B.A. Joyce - Publications, H-index & Citations

B.A. Joyce

Imperial College London

40H指数

261论文数

5.8K被引数

收录论文 15

发表时间

Learning better together? A scoping review of in-person interprofessional undergraduate simulation 合作学习更有效？一项关于面对面跨专业本科模拟教学的范围综述

ADVANCES IN SIMULATION

IF4.7

2025-04-29

OAAI

Joyce, B; Carr, D; Smart, A; Armour, D; Gormley, GJ

The mixing sensitivity of toluene and ethylbenzene sulfonation using fuming sulfuric acid studied in a rotor-stator spinning disc reactor

CHEMICAL ENGINEERING AND PROCESSING-PROCESS INTENSIFICATION

IF3.9

2021-03-01

OAAI

van Kouwen, E. R.; Winkenwerder, W.; Brentzel, Z.; Joyce, B.; Pagano, T.; Jovic, S.; Bargeman, G.; van der Schaaf, J.

Unusual nanostructures of lattice matched InP on AlInAs

APPLIED PHYSICS LETTERS

IF3.6

2014-04-10

OAAI

Gocalinska, A.; Manganaro, M.; Juska, G.; Dimastrodonato, V.; Thomas, K.; Joyce, B. A.; Zhang, J.; Vvedensky, D. D.; Pelucchi, E.

Influence of atomic hydrogen on step stability during homoepitaxial growth on vicinal GaAs surfaces

APPLIED PHYSICS LETTERS

IF3.6

2006-02-06

PREAI

Tejedor, P; Crespillo, ML; Joyce, BA

Self-organized growth on GaAs surfaces

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

2004-12-01

140

PREAI

Joyce, BA; Vvedensky, DD

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

PHYSICAL REVIEW B

IF3.7

1998-12-15

343

PREAI

Joyce, PB; Krzyzewski, TJ; Bell, GR; Joyce, BA; Jones, TS

Scanning transmission-electron microscopy study of InAs/GaAs quantum dots

PHYSICAL REVIEW B

IF3.7

1998-10-15

121

PREAI

Siverns, PD; Malik, S; McPherson, G; Childs, D; Roberts, C; Murray, R; Joyce, BA

Thickness-dependent electron accumulation in InAs thin films on GaAs(111)A: A scanning-tunneling-spectroscopy study

PHYSICAL REVIEW B

IF3.7

1998-08-15

PREAI

Yamaguchi, H; Sudijono, JL; Joyce, BA; Jones, TS; Gatzke, C; Stradling, RA

Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films

APPLIED SURFACE SCIENCE

IF6.9

1998-06-01

PREAI

Joyce, BA; Vvedensky, DD; Avery, AR; Belk, JG; Dobbs, HT; Jones, TS

Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

APPLIED PHYSICS LETTERS

IF3.6

1997-12-01

PREAI

Tok, ES; Jones, TS; Neave, JH; Zhang, J; Joyce, BA

Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy

PHYSICAL REVIEW B

IF3.7

1997-10-15

PREAI

Belk, JG; Pashley, DW; McConville, CF; Sudijono, JL; Joyce, BA; Jones, TS

Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy

APPLIED SURFACE SCIENCE

IF6.9

1997-03-01

PREAI

Yamaguchi, H; Belk, JG; Zhang, XM; Sudijono, JL; Fahy, MR; Jones, TS; Joyce, BA

Fabrication of SiGe quantum devices by electron-beam induced damage 电子束诱导损伤制备SiGe量子器件

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

1997-01-01

PREAI

Ryan, JM; Broers, AN; Paul, DJ; Pepper, M; Whall, TE; Fernandez, JM; Joyce, BA

Inhibitions of three dimensional island formation in InAs films grown on GaAs(111)A surface by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1996-08-05

113

PREAI

Yamaguchi, H; Fahy, MR; Joyce, BA

Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy

PHYSICAL REVIEW B

IF3.7

1996-04-15

PREAI

Zhang, J; Taylor, AG; Lees, AK; Fernandez, JM; Joyce, BA; Raisbeck, D; Shukla, N; Pemble, ME

研究方向