A. Cappy - Publications, H-index & Citations

A. Cappy

centre national de la recherche scientifique (cnrs)

37H指数

293论文数

6.2K被引数

收录论文 13

发表时间

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

FRONTIERS IN NEUROSCIENCE

IF3.2

2017-03-15

152

OAAI

Sourikopoulos, Ilias; Hedayat, Sara; Loyez, Christophe; Danneville, Francois; Hoel, Virginie; Mercier, Eric; Cappy, Alain

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

APPLIED PHYSICS LETTERS

IF3.6

2009-03-10

PREAI

Wichmann, Nicolas; Vasallo, Beatriz G.; Bollaert, Sylvain; Roelens, Yannick; Wallart, Xavier; Cappy, Alain; Gonzalez, Tomas; Pardo, Daniel; Mateos, Javier

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-06-16

PREAI

Shchepetov, A.; Gardes, C.; Roelens, Y.; Cappy, A.; Bollaert, S.; Boubanga-Tombet, S.; Teppe, F.; Coquillat, D.; Nadar, S.; Dyakonova, N.; Videlier, H.; Knap, W.; Seliuta, D.; Vadoklis, R.; Valusis, G.

Imaging and controlling electron transport inside a quantum ring

NATURE PHYSICS

IF18.4

2006-11-12

OAAI

Hackens, B.; Martins, F.; Ouisse, T.; Sellier, H.; Bollaert, S.; Wallart, X.; Cappy, A.; Chevrier, J.; Bayot, V.; Huant, S.

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-09-29

192

PREAI

El Fatimy, A.; Teppe, F.; Dyakonova, N.; Knap, W.; Seliuta, D.; Valusis, G.; Shchepetov, A.; Roelens, Y.; Bollaert, S.; Cappy, A.; Rumyantsev, S.

Nonlinear electrical properties of three-terminal junctions

APPLIED PHYSICS LETTERS

IF3.6

2006-09-01

PREAI

Wallin, D.; Shorubalko, I.; Xu, H. Q.; Cappy, A.

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

PHYSICAL REVIEW B

IF3.7

2006-05-19

PREAI

Marlow, C. A.; Taylor, R. P.; Martin, T. P.; Scannell, B. C.; Linke, H.; Fairbanks, M. S.; Hall, G. D. R.; Shorubalko, I.; Samuelson, L.; Fromhold, T. M.; Brown, C. V.; Hackens, B.; Faniel, S.; Gustin, C.; Bayot, V.; Wallart, X.; Bollaert, S.; Cappy, A.

Room-temperature terahertz emission from nanometer field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-04-04

132

PREAI

Dyakonova, N; El Fatimy, A; Lusakowski, J; Knap, W; Dyakonov, MI; Poisson, MA; Morvan, E; Bollaert, S; Shchepetov, A; Roelens, Y; Gaquiere, C; Theron, D; Cappy, A

Sign reversal and tunable rectification in a ballistic nanojunction

APPLIED PHYSICS LETTERS

IF3.6

2004-11-08

OAAI

Hackens, B; Gence, L; Gustin, C; Wallart, X; Bollaert, S; Cappy, A; Bayot, V

Terahertz emission. by plasma waves in 60 nm gate high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2004-03-29

314

PREAI