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C

C. R. Abernathy

State University System of Florida

58H指数
711论文数
1.3W被引数
收录论文 91
发表时间
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Wet chemical etch solutions for AlxGa1-xP
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err11
PREAI
errLee, JW; Santana, CJ; Abernathy, CR; Pearton, SJ; Ren, F
err分享
err收藏
Wet chemical etching of AlN and InAlN in KOH solutions
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err47
PREAI
errVartuli, CB; Pearton, SJ; Lee, JW; Abernathy, CR; Mackenzie, JD; Zolper, JC; Shul, RJ; Ren, F
err分享
err收藏
Selective dry etching of III-V nitrides in Cl-2/Ar, CH4/H-2/Ar, ICI/Ar, and IBr/Ar
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err15
PREAI
errVartuli, CB; Pearton, SJ; MacKenzie, JD; Abernathy, CR; Shul, RJ
err分享
err收藏
Comparison of dry etching techniques for III-V semiconductors in CH4/H-2/Ar plasmas
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err13
PREAI
errPearton, SJ; Lee, JW; Lambers, ES; Abernathy, CR; Ren, F; Hobson, WS; Shul, RJ
err分享
err收藏
High-density etching of group III nitride ternary films
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err7
PREAI
errShul, RJ; Howard, AJ; Pearton, SJ; Abernathy, CR; Vartuli, CB
err分享
err收藏
Comparison of ICl and IBr plasma chemistries for etching of InGaAlP alloys
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-07
err2
PREAI
errHong, J; Lee, JW; Lambers, ES; Abernathy, CR; Pearton, SJ; Constantine, C; Hobson, WS
err分享
err收藏
Effect of BCl3 dry etching on InAlN surface properties
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err9
PREAI
errRen, F; Lothian, JR; Chen, YK; MacKenzie, JD; Donovan, SM; Vartuli, CB; Abernathy, CR; Lee, JW; Pearton, SJ
err分享
err收藏
Wet and dry etching of LiGaO2 and LiAlO2
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err6
PREAI
errLee, JW; Pearton, SJ; Abernathy, CR; Zavada, JM; Chai, BLH
err分享
err收藏
Cl-2-based dry etching of GaAs, AlGaAs, and GaP
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err12
PREAI
errLee, JW; Hong, J; Lambers, ES; Abernathy, CR; Pearton, SJ; Hobson, WS; Ren, F
err分享
err收藏
High ion density plasma etching of InGaP, AlInP, and AlGaP in CH4/H-2/Ar
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err15
PREAI
errLee, JW; Pearton, SJ; Santana, CJ; Mileham, JR; Lambers, ES; Abernathy, CR; Ren, F; Hobson, WS
err分享
err收藏
Inductively coupled plasma etch damage in GaAs and InP Schottky diodes
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err9
PREAI
errLee, JW; Abernathy, CR; Pearton, SJ; Ren, F; Hobson, WS; Shul, RJ; Constantine, C; Barratt, C
err分享
err收藏
Study of NH3 plasma damage on GaAs Schottky diode in inductively coupled plasma system
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err3
PREAI
errMeyer, LC; Lee, JW; Johnson, D; Huang, M; Ren, F; Anderson, TJ; LaRoche, JR; Lothian, JR; Abernathy, CR; Pearton, SJ
err分享
err收藏
Inductively coupled Ar plasma damage in AlGaAs
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err10
PREAI
errLee, JW; Hays, D; Abernathy, CR; Pearton, SJ; Hobson, WS; Constantine, C
err分享
err收藏
Inductively coupled plasma etching of III-V nitrides in CH4/H-2/Ar and CH4/H-2/N-2 chemistries
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err24
PREAI
errVartuli, CB; Pearton, SJ; Lee, JW; MacKenzie, JD; Abernathy, CR; Shul, RJ; Constantine, C; Barratt, C
err分享
err收藏
Determination of Sm2O3/GaAs heterojunction band offsets by x-ray photoelectron spectroscopy
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-04-18
err19
PREAI
errStewart, A. D.; Gerger, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
err分享
err收藏
Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-08-01
err31
PREAI
errZavada, J. M.; Nepal, N.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Davies, R.; Hite, J.; Abernathy, C. R.; Pearton, S. J.; Brown, E. E.; Hoemmerich, U.
err分享
err收藏
pH sensor using AlGaN/GaN high electron mobility transistors with Sc2O3 in the gate region
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-07-05
err73
PREAI
errKang, B. S.; Wang, H. T.; Ren, F.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.
err分享
err收藏
Studies of interface states in Sc2O3/GaN, MgO/GaN, and MgScO/GaN structures
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2007-01-01
err23
PREAI
errPolyakov, A. Y.; Smirnov, N. B.; Gila, B. P.; Hlad, M.; Gerger, A. P.; Abernathy, C. R.; Pearton, S. J.
err分享
err收藏
Optical and magnetic properties of Eu-doped GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-09-29
err72
PREAI
errHite, J.; Thaler, T.; Khanna, R.; Abernathy, C. R.; Pearton, S. J.; Park, J. H.; Steckl, A. J.; Zavada, J. M.
err分享
err收藏
Dry etching of MgCaO gate dielectric and passivation layers on GaNGaN上MgCaO栅介质和钝化层的干法刻蚀
errAPPLIED SURFACE SCIENCE
IF6.9
err2006-09-01
err8
PREAI
errHlad, M.; Voss, L.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Ren, F.
err分享
err收藏

研究方向

暂无研究方向
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