S. Aggarwal - Publications, H-index & Citations

S. Aggarwal

Kurukshetra University

39H指数

153论文数

5.1K被引数

收录论文 40

发表时间

Synergistic effect accomplished in blistering/exfoliation of silicon by Ar+ ions followed by H2+ ions implantation 通过Ar+离子随后进行H2+离子注入，在硅的起泡/剥落过程中实现的协同效应

Applied Surface Science

IF6.9

2025-12-28

PREAI

Nidhi Shekhawat; Sunil Ojha; Sanjeev Aggarwal

Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films

MRS BULLETIN

IF4.9

2013-11-29

PREAI

Auciello, O; Gruverman, A; Tokumoto, H; Prakash, SA; Aggarwal, S; Ramesh, R

High-resolution piezoresponse force microscopy investigation of imprint in ferroelectric thin films

APPLIED PHYSICS LETTERS

IF3.6

2006-09-29

PREAI

Anbusathaiah, V.; Nagarajan, V.; Aggarwal, S.

Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments

APPLIED PHYSICS LETTERS

IF3.6

2005-06-24

174

OAAI

Nagarajan, V; Aggarwal, S; Gruverman, A; Ramesh, R; Waser, R

Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer

APPLIED PHYSICS LETTERS

IF3.6

2002-05-13

PREAI

Liu, BT; Maki, K; Aggarwal, S; Nagaraj, B; Nagarajan, V; Salamanca-Riba, L; Ramesh, R; Dhote, AM; Auciello, O

Self-organized pattern formation in the oxidation of supported iron thin films. I. An experimental study

PHYSICAL REVIEW B

IF3.7

2001-06-21

PREAI

Shinde, SR; Ogale, AS; Ogale, SB; Aggarwal, S; Novikov, V; Williams, ED; Ramesh, R

Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories 用于非易失性铁电存储器的铁电薄膜和异质结构的科学与技术

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

2001-04-01

283

PREAI

Ramesh, R; Aggarwal, S; Auciello, O

Oxide nanostructures through self-assembly

APPLIED PHYSICS LETTERS

IF3.6

2001-03-05

PREAI

Aggarwal, S; Ogale, SB; Ganpule, CS; Shinde, SR; Novikov, VA; Monga, AP; Burr, MR; Ramesh, R; Ballarotto, V; Williams, ED

Enhanced-response pyroelectric heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2000-10-09

PREAI

Tipton, CW; Kirchner, K; Godfrey, R; Cardenas, M; Aggarwal, S; Li, H; Ramesh, R

Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O12/ZrO2 heterostructures grown on silicon

APPLIED PHYSICS LETTERS

IF3.6

2000-09-04

PREAI

Canedy, CL; Aggarwal, S; Li, H; Venkatesan, T; Ramesh, R; Van Keuls, FW; Romanofsky, RR; Miranda, FA

Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories

ACTA MATERIALIA

IF9.3

2000-08-01

PREAI

Aggarwal, S; Nagaraj, B; Jenkins, IG; Li, H; Sharma, RP; Salamanca-Riba, L; Ramesh, R; Dhote, AM; Krauss, AR; Auciello, O

Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films

APPLIED PHYSICS LETTERS

IF3.6

2000-07-17

114

PREAI

Nagarajan, V; Alpay, SP; Ganpule, CS; Nagaraj, BK; Aggarwal, S; Williams, ED; Roytburd, AL; Ramesh, R

Role of 90° domains in lead zirconate titanate thin films

APPLIED PHYSICS LETTERS

IF3.6

2000-07-10

186

PREAI

Ganpule, CS; Nagarajan, V; Li, H; Ogale, AS; Steinhauer, DE; Aggarwal, S; Williams, E; Ramesh, R; De Wolf, P

Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset

APPLIED PHYSICS LETTERS

IF3.6

2000-07-03

143

OAAI

Friessnegg, T; Aggarwal, S; Ramesh, R; Nielsen, B; Poindexter, EH; Keeble, DJ

A study of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

2000-07-01

PREAI

Friessnegg, T; Aggarwal, S; Nielsen, B; Ramesh, R; Keeble, DJ; Poindexter, EH

Near-field second-harmonic microscopy of thin ferroelectric films

OPTICS LETTERS

IF3.3

2000-06-01

OAAI

Smolyaninov, II; Liang, HY; Lee, CH; Davis, CC; Aggarwal, S; Ramesh, R

Hole-state density of La1-xSrxCoO3-δ(0≤x≤0.5) across the insulator/metal phase boundary

PHYSICAL REVIEW B

IF3.7

2000-02-15

PREAI

Moodenbaugh, AR; Nielsen, B; Sambasivan, S; Fischer, DA; Friessnegg, T; Aggarwal, S; Ramesh, R; Pfeffer, RL

Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors

APPLIED PHYSICS LETTERS

IF3.6

2000-02-14

PREAI

Aggarwal, S; Perusse, SR; Kerr, CJ; Ramesh, R; Romero, DB; Evans, JT; Boyer, L; Velasquez, G

Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films

APPLIED PHYSICS LETTERS

IF3.6

1999-12-27

PREAI

Nagarajan, V; Ganpule, CS; Nagaraj, B; Aggarwal, S; Alpay, SP; Roytburd, AL; Williams, ED; Ramesh, R

Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

APPLIED PHYSICS LETTERS

IF3.6

1999-12-13

103

PREAI

Ganpule, CS; Stanishevsky, A; Aggarwal, S; Melngailis, J; Williams, E; Ramesh, R; Joshi, V; de Araujo, CP

研究方向