未登录Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer通过氧化铝界面层的原子层沉积在N极性上具有欧姆接触的垂直GaN肖特基势垒二极管
Yang, Yongkai; Ma, Zhengweng; Jiang, Zhongwei; Li, Bo; Gao, Linfei; Li, Shuai; Lin, Qiubao; Liu, Hezhou; Xu, Wangying; Chen, Gaopan; Zhang, Chunfu; Liu, Zhihong; Chiu, Hsien-Chin; Kuo, Hao-Chung; Ao, Jin-Ping; Liu, Xinke .png)
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收藏Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors用于GaN高电子迁移率晶体管的Ti3C2Tx MXene范德华栅极触点Wang, Chuanju; Xu, Xiangming; Tyagi, Shubham; Rout, Paresh C.; Schwingenschlogl, Udo; Sarkar, Biplab; Khandelwal, Vishal; Liu, Xinke; Gao, Linfei; Hedhili, Mohamed Nejib; Alshareef, Husam N.; Li, Xiaohang 分享 收藏 分享 收藏 分享 收藏 分享 收藏 分享 收藏 
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