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M. Bernard

communaute universite grenoble alpes

26H指数
174论文数
2.5K被引数
收录论文 25
发表时间
Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films溅射-AlN/二维MoS2籽晶层的 thermochemical treatment:一种制备高度c轴取向AlN薄膜的新 elaboration process
err2025-04-03
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errPatouillard, J.; Gassilloud, R.; Mercier, F.; Dussaigne, A.; Hyot, B.; Bernard, M.; Cadot, S.; Gauthier, N.; Vaxelaire, N.; Bernier, N.; Martin, F.; Raynaud, C.; Gianesello, F.; Mantoux, A.; Blanquet, E.
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Exciton Fine Structure of CsPbCl3 Nanocrystals: An Interplay of Electron-Hole Exchange Interaction, Crystal Structure, Shape Anisotropy, and Dielectric Mismatch
err2023-06-27
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PREAI
errGuilloux, Victor; Ghribi, Amal; Majrab, Silbeï; Margaillan, Florent; Bernard, Mathieu; Bernardot, Freïdeïrick; Legrand, Laurent; Lhuillier, Emmanuel; Boujdaria, Kais; Chamarro, Maria; Testelin, Christophe; Barisien, Thierry
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Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers
err2023-01-01
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errChahine, Rebecca; Tomelleri, Martina; Paterson, Jessy; Bernard, Mathieu; Bernier, Nicolas; Pierre, Francois; Rouchon, Denis; Jannaud, Audrey; Mocuta, Cristian; Giordano, Valentina M.; Hippert, Francoise; Noe, Pierre
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An experimental study of Ge diffusion through Ge2Sb2Te5
err2022-12-01
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errLuong, Minh Anh; Ran, Sijia; Bernard, Mathieu; Claverie, Alain
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Unveiling the spin-singlet states of two electron-hole pair complexes using two-photon excitation in a GaAs/AlAs quantum dot
err2022-06-23
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errGermanis, S.; Atkinson, P.; Bach, A.; Hostein, R.; Braive, R.; Vabre, M.; Margaillan, F.; Bernard, M.; Voliotis, V.; Eble, B.
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The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature
err2022-03-01
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errPrazakova, L.; Nolot, E.; Martinez, E.; Rouchon, D.; Fillot, F.; Bernier, N.; Elizalde, R.; Bernard, M.; Navarro, G.
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Emission properties and temporal coherence of the dark exciton confined in a GaAs/AlxGa1-xAs quantum dot
err2021-09-16
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errGermanis, S.; Atkinson, P.; Hostein, R.; Majrab, S.; Margaillan, F.; Bernard, M.; Voliotis, V.; Eble, B.
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In Memory Energy Application for Resistive Random Access Memory
err2021-08-19
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errTrotti, Paola; Oukassi, Sami; Molas, Gabriel; Bernard, Mathieu; Aussenac, Francois; Pillonnet, Gael
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Microscopic lattice for two-dimensional dipolar excitons
err2020-12-29
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errLagoin, Camille; Suffit, Stephan; Bernard, Mathieu; Vabre, Maxime; West, Kenneth; Baldwin, Kirk; Pfeiffer, Loren; Dubin, Francois
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Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling
err2020-06-26
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errTholapi, Rajkiran; Gallard, Manon; Burle, Nelly; Guichet, Christophe; Escoubas, Stephanie; Putero, Magali; Mocuta, Cristian; Richard, Marie-Ingrid; Chahine, Rebecca; Sabbione, Chiara; Bernard, Mathieu; Fellouh, Leila; Noe, Pierre; Thomas, Olivier
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New insights into thermomechanical behavior of GeTe thin films during crystallization
err2020-06-01
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errGallard, Marion; Amara, Mohamed Salah; Putero, Magali; Burle, Nelly; Guichet, Christophe; Escoubas, Stephanie; Richard, Marie-Ingrid; Mocuta, Cristian; Chahine, Rebbeca R.; Bernard, Mathieu; Kowalczyk, Philippe; Noe, Pierre; Thomas, Olivier
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Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors
err2020-06-01
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errNolot, E.; Pessoa, W.; Torrengo, S.; Mazel, Y.; Bernard, M.; Gergaud, P.; Menesguen, Y.; Lepy, M. C.; Eichert, D.
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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
err2020-02-28
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errNoe, Pierre; Verdy, Anthonin; d'Acapito, Francesco; Dory, Jean-Baptiste; Bernard, Mathieu; Navarro, Gabriele; Jager, Jean-Baptiste; Gaudin, Jerome; Raty, Jean-Yves
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Anisotropic shape of CsPbBr3 colloidal nanocrystals: from 1D to 2D confinement effects
err2020-01-01
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errSteinmetz, Violette; Ramade, Julien; Legrand, Laurent; Barisien, Thierry; Bernardot, Frederick; Lhuillier, Emmanuel; Bernard, Mathieu; Vabre, Maxime; Saidi, Imen; Ghribi, Amal; Boujdaria, Kais; Testelin, Christophe; Chamarro, Maria
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Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
err2018-12-18
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errMendes, M. Kazar; Martinez, E.; Ablett, J. M.; Veillerot, M.; Gassilloud, R.; Bernard, M.; Renault, O.; Rueff, J. P.; Barrett, N.
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Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments
err2018-11-01
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PREAI
errPessoa, W.; Roule, A.; Nolot, E.; Mazel, Y.; Bernard, M.; Lepy, M. -C.; Menesguen, Y.; Novikova, A.; Gergaud, P.; Brigidi, F.; Eichert, D.
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Dark-bright exciton coupling in asymmetric quantum dots
err2018-10-05
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errGermanis, Savvas; Atkinson, Paola; Hostein, Richard; Gourdon, Catherine; Voliotis, Valia; Lemaitre, Aristide; Bernard, Mathieu; Margaillan, Florent; Majrab, Silbe; Eble, Benoit
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Forming mechanism of Te-based conductive-bridge memories
err2018-02-01
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errMendes, M. Kazar; Martinez, E.; Marty, A.; Veillerot, M.; Yamashita, Y.; Gassilloud, R.; Bernard, M.; Renault, O.; Barrett, N.
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Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4H-SiC
err2016-08-05
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errZargaleh, S. A.; Eble, B.; Hameau, S.; Cantin, J-L.; Legrand, L.; Bernard, M.; Margaillan, F.; Lauret, J-S.; Roch, J-F.; von Bardeleben, H. J.; Rauls, E.; Gerstmann, U.; Treussart, F.
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