M. Pessa - Publications, H-index & Citations

M. Pessa

Tampere University

42H指数

642论文数

8.2K被引数

收录论文 65

发表时间

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

APPLIED PHYSICS LETTERS

IF3.6

2011-06-10

OAAI

Laukkanen, P.; Punkkinen, M. P. J.; Lang, J.; Tuominen, M.; Kuzmin, M.; Tuominen, V.; Dahl, J.; Adell, J.; Sadowski, J.; Kanski, J.; Polojarvi, V.; Pakarinen, J.; Kokko, K.; Guina, M.; Pessa, M.; Vayrynen, I. J.

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

PHYSICAL REVIEW B

IF3.7

2011-05-31

PREAI

Punkkinen, M. P. J.; Laukkanen, P.; Lang, J.; Kuzmin, M.; Tuominen, M.; Tuominen, V.; Dahl, J.; Pessa, M.; Guina, M.; Kokko, K.; Sadowski, J.; Johansson, B.; Vayrynen, I. J.; Vitos, L.

Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

APPLIED PHYSICS LETTERS

IF3.6

2010-07-12

PREAI

Kudrawiec, R.; Gladysiewicz, M.; Misiewicz, J.; Korpijarvi, V-M; Pakarinen, J.; Puustinen, J.; Laukkanen, P.; Laakso, A.; Guina, M.; Dumitrescu, M.; Pessa, M.

Ab initio and scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure

PHYSICAL REVIEW B

IF3.7

2010-06-07

PREAI

Lang, J. J. K.; Punkkinen, M. P. J.; Laukkanen, P.; Kuzmin, M.; Tuominen, V.; Pessa, M.; Guina, M.; Vayrynen, I. J.; Kokko, K.; Johansson, B.; Vitos, L.

Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model

PHYSICAL REVIEW B

IF3.7

2010-01-08

OAAI

Laukkanen, P.; Punkkinen, M. P. J.; Rasanen, N.; Ahola-Tuomi, M.; Kuzmin, M.; Lang, J.; Sadowski, J.; Adell, J.; Perala, R. E.; Ropo, M.; Kokko, K.; Vitos, L.; Johansson, B.; Pessa, M.; Vayrynen, I. J.

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2009-12-31

PREAI

Kudrawiec, R.; Korpijarvi, V. -M.; Poloczek, P.; Misiewicz, J.; Laukkanen, P.; Pakarinen, J.; Dumitrescu, M.; Guina, M.; Pessa, M.

Stability and structure of rare-earth metal and Ba-induced reconstructions on a Si(100) surface

PHYSICAL REVIEW B

IF3.7

2009-12-04

PREAI

Punkkinen, M. P. J.; Kuzmin, M.; Laukkanen, P.; Perala, R. E.; Ahola-Tuomi, M.; Lang, J.; Ropo, M.; Pessa, M.; Vayrynen, I. J.; Kokko, K.; Johansson, B.; Vitos, L.

Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm

OPTICAL AND QUANTUM ELECTRONICS

IF4

2009-07-28

PREAI

Laakso, Antti; Dumitrescu, Mihail; Viheriala, Jukka; Telkkala, Jarkko; Tommila, Juha; Haring, Kimmo; Leinonen, Tomi; Ranta, Sanna; Pessa, Markus

Nanoimprint fabrication of gold nanocones with ∼10 nm tips for enhanced optical interactions

OPTICS LETTERS

IF3.3

2009-06-24

PREAI

Kontio, Juha M.; Husu, Hannu; Simonen, Janne; Huttunen, Mikko J.; Tommila, Juha; Pessa, Markus; Kauranen, Martti

Optical modeling of laterally-corrugated ridge-waveguide gratings

OPTICAL AND QUANTUM ELECTRONICS

IF4

2009-04-22

PREAI

Laakso, Antti; Dumitrescu, Mihail; Viheriala, Jukka; Karinen, Jukka; Suominen, Mikko; Pessa, Markus

An electric current spike linked to nanoscale plasticity

NATURE NANOTECHNOLOGY

IF34.9

2009-03-22

PREAI

Nowak, Roman; Chrobak, Dariusz; Nagao, Shijo; Vodnick, David; Berg, Michael; Tukiainen, Antti; Pessa, Markus

Optimization studies of single-transverse-mode 980 nm ridge-waveguide lasers 单横模980 nm脊波导激光器的优化研究

OPTICAL AND QUANTUM ELECTRONICS

IF4

2009-03-11

PREAI

Laakso, Antti; Dumitrescu, Mihail; Pietilae, Pasi; Suominen, Mikko; Pessa, Markus

Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

APPLIED PHYSICS LETTERS

IF3.6

2009-02-19

PREAI

Pakarinen, J.; Polojarvi, V.; Aho, A.; Laukkanen, P.; Peng, C. S.; Schramm, A.; Tukiainen, A.; Pessa, M.

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

APPLIED SURFACE SCIENCE

IF6.9

2008-12-01

PREAI

Pakarinen, J.; Polojarvi, V.; Laukkanen, P.; Tukiainen, A.; Laakso, A.; Peng, C. S.; Tuomisto, P.; Korpijarvi, V. -M.; Puustinen, J.; Pessa, M.

Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study

PHYSICAL REVIEW B

IF3.7

2008-11-04

PREAI

Punkkinen, M. P. J.; Laukkanen, P.; Komsa, H. -P.; Ahola-Tuomi, M.; Rasanen, N.; Kokko, K.; Kuzmin, M.; Adell, J.; Sadowski, J.; Perala, R. E.; Ropo, M.; Rantala, T. T.; Vayrynen, I. J.; Pessa, M.; Vitos, L.; Kollar, J.; Mirbt, S.; Johansson, B.

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

APPLIED PHYSICS LETTERS

IF3.6

2008-08-06

PREAI

Pakarinen, J.; Peng, C. S.; Polojarvi, V.; Tukiainen, A.; Korpijarvi, V. -M.; Puustinen, J.; Pessa, M.; Laukkanen, P.; Likonen, J.; Arola, E.

Postgrowth annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality

APPLIED PHYSICS LETTERS

IF3.6

2008-06-11

PREAI

Pakarinen, J.; Peng, C. S.; Puustinen, J.; Laukkanen, P.; Korpijarvi, V. -M.; Tukiainen, A.; Pessa, M.