020-04-01
err29
PREAI
errWong, H. -S. Philip; Akarvardar, Kerem; Antoniadis, Dimitri; Bokor, Jeffrey; Hu, Chenming; King-Liu, Tsu-Jae; Mitra, Subhasish; Plummer, James D.; Salahuddin, Sayeef
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Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors
err2019-08-09
err18
errOAAI
errSrimani, T.; Hills, G.; Zhao, X.; Antoniadis, D.; del Alamo, J. A.; Shulaker, M. M.
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Integration of InGaAs MOSFETs and GaAs/AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
err2017-12-07
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errOAAI
errKumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao
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Monolithic integration of InGaAs n-FETs and lasers on Ge substrate
err2017-02-27
err2
errOAAI
errKumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Li, Daosheng; Panah, Saeid Masudy; Liang, Gengchiau; Yoon, Soon-Fatt; Gong, Xiao; Antoniadis, Dimitri; Yeo, Yee-Chia
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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
err2016-11-10
err447
PREAI
errNourbakhsh, Amirhasan; Zubair, Ahmad; Sajjad, Redwan N.; Tavakkoli, Amir K. G.; Chen, Wei; Fang, Shiang; Ling, Xi; Kong, Jing; Dresselhaus, Mildred S.; Kaxiras, Efthimios; Berggren, Karl K.; Antoniadis, Dimitri; Palacios, Tomas
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Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
err2016-09-28
err160
PREAI
errYu, Lili; El-Damak, Dina; Radhakrishna, Ujwal; Ling, Xi; Zubair, Ahmad; Lin, Yuxuan; Zhang, Yuhao; Chuang, Meng-Hsi; Lee, Yi-Hsien; Antoniadis, Dimitri; Kong, Jing; Chandrakasan, Anantha; Palacios, Tomas
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A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications
err2016-08-01
err19
PREAI
errChoi, Pilsoon; Radhakrishna, Ujwal; Boon, Chirn-Chye; Antoniadis, Dimitri; Peh, Li-Shiuan
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Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator
err2012-11-27
err19
errOAAI
errKim, D-H; del Alamo, J. A.; Antoniadis, D. A.; Li, J.; Kuo, J-M; Pinsukanjana, P.; Kao, Y-C; Chen, P.; Papavasiliou, A.; King, C.; Regan, E.; Urteaga, M.; Brar, B.; Kim, T-W
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Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
err2012-05-09
err42
errOAAI
errTeherani, James T.; Chern, Winston; Antoniadis, Dimitri A.; Hoyt, Judy L.; Ruiz, Liliana; Poweleit, Christian D.; Menendez, Jose
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Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene
err2011-06-02
err42
PREAI
errDimitrakopoulos, Christos; Grill, Alfred; McArdle, Timothy J.; Liu, Zihong; Wisnieff, Robert; Antoniadis, Dimitri A.
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Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
err2010-02-11
err17
PREAI
errHashemi, Pouya; Kim, Meekyung; Hennessy, John; Gomez, Leonardo; Antoniadis, Dimitri A.; Hoyt, Judy L.
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Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
err2009-08-26
err25
PREAI
errCheng, Cheng-Wei; Hennessy, John; Antoniadis, Dimitri; Fitzgerald, Eugene A.
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