Claude Weisbuch - Publications, H-index & Citations

Claude Weisbuch

University of California System

65H指数

325论文数

1.8W被引数

收录论文 87

发表时间

Unexpected origin of the quantum efficiency reduction in long-wavelength (In, Ga)N light-emitting diodes

PHYSICAL REVIEW APPLIED

IF4.4

2025-03-03

PREAI

Tak, Tanay; Chow, Yi Chao; Nakamura, Shuji; Denbaars, Steven P.; Weisbuch, Claude; Speck, James S.

Investigation of the cesium activation of GaN photocathodes by low-energy electron microscopy

PHYSICAL REVIEW APPLIED

IF4.4

2024-09-03

PREAI

Sauty, Mylene; Johnson, Cameron W.; Tak, Tanay; Ho, Wan Ying; Chow, Yi Chao; Speck, James S.; Schmid, Andreas K.; Weisbuch, Claude; Peretti, Jacques

Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy

PHYSICAL REVIEW APPLIED

IF4.4

2023-12-26

OAAI

Tak, Tanay; Johnson, Cameron W.; Ho, Wan Ying; Wu, Feng; Sauty, Mylene; Rebollo, Steve; Schmid, Andreas K.; Peretti, Jacques; Wu, Yuh-Renn; Weisbuch, Claude; Speck, James S.

Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrodinger equation

PHYSICAL REVIEW APPLIED

IF4.4

2023-10-26

OAAI

Tsai, Tsung-Yin; Qwah, Kai Shek; Banon, Jean-Philippe; Filoche, Marcel; Weisbuch, Claude; Wu, Yuh-Renn; Speck, James S.

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495-685 nm) InGaN light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2023-08-28

OAAI

Chow, Yi Chao; Tak, Tanay; Wu, Feng; Ewing, Jacob; Nakamura, Shuji; Denbaars, Steven P.; Wu, Yuh-Renn; Weisbuch, Claude; Speck, James S.

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)使用低能电子显微镜 (LEEM) 测量的p-n GaN二极管中的稳态结电流分布

APPLIED PHYSICS LETTERS

IF3.6

2023-07-17

OAAI

Ho, Wan Ying; Johnson, Cameron W.; Tak, Tanay; Sauty, Mylene; Chow, Yi Chao; Nakamura, Shuji; Schmid, Andreas; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)使用电子发射光谱 (EES) 测量p-gan中的少数载流子扩散长度

APPLIED PHYSICS LETTERS

IF3.6

2023-05-22

OAAI

Ho, Wan Ying; Chow, Yi Chao; Nakamura, Shuji; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

JOURNAL OF LUMINESCENCE

IF3.6

2023-05-01

OAAI

Mickevic, J.; Valkiunaite, E.; Podlipskas, Z.; Nomeika, K.; Nargelas, S.; Tamulaitis, G.; Chow, Y. C.; Nakamura, S.; Speck, J. S.; Weisbuch, C.; Aleksieju, R.

Detection of hot electrons originating from an upper valley at ∼1.7 eV above the F valley in wurtzite GaN using electron emission spectroscopy 使用电子发射光谱检测来自纤锌矿GaN中F谷上方〜1.7 eV的上谷的热电子

PHYSICAL REVIEW B

IF3.7

2023-01-06

OAAI

Ho, Wan Ying; Alhassan, Abdullah I.; Lynsky, Cheyenne; Chow, Yi Chao; Myers, Daniel J.; DenBaars, Steven P.; Nakamura, Shuji; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2022-11-01

OAAI

Chow, Y. C.; Lynsky, C.; Nakamura, S.; DenBaars, S. P.; Weisbuch, C.; Speck, J. S.

Excitons in a disordered medium: A numerical study in InGaN quantum wells

PHYSICAL REVIEW RESEARCH

IF4.2

2022-10-04

OAAI

David, Aurelien; Weisbuch, Claude

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In, Ga)N Alloy Quantum Barriers 使用 (In，Ga)N合金量子势垒改善绿色III族氮化物led的垂直载流子传输

PHYSICAL REVIEW APPLIED

IF4.4

2022-05-31

OAAI

Lynsky, Cheyenne; Lheureux, Guillaume; Bonef, Bastien; Qwah, Kai Shek; White, Ryan C.; DenBaars, Steven P.; Nakamura, Shuji; Wu, Yuh-Renn; Weisbuch, Claude; Speck, James S.

Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory

PHYSICAL REVIEW B

IF3.7

2022-03-31

OAAI

Banon, Jean-Philippe; Pelletier, Pierre; Weisbuch, Claude; Mayboroda, Svitlana; Filoche, Marcel

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

PHYSICAL REVIEW APPLIED

IF4.4

2022-01-25

OAAI

Ho, Cheng-Han; Speck, James S.; Weisbuch, Claude; Wu, Yuh-Renn

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

APPLIED PHYSICS LETTERS

IF3.6

2021-11-29

OAAI

Chow, Y. C.; Lynsky, C.; Wu, F.; Nakamura, S.; DenBaars, S. P.; Weisbuch, C.; Speck, J. S.

Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in (In,Ga)N and (Al,Ga)N Single Quantum Wells

PHYSICAL REVIEW APPLIED

IF4.4

2021-08-27

OAAI

Shen, Huan-Ting; Weisbuch, Claude; Speck, James S.; Wu, Yuh-Renn

Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs

APPLIED PHYSICS LETTERS

IF3.6

2021-08-04

PREAI

Ho, Wan Ying; Chow, Yi Chao; Myers, Daniel J.; Wu, Feng; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

High efficiency blue InGaN microcavity light-emitting diode with a 205nm ultra-short cavity

APPLIED PHYSICS LETTERS

IF3.6

2021-01-21

OAAI

Back, Joonho; Wong, Matthew S.; DenBaars, Steven P.; Weisbuch, Claude; Nakamura, Shuji

Disorder effects in nitride semiconductors: impact on fundamental and device properties

NANOPHOTONICS

IF6.6

2020-11-18

OAAI

Weisbuch, Claude; Nakamura, Shuji; Wu, Yuh-Renn; Speck, James S.

Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane (In,Ga)N Quantum Wells

PHYSICAL REVIEW APPLIED

IF4.4

2020-11-18

OAAI

Aleksiejunas, Ramunas; Nomeika, Kazimieras; Kravcov, Oleg; Nargelas, Saulius; Kuritzky, Leah; Lynsky, Cheyenne; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

研究方向