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F

Frédéric Saigné

Institut d'Electronique et des Systemes

28H指数
368论文数
2.9K被引数
收录论文 16
发表时间
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Kosmiko: from CMOS imaging sensors to pixel-calibrated particle instrumentsKosmiko：从CMOS成像传感器到像素校准的粒子仪器
errExperimental Astronomy
IF2.2
err2026-09-23
err0
PREAI
errFrédéric Wrobel; Juliette Wrobel; Tadec Maraine; Jérôme Boch; Clément Risso; Luigi Dilillo; Frédéric Saigné
err分享
err收藏
Very Low to Very High Dose Rate Irradiation Response of a Single-Mode Optical Fiber at Telecom Wavelengths
errIEEE Transactions on Nuclear Science
IF1.9
err2026-04-01
err0
PREAI
errRoche, M.; Boiron, H.; Maraine, T.; Marin, E.; Meyer, A.; Fricano, F.; El Gaabouri, Y.; Lambert, D.; Paillet, P.; Boch, J.; Saigne, F.; Morana, A.; Ouerdane, Y.; Boukenter, A.; Girard, S.
err分享
err收藏
Analysis of High-Energy Heavy-Ion SEE Results Through Standard-Energy Ion SEE Data通过标准能量离子单粒子效应数据对高能重离子单粒子效应结果的分析
errIEEE Transactions on Nuclear Science
IF1.9
err2026-04-01
err0
PREAI
errSacristan Barbero, Mario; Slipukhin, Ivan; Soderstrom, Daniel; Emriskova, Natalia; Waets, Andreas; Bilko, Kacper; Prelipcean, Daniel; Coronetti, Andrea; Kettunen, Heikki; Sivertz, Michael; Saigne, Frederic; Pouget, Vincent; Alia, Ruben Garcia
err分享
err收藏
An In-Depth Study on Device Variability in 22 nm FD-SOI NMOSFETs Under X-Ray Exposure关于X射线照射下22 nm FD-SOI NMOSFET器件变异性的深入研究
errIEEE Transactions on Nuclear Science
IF1.9
err2026-02-01
err1
PREAI
errZhao, Jinghao; Qing, Yihong; Li, Zheyi; Gorbunov, Maxim; Ma, Qichao; Fan, Xue; Xu, Pengfei; Marien, Levi; Maraine, Tadec; Saigne, Frederic; Prinzie, Jeffrey; Leroux, Paul
err分享
err收藏
SEU Cross-Section Estimation Using ECORCE TCAD Tool使用ECORCE TCAD工具进行SEU截面估计
errelectronics
IF0
err2025-08-17
err0
errOAAI
errCleiton M. Marques; Alain Michez; Ygor Q. Aguiar; Frédéric Saigné
err分享
err收藏
Characterization and Radiation Testing of an Embedded, Distributed Fiber Dosimetry System for Space Applications嵌入式分布式光纤剂量测量系统在空间应用中的表征与辐射测试
errJournal of Lightwave Technology
IF4.8
err2025-08-15
err0
PREAI
errArnaud Meyer; Adriana Morana; Martin Roche; Nourdine Kerboub; Julien Mekki; Gilles Mélin; Thierry Robin; André Champavère; Frédéric Saigné; Jérôme Boch; Tadec Maraine; Cornelia Hoehr; Camille Bélanger-Champagne; Aziz Boukenter; Sylvain Girard
err分享
err收藏
Testing and Validation Methodology for a Radiation Monitoring System for Electronics in Particle Accelerators
errIEEE TRANSACTIONS ON NUCLEAR SCIENCE
IF1.9
err2022-07-01
err6
errOAAI
errZimmaro, Alessandro; Ferraro, Rudy; Boch, Jerome; Saigne, Frederic; Alia, Ruben Garcia; Brucoli, Matteo; Masi, Alessandro; Danzeca, Salvatore
err分享
err收藏
MC-ORACLE: A tool for predicting Soft Error RateMc-oracle: 一种预测软错误率的工具
errCOMPUTER PHYSICS COMMUNICATIONS
IF3.4
err2011-02-01
err43
PREAI
errWrobel, Frederic; Saigne, Frederic
err分享
err收藏
Natural radioactivity consideration for high-κ dielectrics and metal gates choice in nanoelectronic devices
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2010-06-21
err5
errOAAI
errGedion, Michael; Wrobel, Frederic; Saigne, Frederic
err分享
err收藏
Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-08-15
err17
PREAI
errWrobel, F.; Gasiot, J.; Saigne, F.; Touboul, A. D.
err分享
err收藏
Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-02-16
err21
PREAI
errCarvalho, A. M. J. F.; Marinoni, M.; Touboul, A. D.; Guasch, C.; Lebius, H.; Ramonda, M.; Bonnet, J.; Saigne, F.
err分享
err收藏
Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-08-21
err2
errOAAI
errRavotti, F.; Glaser, M.; Saigne, F.; Dusseau, L.; Sarrabayrouse, G.
err分享
err收藏
Temperature effect on geminate recombination
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-07-26
err28
PREAI
errBoch, J.; Saigne, F.; Dusseau, L.; Schrimpf, R. D.
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err收藏
Dose rate effects in bipolar oxides: Competition between trap filling and recombination
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-08
err52
PREAI
errBoch, J.; Saigne, F.; Touboul, A. D.; Ducret, S.; Carlotti, J. -F.; Bernard, M.; Schrimpf, R. D.; Wrobel, F.; Sarrabayrouse, G.
err分享
err收藏
Growth of heavy ion-induced nanodots at the SiO2-Si interface:: Correlation with ultrathin gate oxide reliability
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2005-12-01
err19
PREAI
errTouboul, AD; Carlotti, JF; Marinoni, M; Caussanel, M; Ramonda, M; Guasch, C; Bruguier, G; Bonnet, J; Saigné, F; Gasiot, J
err分享
err收藏
Effect of boron neutralization on interface state creation after direct tunneling injections at 100°C in 2,3-nm ultrathin gate oxides
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-08-04
err2
PREAI
errZander, D; Boch, J; Saigné, F; Meinertzhagen, A; Simonetti, O
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
C
C. Bélanger-Champagne
H 指数: 132 · 论文数: 1.2K
R
Ronald D. Schrimpf
H 指数: 79 · 论文数: 949
S
Sylvain Girard
H 指数: 44 · 论文数: 631
A
A. Boukenter
H 指数: 38 · 论文数: 577
H
H. Lebius
H 指数: 31 · 论文数: 156
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