Shibing Long - Publications, H-index & Citations

龙

龙世兵 (Shibing Long)

chinese academy of sciences

47H指数

156论文数

8.1K被引数

收录论文 35

发表时间

Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2018-05-08

PREAI

Liu, Qi; Zhang, XuMeng; Luo, Qing; Zhao, XiaoLong; Lv, HangBing; Long, ShiBing; Liu, Ming

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects 利用具有受控缺陷的石墨烯打破基于阳离子的电阻开关器件中的电流保持困境

ADVANCED MATERIALS

IF26.8

2018-02-13

480

PREAI

Zhao, Xiaolong; Ma, Jun; Xiao, Xiangheng; Liu, Qi; Shao, Lin; Chen, Di; Liu, Sen; Niu, Jiebin; Zhang, Xumeng; Wang, Yan; Cao, Rongrong; Wang, Wei; Di, Zengfeng; Lv, Hangbing; Long, Shibing; Liu, Ming

Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

ACS OMEGA

IF4.3

2017-10-18

OAAI

Banerjee, Writam; Xu, Xiaoxin; Lv, Hangbing; Liu, Qi; Long, Shibing; Liu, Ming

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

SCIENTIFIC REPORTS

IF3.9

2017-09-11

OAAI

Li, Yu; Zhang, Meiyun; Long, Shibing; Teng, Jiao; Liu, Qi; Lv, Hangbing; Miranda, Enrique; Sune, Jordi; Liu, Ming

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

NANO RESEARCH

IF9

2017-05-06

PREAI

Luo, Qing; Xu, Xiaoxin; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Li, Ling; Liu, Ming

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials 通过调制纳米级导电丝改善电阻开关性能，涉及二维层状材料的应用

SMALL

IF12.1

2017-04-18

175

OAAI

Li, Yu; Long, Shibing; Liu, Qi; Lv, Hangbing; Liu, Ming

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory Co/HfO2/Pt阻变存储器中纳米导电细丝的各向异性磁电阻

NANOSCALE RESEARCH LETTERS

IF4.1

2017-03-22

OAAI

Li, Leilei; Liu, Yang; Teng, Jiao; Long, Shibing; Guo, Qixun; Zhang, Meiyun; Wu, Yu; Yu, Guanghua; Liu, Qi; Lv, Hangbing; Liu, Ming

A cell-based clustering model for the reset statistics in RRAM

APPLIED PHYSICS LETTERS

IF3.6

2017-03-21

PREAI

Sun, Hao; Zhang, Meiyun; Li, Yu; Long, Shibing; Liu, Qi; Lv, Hangbing; Sune, Jordi; Liu, Ming

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer 通过纳米孔石墨烯层限制阳离子注入以增强CBRAM性能

SMALL

IF12.1

2017-02-24

122

OAAI

Zhao, Xiaolong; Liu, Sen; Niu, Jiebin; Liao, Lei; Liu, Qi; Xiao, Xiangheng; Lv, Hangbing; Long, Shibing; Banerjee, Writam; Li, Wenqing; Si, Shuyao; Liu, Ming

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

NANOSCALE

IF5.1

2017-01-01

101

PREAI

Banerjee, Writam; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

NANOSCALE

IF5.1

2017-01-01

PREAI

Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

NANOSCALE

IF5.1

2017-01-01

PREAI

Banerjee, Writam; Cai, Wu Fa; Zhao, Xiaolong; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory 通过抑制基于阳离子的存储器中的纳米丝过度生长来消除负集行为

ADVANCED MATERIALS

IF26.8

2016-10-17

219

PREAI

Liu, Sen; Lu, Nianduan; Zhao, Xiaolong; Xu, Hui; Banerjee, Writam; Lv, Hangbing; Long, Shibing; Li, Qingjiang; Liu, Qi; Liu, Ming

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

NANOSCALE RESEARCH LETTERS

IF4.1

2016-05-25

OAAI

Zhang, Meiyun; Long, Shibing; Li, Yang; Liu, Qi; Lv, Hangbing; Miranda, Enrique; Sune, Jordi; Liu, Ming

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

NANOSCALE

IF5.1

2016-01-01

PREAI

Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Liu, Ming

Conductance Quantization in Resistive Random Access Memory 电阻式随机存取存储器中的电导量化

NANOSCALE RESEARCH LETTERS

IF4.1

2015-10-26

OAAI

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Sune, Jordi; Liu, Ming

Thermal crosstalk in 3-dimensional RRAM crossbar array

SCIENTIFIC REPORTS

IF3.9

2015-08-27

110

OAAI

Sun, Pengxiao; Lu, Nianduan; Li, Ling; Li, Yingtao; Wang, Hong; Lv, Hangbing; Liu, Qi; Long, Shibing; Liu, Su; Liu, Ming

Atomic View of Filament Growth in Electrochemical Memristive Elements

SCIENTIFIC REPORTS

IF3.9

2015-08-21

OAAI

Lv, Hangbing; Xu, Xiaoxin; Sun, Pengxiao; Liu, Hongtao; Luo, Qing; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

APPLIED PHYSICS LETTERS

IF3.6

2015-03-03

PREAI

Wang, Guoming; Long, Shibing; Yu, Zhaoan; Zhang, Meiyun; Ye, Tianchun; Li, Yang; Xu, Dinglin; Lv, Hangbing; Liu, Qi; Wang, Ming; Xu, Xiaoxin; Liu, Hongtao; Yang, Baohe; Sune, Jordi; Liu, Ming

Investigation of LRS dependence on the retention of HRS in CBRAM

NANOSCALE RESEARCH LETTERS

IF4.1

2015-02-11

OAAI

Xu, Xiaoxin; Lv, Hangbing; Liu, Hongtao; Luo, Qing; Gong, Tiancheng; Wang, Ming; Wang, Guoming; Zhang, Meiyun; Li, Yang; Liu, Qi; Long, Shibing; Liu, Ming

研究方向