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Growth of buried oxide layers of silicon-on-insulator structures by thermal oxidation of the top silicon layerJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32019-12-0610PREAI
A model of low-temperature wafer bonding and its applicationsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32019-12-0699PREAI
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Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaNPHYSICAL REVIEW BIF3.72010-03-0522PREAI
Facile synthesis of highly stable a-Si by ion implantation of low-keV H isotopesPHYSICAL REVIEW BIF3.72009-06-232PREAI
The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulatorAPPLIED PHYSICS LETTERSIF3.62009-06-1817OAAI
Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructuresAPPLIED PHYSICS LETTERSIF3.62008-09-1037PREAI
Microstructural evolution in H ion induced splitting of freestanding GaNAPPLIED PHYSICS LETTERSIF3.62008-07-2536PREAI
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Morphological instability of misfit-strained core-shell nanowiresPHYSICAL REVIEW BIF3.72008-06-0392PREAI
Nanostructured pure anatase titania tubes replicated from electrospun polymer fiber templates by atomic layer depositionCHEMISTRY OF MATERIALSIF72008-04-10127PREAI
Finite element method calculations of ZnO nanowires for nanogeneratorsAPPLIED PHYSICS LETTERSIF3.62008-03-2545OAAI
Rayleigh-instability-induced metal nanoparticle chains encapsulated in nanotubes produced by atomic layer depositionNANO LETTERSIF9.12007-12-15129PREAI
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Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transferAPPLIED PHYSICS LETTERSIF3.62007-06-0710PREAI
Direct synthesis of mesoporous carbon microwires and nanowiresCHEMISTRY OF MATERIALSIF72007-04-1180PREAI
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