J. Bruley - Publications, H-index & Citations

J. Bruley

CEA

41H指数

221论文数

5.8K被引数

收录论文 21

发表时间

High-Efficiency Continuous Spin-Conduction through NiO/Cu Bilayer Structure 高效率连续自旋传导通过NiO/Cu双层结构

NANO LETTERS

IF9.1

2025-03-04

OAAI

Sahoo, Biswajit; Safranski, Christopher; Hu, Guohan; Liang, Jim; Robbins, Michael; Hashemi, Pouya; Bruley, John; Sun, Jonathan Z.

Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy

APPLIED PHYSICS LETTERS

IF3.6

2018-06-05

PREAI

Wang, Y. Y.; Nxumalo, J.; Ioannou, D. P.; Katnani, A.; Brown, J.; Bandy, K.; Macdonald, M.; Krishnasamy, R.; Bruley, J.

Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si

APPLIED PHYSICS LETTERS

IF3.6

2015-06-08

215

PREAI

Schmid, H.; Borg, M.; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D.; Riel, H.

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

APPLIED PHYSICS LETTERS

IF3.6

2015-01-28

PREAI

Wang, Y. Y.; Cooper, D.; Rouviere, J.; Murray, C. E.; Bernier, N.; Bruley, J.

Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles

NANO LETTERS

IF9.1

2014-12-22

PREAI

Gupta, Tanya; Hannon, James B.; Tersoff, J.; Tromp, Rudolf M.; Ott, John A.; Bruley, John; Steingart, Daniel A.

Vertical III-V Nanowire Device Integration on Si(100)

NANO LETTERS

IF9.1

2014-03-19

148

PREAI

Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E.; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2014-02-27

OAAI

Ngo, Thong Q.; Posadas, Agham B.; McDaniel, Martin D.; Hu, Chengqing; Bruley, John; Yu, Edward T.; Demkov, Alexander A.; Ekerdt, John G.

Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode (vol 8, pg 748, 2013)

NATURE NANOTECHNOLOGY

IF34.9

2013-11-07

OAAI

Dubourdieu, Catherine; Bruley, John; Arruda, Thomas M.; Posadas, Agham; Jordan-Sweet, Jean; Frank, Martin M.; Cartier, Eduard; Frank, David J.; Kalinin, Sergei V.; Demkov, Alexander A.; Narayanan, Vijay

Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

NATURE NANOTECHNOLOGY

IF34.9

2013-09-29

234

PREAI

Strain mapping of Si devices with stress memorization processing

APPLIED PHYSICS LETTERS

IF3.6

2013-07-30

PREAI

Wang, Y. Y.; Bruley, J.; van Meer, H.; Li, J.; Domenicucci, A.; Murray, C. E.; Rouviere, J.

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography 使用纳米聚焦x射线布拉格投影图对外延半导体异质结构中的晶格畸变进行定量纳米级成像

NANO LETTERS

IF9.1

2012-09-26

PREAI

Hruszkewycz, S. O.; Holt, M. V.; Murray, C. E.; Bruley, J.; Holt, J.; Tripathi, A.; Shpyrko, O. G.; McNulty, I.; Highland, M. J.; Fuoss, P. H.

Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography 使用BCP辅助纳米光刻技术制备外延石墨烯纳米带阵列

ACS NANO

IF16

2012-07-31

PREAI

Liu, Guanxiong; Wu, Yanqing; Lin, Yu-Ming; Farmer, Damon B.; Ott, John A.; Bruley, John; Grill, Alfred; Avouris, Phaedon; Pfeiffer, Dirk; Balandin, Alexander A.; Dimitrakopoulos, Christos

High temperature (1000 °C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

APPLIED PHYSICS LETTERS

IF3.6

2011-06-20

PREAI

Dubourdieu, C.; Cartier, E.; Bruley, J.; Hopstaken, M.; Frank, M. M.; Narayanan, V.

Materials and electrical characterization of physical vapor deposited LaxLu1-xO3 thin films on 300 mm silicon

APPLIED PHYSICS LETTERS

IF3.6

2011-03-23

PREAI

Edge, L. F.; Vo, T.; Paruchuri, V. K.; Iijima, R.; Bruley, J.; Jordan-Sweet, J.; Linder, B. P.; Kellock, A. J.; Tsunoda, T.; Shinde, S. R.