未登录

Y

Yuhua Zuo

Chinese Academy of Sciences

H指数:21

被引数:1,743

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Social jetlag and obstructive sleep apnea severity: A retrospective study based on polysomnography

社会时差与阻塞性睡眠呼吸暂停严重程度：一项基于多导睡眠图的研究

IF3.4

2025-08-050

PRE

Corrosion resistance improvement of transparent conductive oxide films to the acidic etching during the electroplating preparation of copper electrodes on silicon heterojunction solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2025-04-010

PRE

Research Progress of GeSn Photodetectors for Infrared Application

GeSn红外光电探测器的研究进展

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-010

PRE

Boron-doped amorphous buffer layer for p-type microcrystalline silicon emitter to prepare efficient silicon heterojunction solar cell

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2024-12-011

PRE

Benzalkonium chloride induces hematopoietic stem cell reduction and immunotoxicity in zebrafish larvae

苯扎氯铵诱导斑马鱼幼虫造血干细胞减少和免疫毒性

ECOTOXICOLOGY AND ENVIRONMENTAL SAFETY

IF6.1

2024-10-010

OAAI

Investigation of temperature and H2 on GePb/Ge multiple quantum well growth

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-03-211

PRE

Photoluminescence characterization of GeSn prepared by rapid melting growth method

JOURNAL OF LUMINESCENCE

IF3.6

2023-03-015

PRE

Hexafluoropropylene oxide trimer acid (HFPO-TA) disturbs embryonic liver and biliary system development in zebrafish

六氟环氧丙烷三聚体酸 (hfpo-ta) 干扰斑马鱼的胚胎肝脏和胆道系统发育

SCIENCE OF THE TOTAL ENVIRONMENT

IF8

2023-02-0119

PRE

High-performance waveguide-coupled lateral Ge/Si avalanche photodetector

IF3.3

2022-08-265

PRE

Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2022-07-128

PRE

Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

PHOTONICS RESEARCH

IF7.2

2022-06-1023

PRE

Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics

APPLIED PHYSICS LETTERS

IF3.6

2022-03-2330

PRE

Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-08-0615

PRE

30 GHz GeSn photodetector on SOI substrate for 2 μm wavelength application

PHOTONICS RESEARCH

IF7.2

2021-03-2271

PRE

Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs

JOURNAL OF LUMINESCENCE

IF3.6

2020-12-0127

PREAI

Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2020-07-016

PREAI

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

PHOTONICS RESEARCH

IF7.2

2020-05-2625

PRE

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn

SCIENTIFIC REPORTS

IF3.9

2020-04-0917

OAAI

High-power back-to-back dual-absorption germanium photodetector

IF3.3

2020-03-0424

PRE

Enhanced Efficiency of Carbon-Based Mesoscopic Perovskite Solar Cells through a Tungsten Oxide Nanoparticle Additive in the Carbon Electrode

通过碳电极中的氧化钨纳米颗粒添加剂提高碳基介观钙钛矿太阳能电池的效率

SCIENTIFIC REPORTS

IF3.9

2019-06-1958

OAAI