Michiharu Tabe - Publications, H-index & Citations

Michiharu Tabe

Shizuoka University

29H指数

218论文数

2.3K被引数

收录论文 29

发表时间

Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes

APPLIED PHYSICS LETTERS

IF3.6

2019-06-18

PREAI

Prabhudesai, Gaurang; Muruganathan, Manoharan; Le The Anh; Mizuta, Hiroshi; Hori, Masahiro; Ono, Yukinori; Tabe, Michiharu; Moraru, Daniel

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

APPLIED PHYSICS LETTERS

IF3.6

2017-03-02

PREAI

Samanta, Arup; Muruganathan, Manoharan; Hori, Masahiro; Ono, Yukinori; Mizuta, Hiroshi; Tabe, Michiharu; Moraru, Daniel

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

APPLIED PHYSICS LETTERS

IF3.6

2016-03-03

PREAI

Tabe, Michiharu; Hoang Nhat Tan; Mizuno, Takeshi; Muruganathan, Manoharan; Le The Anh; Mizuta, Hiroshi; Nuryadi, Ratno; Moraru, Daniel

Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors

SCIENTIFIC REPORTS

IF3.9

2015-11-30

OAAI

Samanta, Arup; Moraru, Daniel; Mizuno, Takeshi; Tabe, Michiharu

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

NANOSCALE RESEARCH LETTERS

IF4.1

2015-09-24

OAAI

Moraru, Daniel; Samanta, Arup; Tyszka, Krzysztof; Le The Anh; Muruganathan, Manoharan; Mizuno, Takeshi; Jablonski, Ryszard; Mizuta, Hiroshi; Tabe, Michiharu

Transport spectroscopy of coupled donors in silicon nano-transistors

SCIENTIFIC REPORTS

IF3.9

2014-08-28

OAAI

Moraru, Daniel; Samanta, Arup; Le The Anh; Mizuno, Takeshi; Mizuta, Hiroshi; Tabe, Michiharu

Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures

APPLIED PHYSICS LETTERS

IF3.6

2013-12-09

PREAI

Purwiyanti, Sri; Nowak, Roland; Moraru, Daniel; Mizuno, Takeshi; Hartanto, Djoko; Jablonski, Ryszard; Tabe, Michiharu

Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope

APPLIED PHYSICS LETTERS

IF3.6

2013-03-01

PREAI

Nowak, Roland; Moraru, Daniel; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu

Electron-tunneling operation of single-donor-atom transistors at elevated temperatures

PHYSICAL REVIEW B

IF3.7

2013-02-13

PREAI

Hamid, Earfan; Moraru, Daniel; Kuzuya, Youhei; Mizuno, Takeshi; Anh, Le The; Mizuta, Hiroshi; Tabe, Michiharu

Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy

APPLIED PHYSICS LETTERS

IF3.6

2011-11-21

PREAI

Anwar, Miftahul; Nowak, Roland; Moraru, Daniel; Udhiarto, Arief; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu

Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-09-13

PREAI

Udhiarto, Arief; Moraru, Daniel; Mizuno, Takeshi; Tabe, Michiharu

Atom devices based on single dopants in silicon nanostructures

NANOSCALE RESEARCH LETTERS

IF4.1

2011-07-29

OAAI

Moraru, Daniel; Udhiarto, Arief; Anwar, Miftahul; Nowak, Roland; Jablonski, Ryszard; Hamid, Earfan; Tarido, Juli Cha; Mizuno, Takeshi; Tabe, Michiharu

Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2010-12-28

OAAI

Hamid, Earfan; Moraru, Daniel; Tarido, Juli Cha; Miki, Sakito; Mizuno, Takeshi; Tabe, Michiharu

Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope

APPLIED PHYSICS LETTERS

IF3.6

2008-10-06

PREAI

Ligowski, Maciej; Moraru, Daniel; Anwar, Miftahul; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu