Mary H. Crawford - Publications, H-index & Citations

Mary H. Crawford

united states department of energy (doe)

46H指数

359论文数

8.6K被引数

收录论文 34

发表时间

Low voltage drop tunnel junctions grown monolithically by MOCVD

APPLIED PHYSICS LETTERS

IF3.6

2021-02-02

OAAI

Jamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-01-29

OAAI

Hasan, Syed M. N.; Gunning, Brendan P.; J-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H.; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul

Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs

APPLIED PHYSICS LETTERS

IF3.6

2020-08-04

OAAI

Jamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

PHOTONICS RESEARCH

IF7.2

2019-05-22

OAAI

Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.; Leonard, Francois

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

APPLIED PHYSICS LETTERS

IF3.6

2016-10-31

PREAI

King, M. P.; Kaplar, R. J.; Dickerson, J. R.; Lee, S. R.; Allerman, A. A.; Crawford, M. H.; Fischer, A. J.; Marinella, M. J.; Flicker, J. D.; Fleming, R. M.; Kizilyalli, I. C.; Aktas, O.; Armstrong, A. M.

Ultrafast and band-selective Auger recombination in InGaN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2016-04-05

OAAI

Williams, Kristopher W.; Monahan, Nicholas R.; Koleske, Daniel D.; Crawford, Mary H.; Zhu, X. -Y.

Analysis of lasers as a solution to efficiency droop in solid-state lighting

APPLIED PHYSICS LETTERS

IF3.6

2015-10-06

OAAI

Chow, W. W.; Crawford, M. H.

Toward Smart and Ultra-efficient Solid-State Lighting

ADVANCED OPTICAL MATERIALS

IF7.2

2014-06-27

347

PREAI

Tsao, Jeffrey Y.; Crawford, Mary H.; Coltrin, Michael E.; Fischer, Arthur J.; Koleske, Daniel D.; Subramania, Ganapathi S.; Wang, G. T.; Wierer, Jonathan J.; Karlicek, Robert F., Jr.

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2014-05-02

PREAI

Coltrin, Michael E.; Armstrong, Andrew M.; Brener, Igal; Chow, Weng W.; Crawford, Mary H.; Fischer, Arthur J.; Kelley, David F.; Koleske, Daniel D.; Lauhon, Lincoln J.; Martin, James E.; Nyman, May; Schubert, E. Fred; Shea-Rohwer, Lauren E.; Subramania, Ganapathi; Tsao, Jeffrey Y.; Wang, George T.; Wierer, Jonathan J., Jr.; Wright, Jeremy B.

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

APPLIED PHYSICS LETTERS

IF3.6

2012-12-11

PREAI

Lin, Guan-Bo; Shan, Qifeng; Birkel, Andrew J.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Westlake, Karl R.; Koleske, Daniel D.

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2012-10-16

PREAI

Armstrong, A.; Henry, T. A.; Koleske, D. D.; Crawford, M. H.; Westlake, K. R.; Lee, S. R.

The influence of Al composition on point defect incorporation in AlGaN

APPLIED PHYSICS LETTERS

IF3.6

2012-01-23

PREAI

Henry, T. A.; Armstrong, A.; Allerman, A. A.; Crawford, M. H.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

OPTICS EXPRESS

IF3.3

2011-11-30

204

OAAI

Li, Qiming; Westlake, Karl R.; Crawford, Mary H.; Lee, Stephen R.; Koleske, Daniel D.; Figiel, Jeffery J.; Cross, Karen C.; Fathololoumi, Saeed; Mi, Zetian; Wang, George T.

Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency

APPLIED PHYSICS LETTERS

IF3.6

2011-04-22

PREAI

Armstrong, A.; Allerman, A. A.; Henry, T. A.; Crawford, M. H.

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms 关于GaInN/GaN发光二极管中效率与载流子浓度曲线的对称性以及与引起下垂的机制的关系

APPLIED PHYSICS LETTERS

IF3.6

2011-01-17

PREAI

Dai, Qi; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2010-09-30

217

OAAI

Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

APPLIED PHYSICS LETTERS

IF3.6

2010-09-23

PREAI

Chow, W. W.; Crawford, M. H.; Tsao, J. Y.; Kneissl, M.

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

APPLIED PHYSICS LETTERS

IF3.6

2010-03-25

PREAI

Zhu, Di; Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

APPLIED PHYSICS LETTERS

IF3.6

2009-03-17

296

PREAI

Dai, Q.; Schubert, M. F.; Kim, M. H.; Kim, J. K.; Schubert, E. F.; Koleske, D. D.; Crawford, M. H.; Lee, S. R.; Fischer, A. J.; Thaler, G.; Banas, M. A.

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2009-02-25

211

OAAI

Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.; Kim, Jong Kyu; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.

研究方向