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Achieving High Substitutional Incorporation in Mn-Doped Graphene 在Mn掺杂的石墨烯中实现高取代掺入 Villarreal, Renan; Zarkua, Zviadi; Kretschmer, Silvan; Hendriks, Vince; Hillen, Jonas; Tsai, Hung Chieh; Junge, Felix; Nissen, Matz; Saha, Tanusree; Achilli, Simona; Hofsa''ss, Hans C.; Martins, Michael; De Ninno, Giovanni; Lacovig, Paolo; Lizzit, Silvano; Di Santo, Giovanni; Petaccia, Luca; De Feyter, Steven; De Gendt, Stefan; Brems, Steven; van de Vondel, Joris; Krasheninnikov, Arkady V.; Pereira, Lino M. C. 分享 收藏
Doping Graphene with Substitutional Mn (vol 15, pg 5449, 2021) 用取代的Mn掺杂石墨烯 (vol 15,pg 5449,2021) Lin, Pin-Cheng; Villarreal, Renan; Achilli, Simona; Bana, Harsh; Nair, Maya N.; Tejeda, Antonio; Verguts, Ken; De Gendt, Stefan; Auge, Manuel; Hofsass, Hans; De Feyter, Steven; Di Santo, Giovanni; Petaccia, Luca; Brems, Steven; Fratesi, Guido; Pereira, Lino M. C. 分享 收藏
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Ion Implantation of Graphene-Toward IC Compatible Technologies Bangert, U.; Pierce, W.; Kepaptsoglou, D. M.; Ramasse, Q.; Zan, R.; Gass, M. H.; Van den Berg, J. A.; Boothroyd, C. B.; Amani, J.; Hofsaess, H. 分享 收藏
p-type conduction in beryllium-implanted hexagonal boron nitride films He, B.; Zhang, W. J.; Yao, Z. Q.; Chong, Y. M.; Yang, Y.; Ye, Q.; Pan, X. J.; Zapien, J. A.; Bello, I.; Lee, S. T.; Gerhards, I.; Zutz, H.; Hofsaess, H. 分享 收藏
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Electronic structure of boron nitride single crystals and films -: art. no. 195113 MacNaughton, JB; Moewes, A; Wilks, RG; Zhou, XT; Sham, TK; Taniguchi, T; Watanabe, K; Chan, CY; Zhang, WJ; Bello, I; Lee, ST; Hofsäss, H 分享 收藏
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