H. Riemann - Publications, H-index & Citations

H. Riemann

russian academy of sciences

39H指数

329论文数

5.6K被引数

收录论文 55

发表时间

Terahertz transient stimulated emission from doped silicon

APL PHOTONICS

IF5.3

2020-10-01

OAAI

Pavlov, S. G.; Dessmann, N.; Pohl, A.; Zhukavin, R. Kh.; Klaassen, T. O.; Abrosimov, N. V.; Riemann, H.; Redlich, B.; van der Meer, A. F. G.; Ortega, J. -M.; Prazeres, R.; Orlova, E. E.; Muraviev, A. V.; Shastin, V. N.; Huebers, H. -W.

Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (vol 6, pg 40, 2020)

NPJ QUANTUM INFORMATION

IF8.3

2020-08-06

OAAI

Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywinski, Lukasz; Bougeard, Dominique; Schreiber, Lars R.

Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe

NPJ QUANTUM INFORMATION

IF8.3

2020-05-15

OAAI

Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywinski, Lukasz; Bougeard, Dominique; Schreiber, Lars R.

Characterization of the Si:Se+ Spin-Photon Interface

PHYSICAL REVIEW APPLIED

IF4.4

2019-04-11

OAAI

DeAbreu, Adam; Bowness, Camille; Abraham, Rohan J. S.; Medvedova, Alzbeta; Morse, Kevin J.; Riemann, Helge; Abrosimov, Nikolay, V; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.; Simmons, Stephanie

Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centers

PHYSICAL REVIEW B

IF3.7

2018-11-05

OAAI

Chartrand, C.; Bergeron, L.; Morse, K. J.; Riemann, H.; Abrosimov, N., V; Becker, P.; Pohl, H-J; Simmons, S.; Thewalt, M. L. W.

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

PHYSICAL REVIEW X

IF15.7

2018-10-05

OAAI

Pavlov, S. G.; Dessmann, N.; Redlich, B.; van der Meer, A. F. G.; Abrosimov, N. V.; Riemann, H.; Zhukavin, R. Kh.; Shastin, V. N.; Huebers, H. -W.

Short lifetime components in the relaxation of boron acceptors in silicon

PHYSICAL REVIEW B

IF3.7

2018-03-26

OAAI

Saeedi, K.; Stavrias, N.; Redlich, B.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. -J.; Thewalt, M. L. W.; Murdin, B. N.

Zero-field optical magnetic resonance study of phosphorus donors in 28-silicon

PHYSICAL REVIEW B

IF3.7

2018-03-23

OAAI

Morse, Kevin J.; Dluhy, Phillip; Huber, Julian; Salvail, Jeff Z.; Saeedi, Kamyar; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Simmons, S.; Thewalt, M. L. W.

Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi

PHYSICAL REVIEW B

IF3.7

2017-10-09

OAAI

Stavrias, N.; Saeedi, K.; Redlich, B.; Greenland, P. T.; Riemann, H.; Abrosimov, N. V.; Thewalt, M. L. W.; Pidgeon, C. R.; Murdin, B. N.

Coherent Rabi Dynamics of a Superradiant Spin Ensemble in a Microwave Cavity

PHYSICAL REVIEW X

IF15.7

2017-07-10

OAAI

Rose, B. C.; Tyryshkin, A. M.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. -J.; Thewalt, M. L. W.; Itoh, K. M.; Lyon, S. A.

A photonic platform for donor spin qubits in silicon

SCIENCE ADVANCES

IF12.5

2017-07-07

OAAI

Morse, Kevin J.; Abraham, Rohan J. S.; DeAbreu, Adam; Bowness, Camille; Richards, Timothy S.; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.; Simmons, Stephanie

Defects involving interstitial boron in low-temperature irradiated silicon

PHYSICAL REVIEW B

IF3.7

2016-12-30

PREAI

Khirunenko, L. I.; Sosnin, M. G.; Duvanskii, A. V.; Abrosimov, N. V.; Riemann, H.

Electron nuclear double resonance with donor-bound excitons in silicon

PHYSICAL REVIEW B

IF3.7

2016-12-06

OAAI

Franke, David P.; Szech, Michael; Hrubesch, Florian M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Itoh, Kohei M.; Thewalt, Michael L. W.; Brandt, Martin S.

Optically enabled magnetic resonance study of 75As and 121Sb in 28Si (vol 92, 195203, 2015)

PHYSICAL REVIEW B

IF3.7

2016-06-20

OAAI

Salvail, Jeff Z.; Dluhy, Phillip; Morse, Kevin J.; Szech, Michael; Saeedi, Kamyar; Huber, Julian; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.

Optically enabled magnetic resonance study of 75As and 121Sb in 28Si

PHYSICAL REVIEW B

IF3.7

2015-11-30

PREAI

Salvail, Jeff Z.; Dluhy, Phillip; Morse, Kevin J.; Szech, Michael; Saeedi, Kamyar; Huber, Julian; Riemann, Helge; Abromisov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.

Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

PHYSICAL REVIEW B

IF3.7

2015-10-07

OAAI

Lo Nardo, Roberto; Wolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Steger, Michael; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L.

Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

SCIENTIFIC REPORTS

IF3.9

2015-05-20

OAAI

Saeedi, K.; Szech, M.; Dluhy, P.; Salvail, J. Z.; Morse, K. J.; Riemann, H.; Abrosimov, N. V.; Noetzel, N.; Litvinenko, K. L.; Murdin, B. N.; Thewalt, M. L. W.

Hyperfine Stark effect of shallow donors in silicon

PHYSICAL REVIEW B

IF3.7

2014-11-18

OAAI

Pica, Giuseppe; Wolfowicz, Gary; Urdampilleta, Matias; Thewalt, Mike L. W.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Morton, John J. L.; Bhatt, R. N.; Lyon, S. A.; Lovett, Brendon W.

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

PHYSICAL REVIEW B

IF3.7

2014-09-22

OAAI

Sekiguchi, T.; Tyryshkin, A. M.; Tojo, S.; Abe, E.; Mori, R.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. -J.; Ager, J. W.; Haller, E. E.; Thewalt, M. L. W.; Morton, J. J. L.; Lyon, S. A.; Itoh, K. M.

Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

PHYSICAL REVIEW X

IF15.7

2014-04-10

OAAI

Pavlov, S. G.; Dessmann, N.; Shastin, V. N.; Zhukavin, R. Kh; Redlich, B.; van der Meer, A. F. G.; Mittendorff, M.; Winnerl, S.; Abrosimov, N. V.; Riemann, H.; Huebers, H. -W.

研究方向