T. Umeda - Publications, H-index & Citations

T. Umeda

University of Tsukuba

32H指数

198论文数

4.1K被引数

收录论文 46

发表时间

How does hydrogen transform into shallow donors in silicon?

PHYSICAL REVIEW B

IF3.7

2023-12-05

PREAI

Kiyoi, Akira; Umeda, Takahide

Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface

APL MATERIALS

IF4.5

2023-11-20

OAAI

Sometani, Mitsuru; Nishiya, Yusuke; Kondo, Ren; Inohana, Rei; Zeng, Hongyu; Hirai, Hirohisa; Okamoto, Dai; Matsushita, Yu-ichiro; Umeda, Takahide

Negatively charged boron vacancy center in diamond

PHYSICAL REVIEW B

IF3.7

2022-04-04

OAAI

Umeda, T.; Watanabe, K.; Hara, H.; Sumiya, H.; Onoda, S.; Uedono, A.; Chuprina, I; Siyushev, P.; Jelezko, F.; Wrachtrup, J.; Isoya, J.

Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs 4H-SiC mosfet中TV2a-type硅空位自旋缺陷的电学检测

APPLIED PHYSICS LETTERS

IF3.6

2022-02-08

PREAI

Abe, Yuta; Chaen, Akihumi; Sometani, Mitsuru; Harada, Shinsuke; Yamazaki, Yuichi; Ohshima, Takeshi; Umeda, Takahide

Determination of Defect Concentrations in 28Si Crystals Using EPR for the Realization of the Kilogram

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2021-01-01

OAAI

Mizushima, Shigeki; Kuramoto, Naoki; Umeda, Takahide

Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces

APPLIED PHYSICS LETTERS

IF3.6

2020-04-27

OAAI

Higa, E.; Sometani, M.; Hirai, H.; Yano, H.; Harada, S.; Umeda, T.

Nearly degenerate ground state of phosphorus donor in diamond 金刚石中磷供体的近简并基态

PHYSICAL REVIEW MATERIALS

IF3.4

2020-02-27

OAAI

Shinei, C.; Kato, H.; Watanabe, H.; Makino, T.; Yamasaki, S.; Koizumi, S.; Umeda, T.

Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

APPLIED PHYSICS LETTERS

IF3.6

2020-02-20

OAAI

Umeda, T.; Kobayashi, T.; Sometani, M.; Yano, H.; Matsushita, Y.; Harada, S.

Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(0001 over bar )/SiO2 interfaces with wet oxidation

APPLIED PHYSICS LETTERS

IF3.6

2019-10-10

OAAI

Umeda, T.; Kagoyama, Y.; Tomita, K.; Abe, Y.; Sometani, M.; Okamoto, M.; Harada, S.; Hatakeyama, T.

Electron Paramagnetic Resonance Study on 28Si Single Crystal for the Future Realization of the Kilogram

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2019-06-01

OAAI

Mizushima, Shigeki; Kuramoto, Naoki; Fujii, Kenichi; Umeda, Takahide

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2018-01-17

OAAI

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond

PHYSICAL REVIEW B

IF3.7

2014-08-29

OAAI

Yamamoto, T.; Onoda, S.; Ohshima, T.; Teraji, T.; Watanabe, K.; Koizumi, S.; Umeda, T.; McGuinness, L. P.; Mueller, C.; Naydenov, B.; Dolde, F.; Fedder, H.; Honert, J.; Markham, M. L.; Twitchen, D. J.; Wrachtrup, J.; Jelezko, F.; Isoya, J.

Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble

PHYSICAL REVIEW X

IF15.7

2014-06-16

129

OAAI

Grezes, C.; Julsgaard, B.; Kubo, Y.; Stern, M.; Umeda, T.; Isoya, J.; Sumiya, H.; Abe, H.; Onoda, S.; Ohshima, T.; Jacques, V.; Esteve, J.; Vion, D.; Esteve, D.; Molmer, K.; Bertet, P.

Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance

APPLIED PHYSICS LETTERS

IF3.6

2014-02-24

OAAI

Uejima, K.; Umeda, T.

A silicon carbide room-temperature single-photon source

NATURE MATERIALS

IF38.5

2013-11-17

491

PREAI

Castelletto, S.; Johnson, B. C.; Ivady, V.; Stavrias, N.; Umeda, T.; Gali, A.; Ohshima, T.

Extending spin coherence times of diamond qubits by high-temperature annealing

PHYSICAL REVIEW B

IF3.7

2013-08-23

150

OAAI

Yamamoto, T.; Umeda, T.; Watanabe, K.; Onoda, S.; Markham, M. L.; Twitchen, D. J.; Naydenov, B.; McGuinness, L. P.; Teraji, T.; Koizumi, S.; Dolde, F.; Fedder, H.; Honert, J.; Wrachtrup, J.; Ohshima, T.; Jelezko, F.; Isoya, J.

Electron spin resonance detected by a superconducting qubit

PHYSICAL REVIEW B

IF3.7

2012-08-10

OAAI

Kubo, Y.; Diniz, I.; Grezes, C.; Umeda, T.; Isoya, J.; Sumiya, H.; Yamamoto, T.; Abe, H.; Onoda, S.; Ohshima, T.; Jacques, V.; Dreau, A.; Roch, J-F.; Auffeves, A.; Vion, D.; Esteve, D.; Bertet, P.

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

APPLIED PHYSICS LETTERS

IF3.6

2011-11-04

OAAI

Kosugi, R.; Umeda, T.; Sakuma, Y.

Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

APPLIED PHYSICS LETTERS

IF3.6

2011-10-04

OAAI

Umeda, T.; Esaki, K.; Kosugi, R.; Fukuda, K.; Ohshima, T.; Morishita, N.; Isoya, J.