Pengcheng Tao

Dalian University of Technology

H指数:14

被引数:823

个人简介

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Nanomaterial-Enabled Fiber-Optic SPR Biosensor for Continuous and Noninvasive Body Fluid Monitoring:Progress and Prospects

纳米材料增强的光纤表面等离子体共振生物传感器在连续非侵入式体液监测中的应用：进展与展望

Nanomaterials

IF4.3

2026-07-300

Research Progress on Nanomaterials in SPR Sensors

表面等离子体共振传感器中纳米材料的研究进展

Nanomaterials 2025, Vol. 15, Page 1847

IF4.3

2025-12-090

High-resolution flexible fiber Fabry-Perot tactile sensor based on bubble microcavity

基于气泡微腔的高分辨率柔性纤维法布里-珀罗触觉传感器

sensors and actuators a physical

IF0

2025-07-160

PRE

High-speed pre-self-rotation of amine microdroplets in cyclones to enhance CO2 capture

SEPARATION AND PURIFICATION TECHNOLOGY

IF9

2025-07-010

PRE

6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

A Room-Temperature Dual-Gas Humidity/Ammonia Sensor Based on Gallium Oxide for Breath Analysis

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

APPLIED PHYSICS LETTERS

IF3.6

2024-12-040

PRE

High-Performance Fiber Optic High-Frequency Cantilever Acoustical Transducer Based on PET Film

IEEE SENSORS JOURNAL

IF4.5

2024-11-150

PRE

Improved breakdown voltage and dynamic Ron characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-11-070

PRE

All Fiber-Optic Photoacoustic Spectroscopy Sensor Combining Resonance and Nonresonance Photoacoustic Cells for High-Sensitivity Simultaneous Dual-Gas Sensing

结合共振和非共振光声池的全光纤光声光谱传感器，用于高灵敏度同时双气体传感

IEEE SENSORS JOURNAL

IF4.5

2024-10-014

PRE

Specific detection of mercury ions based on surface plasmon resonance sensor modified with 1, 6-hexanedithiol

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2023-06-016

PRE

High-sensitivity fiber-optic Fabry-Perot transverse load sensor based on bubble microcavity

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2022-03-0110

PRE

Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors

SiON/III族氮化物界面性质对GaN基功率场效应晶体管器件性能的影响

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-237

PRE

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

MICROMACHINES

IF3

2019-12-056

OAAI

Recent advances in exfoliation techniques of layered and non-layered materials for energy conversion and storage

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2019-01-0194

PREAI

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-03-0111

OAAI

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2016-05-17142

PREAI

Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-01-018

PREAI

Fabrication and characterization of single ZnO microwire Schottky light emitting diodes

单根ZnO微丝肖特基发光二极管的制备与表征

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2015-12-017

PREAI

Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2015-09-0116

PREAI

Pengcheng Tao

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