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Yoshinobu Aoyagi
riken
49
H指数
567
论文数
8.2K
被引数
0
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80
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被引数
Formation of two-dimensional multichannel vertical optical waveguides in a nitrogen-vacancy center diamond using a femtosecond Bessel beam laser for local quantum sensing
APPLIED PHYSICS LETTERS
IF
3.6
2025-04-21
0
OA
AI
Kurose, Noriko; Obata, Kotaro; Nomura, Shintaro; Ogawa, Takayo; Wada, Satoshi; Sugioka, Koji; Aoyagi, Yoshinobu
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Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells
ELECTRONICS AND COMMUNICATIONS IN JAPAN
IF
0.4
2016-06-14
1
PRE
AI
Kurose, Noriko; Aoyagi, Yoshinobu
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Nano-scale interface controls for future plastic transistors
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
IF
6.9
2016-01-12
7
OA
AI
Tsukagoshi, Kazuhito; Yagi, Iwao; Aoyagi, Yoshinobu
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Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
APPLIED PHYSICS LETTERS
IF
3.6
2009-03-06
100
PRE
AI
Minari, Takeo; Kano, Masataka; Miyadera, Tetsuhiko; Wang, Sui-Dong; Aoyagi, Yoshinobu; Tsukagoshi, Kazuhito
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AlN/AlGaN short-period superlattice sacrificial layers in laser lift-off for vertical-type AlGaN-based deep ultraviolet light emitting diodes
APPLIED PHYSICS LETTERS
IF
3.6
2009-02-12
34
PRE
AI
Takeuchi, Misaichi; Maegawa, Tomohiro; Shimizu, Hiroshi; Ooishi, Shin; Ohtsuka, Takumi; Aoyagi, Yoshinobu
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Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
APPLIED PHYSICS LETTERS
IF
3.6
2008-06-30
177
PRE
AI
Nanjo, Takuma; Takeuchi, Misaichi; Suita, Muneyoshi; Oishi, Toshiyuki; Abe, Yuji; Tokuda, Yasunori; Aoyagi, Yoshinobu
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Selective organization of solution-processed organic field-effect transistors
APPLIED PHYSICS LETTERS
IF
3.6
2008-04-28
74
OA
AI
Minari, Takeo; Kano, Masataka; Miyadera, Tetsuhiko; Wang, Sui-Dong; Aoyagi, Yoshinobu; Seto, Mari; Nemoto, Takashi; Isoda, Seiji; Tsukagoshi, Kazuhito
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Direct determination of photonic band structure for waveguiding modes in two-dimensional photonic crystals
OPTICS EXPRESS
IF
3.3
2008-01-01
9
OA
AI
Inoue, Shin-ichiro; Yokoyama, Shiyoshi; Aoyagi, Yoshinobu
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Molecular-packing-enhanced charge transport in organic field-effect transistors based on semiconducting porphyrin crystals
APPLIED PHYSICS LETTERS
IF
3.6
2007-09-18
45
OA
AI
Minari, Takeo; Seto, Mari; Nemoto, Takashi; Isoda, Seiji; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu
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Frequency response analysis of pentacene thin-film transistors with low impedance contact by interface molecular doping (vol 91, artn 013512, 2007)
APPLIED PHYSICS LETTERS
IF
3.6
2007-08-31
0
OA
AI
Miyadera, Tetsuhiko; Minari, Takeo; Tsukagoshi, Kazuhito; Ito, Hiromi; Aoyagi, Yoshinobu
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Charge injection process in organic field-effect transistors
APPLIED PHYSICS LETTERS
IF
3.6
2007-08-01
145
PRE
AI
Minari, Takeo; Miyadera, Tetsuhiko; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu; Ito, Hiromi
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Frequency response analysis of pentacene thin-film transistors with low impedance contact by interface molecular doping
APPLIED PHYSICS LETTERS
IF
3.6
2007-07-06
53
PRE
AI
Miyadera, Tetsuhiko; Minari, Takeo; Tsukagoshi, Kazuhito; Ito, Hiromi; Aoyagi, Yoshinobu
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Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique
APPLIED PHYSICS LETTERS
IF
3.6
2006-12-28
55
PRE
AI
Kawasaki, Koji; Koike, Choshiro; Aoyagi, Yoshinobu; Takeuchi, Misaichi
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Gate capacitance in electrochemical transistor of single-walled carbon nanotube - art. no. 073104
APPLIED PHYSICS LETTERS
IF
3.6
2006-02-14
35
PRE
AI
Shimotani, H; Kanbara, T; Iwasa, Y; Tsukagoshi, K; Aoyagi, Y; Kataura, H
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Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments
APPLIED PHYSICS LETTERS
IF
3.6
2006-02-02
22
PRE
AI
Kanbara, T; Takenobu, T; Takahashi, T; Iwasa, Y; Tsukagoshi, K; Aoyagi, Y; Kataura, H
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High-performance transparent flexible transistors using carbon nanotube films
APPLIED PHYSICS LETTERS
IF
3.6
2006-01-19
126
PRE
AI
Takenobu, T; Takahashi, T; Kanbara, T; Tsukagoshi, K; Aoyagi, Y; Iwasa, Y
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Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film -: art. no. 183502
APPLIED PHYSICS LETTERS
IF
3.6
2005-10-24
40
PRE
AI
Tsukagoshi, K; Yagi, I; Shigeto, K; Yanagisawa, K; Tanabe, J; Aoyagi, Y
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Modification of the electric conduction at the pentacene/SiO2 interface by surface termination of SiO2 -: art. no. 103502
APPLIED PHYSICS LETTERS
IF
3.6
2005-02-28
134
PRE
AI
Yagi, I; Tsukagoshi, K; Aoyagi, Y
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Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes
APPLIED PHYSICS LETTERS
IF
3.6
2004-12-27
9
PRE
AI
Kanbara, T; Iwasa, T; Tsukagoshi, K; Aoyagi, Y; Iwasa, Y
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Pentacene nanotransistor with carbon nanotube electrodes
APPLIED PHYSICS LETTERS
IF
3.6
2004-08-09
50
PRE
AI
Tsukagoshi, K; Yagi, I; Aoyagi, Y
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