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Cor Claeys

interuniversity microelectronics centre

37H指数
1.1K论文数
8.0K被引数
收录论文 41
发表时间
Protrusion formation at the edges of ion implanted regions
err2019-12-06
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PREAI
errRotondaro, ALP; Bender, H; Heyns, MM; Claeys, C
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Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
err2019-12-06
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PREAI
errRotondaro, ALP; Hurd, TQ; Kaniava, A; Vanhellemont, J; Simoen, E; Heyns, MM; Claeys, C
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Processes in ultrathin buried bride synthesis stimulated by low dose ion implantation
err2019-12-06
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PREAI
errLitovchenko, VG; Efremov, AA; Romanyuk, BN; Mel'nik, VP; Claeys, C
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Special Focus on Advanced Microelectronics Technology
err2016-07-20
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errOAAI
errHuang, Ru; Iwai, Hiroshi; Claeys, Cor; Deleonibus, Simon; Wang, Runsheng
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Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films
err2015-02-19
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PREAI
errZhao, Larry; Barbarin, Yohan; Croes, Kristof; Baklanov, Mikhail R.; Verdonck, Patrick; Tokei, Zsolt; Claeys, Cor
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Challenges and opportunities in advanced Ge pMOSFETs
err2012-12-01
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PREAI
errSimoen, E.; Mitard, J.; Hellings, G.; Eneman, G.; De Jaeger, B.; Witters, L.; Vincent, B.; Loo, R.; Delabie, A.; Sioncke, S.; Caymax, M.; Claeys, C.
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Uniaxial and/or Biaxial Strain Influence on MuGFET Devices
err2012-01-01
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PREAI
errAgopian, P. G. D.; Martino, J. A.; Simoen, E.; Claeys, C.
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Study of ohmic contacts to n-type Ge: Snowplow and laser activation
err2011-12-13
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PREAI
errFirrincieli, A.; Martens, K.; Rooyackers, R.; Vincent, B.; Rosseel, E.; Simoen, E.; Geypen, J.; Bender, H.; Claeys, C.; Kittl, J. A.
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Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials
err2011-12-01
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errOAAI
errZhao, Larry; Pantouvaki, Marianna; Croes, Kristof; Tokei, Zsolt; Barbarin, Yohan; Wilson, Christopher J.; Baklanov, Mikhail R.; Beyer, Gerald P.; Claeys, Cor
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Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper
err2011-01-17
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PREAI
errZhao, Larry; Tokei, Zsolt; Croes, Kristof; Wilson, Christopher J.; Baklanov, Mikhail; Beyer, Gerald P.; Claeys, Cor
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Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals
err2011-01-01
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PREAI
errSarikov, Andrey; Litovchenko, Vladimir; Lisovskyy, Igor; Voitovich, Maria; Zlobin, Sergei; Kladko, Vasyl; Slobodyan, Nikolay; Machulin, Vladimir; Claeys, Cor
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FISH SOI MOSFET: Modeling, Characterization and Its Application to Improve the Performance of Analog ICs
err2011-01-01
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PREAI
errGimenez, Salvador Pinillos; Alati, Daniel Manha; Simoen, Eddy; Claeys, Cor
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Extended-Defect Aspects of Ge-on-Si Materials and Devices
err2010-01-01
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errOAAI
errSimoen, E.; Eneman, G.; Wang, G.; Souriau, L.; Loo, R.; Caymax, M.; Claeys, C.
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Radiation damage of Ge-on-Si devices
err2008-10-01
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PREAI
errOhyama, H.; Sakamoto, K.; Sukizaki, H.; Takakura, K.; Hayama, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; De Jaeger, B.; Simoen, E.; Claeys, C.
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Effects of electron and proton irradiation on embedded SiGe source/drain diodes
err2008-10-01
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PREAI
errOhyama, H.; Nagano, T.; Takakura, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa; Kuboyama, S.; Gonzalez, M. B.; Simoen, E.; Claeys, C.
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Leakage current study of Si1-xCx embedded source/drain junctions
err2008-07-01
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PREAI
errSimoen, E.; Vissouvanadin, B.; Taleb, N.; Gonzalez, M. Bargallo; Verheyen, P.; Loo, R.; Claeys, C.; Machkaoutsan, V.; Bauer, M.; Thomas, S.; Lu, J. P.; Wise, R.
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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack
err2008-04-24
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PREAI
errMaji, Debabrata; Crupi, Felice; Giusi, Gino; Pace, Calogero; Simoen, Eddy; Claeys, Cor; Rao, V. Ramgopal
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