Hiroyuki Matsunami - Publications, H-index & Citations

Hiroyuki Matsunami

机构信息待补充

45H指数

384论文数

8.1K被引数

收录论文 14

发表时间

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

APPLIED PHYSICS LETTERS

IF3.6

2005-12-06

OAAI

Tomita, T; Matsuo, S; Okada, T; Kimoto, T; Matsunami, H; Mitani, T; Nakashima, SI

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

IF7

2003-11-01

PREAI

Okada, T; Kimoto, T; Yamai, K; Matsunami, H; Inoko, F

Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN

APPLIED PHYSICS LETTERS

IF3.6

2002-12-30

OAAI

Suda, J; Miura, K; Honaga, M; Nishi, Y; Onojima, N; Matsunami, H

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)

APPLIED PHYSICS LETTERS

IF3.6

2002-12-16

PREAI

Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H

Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces

APPLIED PHYSICS LETTERS

IF3.6

2002-07-08

PREAI

Yano, H; Kimoto, T; Matsunami, H

Anisotropy in breakdown field of 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2002-05-06

OAAI

Nakamura, S; Kumagai, H; Kimoto, T; Matsunami, H

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

APPLIED PHYSICS LETTERS

IF3.6

2002-01-07

OAAI

Onojima, N; Suda, J; Matsunami, H

Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2001-10-22

142

OAAI

Kimoto, T; Nakazawa, S; Hashimoto, K; Matsunami, H

A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face

APPLIED PHYSICS LETTERS

IF3.6

2001-01-15

100

PREAI

Yano, H; Hirao, T; Kimoto, T; Matsunami, H

Effects of grain boundaries in polycrystalline silicon thin-film solar cells based on the two-dimensional model

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2001-01-01

PREAI

Kurobe, K; Ishikawa, Y; Yamamoto, Y; Fuyuki, T; Matsunami, H

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

APPLIED PHYSICS LETTERS

IF3.6

2000-06-05

110

OAAI

Nakamura, S; Kimoto, T; Matsunami, H; Tanaka, S; Teraguchi, N; Suzuki, A

Effect of the optical gap on the temperature dependence of a-SiGe solar cell stability

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1998-05-01

PREAI

Terakawa, A; Shima, M; Isomura, M; Tanaka, M; Kiyama, S; Tsuda, S; Matsunami, H

Step-controlled epitaxial growth of SiC: high quality homoepitaxy SiC的分步控制外延生长: 高质量同质外延

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

1997-08-01

604

PREAI

Matsunami, H; Kimoto, T

Single crystal growth of SiC and electronic devices

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

IF8.9

1997-06-01

PREAI

Itoh, A; Matsunami, H

研究方向