E. R. Weber - Publications, H-index & Citations

E. R. Weber

fraunhofer gesellschaft

43H指数

320论文数

1.1W被引数

收录论文 37

发表时间

Electrical and recombination properties of copper-silicide precipitates in silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

114

PREAI

Istratov, AA; Hedemann, H; Seibt, M; Vyvenko, OF; Schroter, W; Heiser, T; Flink, C; Hieslmair, H; Weber, ER

Reflective secondary optical elements for fresnel lens based concentrator modules

PROGRESS IN PHOTOVOLTAICS

IF7.6

2011-03-03

PREAI

Jaus, J.; Bett, A. W.; Reinecke, H.; Weber, E. R.

Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells

APPLIED PHYSICS LETTERS

IF3.6

2007-03-07

PREAI

Khanal, D. R.; Buonassisi, T.; Marcus, M. A.; Istratov, A. A.; Weber, E. R.

Special issue - Proceedings of E-MRS Spring Meeting Symposium L on Characterization of high-K dielectric materials, Nice, France, 29 May-2 June 2006 - Preface

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-12-01

PREAI

Dabrowski, J.; Hurley, P. K.; Murota, J.; Weber, E. R.

Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

2005-08-23

PREAI

Xu, X; Specht, P; Armitage, R; Ho, JC; Weber, ER; Kisielowski, C

Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV

PHYSICAL REVIEW B

IF3.7

2005-05-31

PREAI

Sachdeva, R; Istratov, AA; Deenapanray, PNK; Weber, ER

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

APPLIED PHYSICS LETTERS

IF3.6

2005-04-28

OAAI

Xu, X; Armitage, R; Shinkai, S; Sasaki, K; Kisielowski, C; Weber, ER

Effects of electron concentration on the optical absorption edge of InN

APPLIED PHYSICS LETTERS

IF3.6

2004-04-12

240

OAAI

Wu, J; Walukiewicz, W; Li, SX; Armitage, R; Ho, JC; Weber, ER; Haller, EE; Lu, H; Schaff, WJ; Barcz, A; Jakiela, R

Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation 通过正电子an灭确定GaAs中Ga空位形成的吉布斯自由能

PHYSICAL REVIEW B

IF3.7

2003-06-27

PREAI

Gebauer, J; Lausmann, M; Redmann, F; Krause-Rehberg, R; Leipner, HS; Weber, ER; Ebert, P

Contributions from gallium vacancies and carbon-related defects to the yellow luminescence in GaN

APPLIED PHYSICS LETTERS

IF3.6

2003-05-19

194

PREAI

Armitage, R; Hong, W; Yang, Q; Feick, H; Gebauer, J; Weber, ER; Hautakangas, S; Saarinen, K

Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110) -: art. no. 165327

PHYSICAL REVIEW B

IF3.7

2003-04-29

PREAI

Jäger, ND; Weber, ER; Urban, K; Ebert, P

Nanoscale dopant-induced dots and potential fluctuations in GaAs

APPLIED PHYSICS LETTERS

IF3.6

2003-04-21

OAAI

Jäger, ND; Urban, K; Weber, ER; Ebert, P

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

APPLIED PHYSICS LETTERS

IF3.6

2003-03-31

OAAI

Gebauer, J; Weber, ER; Jäger, ND; Urban, K; Ebert, P

Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers -: art. no. 235302

PHYSICAL REVIEW B

IF3.7

2002-05-24

PREAI

Jäger, ND; Urban, K; Weber, ER; Ebert, P

Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?

APPLIED PHYSICS LETTERS

IF3.6

2001-12-24

PREAI

Gebauer, J; Zhao, R; Specht, P; Weber, ER; Börner, F; Redmann, F; Krause-Rehberg, R

Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights -: art. no. 045322

PHYSICAL REVIEW B

IF3.7

2001-07-02

PREAI

Gworek, CS; Phatak, P; Jonker, BT; Weber, ER; Newman, N

Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2001-05-07

PREAI

Nozaki, S; Feick, H; Weber, ER; Micovic, M; Nguyen, C

High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2001-05-03

104

PREAI

Harutyunyan, VS; Aivazyan, AP; Weber, ER; Kim, Y; Park, Y; Subramanya, SG

Catalytic growth of zinc oxide nanowires by vapor transport 氧化锌纳米线的气相传输催化生长

ADVANCED MATERIALS

IF26.8

2001-01-01

2.9K

PREAI

Huang, MH; Wu, YY; Feick, H; Tran, N; Weber, E; Yang, PD

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

PHYSICAL REVIEW B

IF3.7

2000-12-15

PREAI

Shapiro, NA; Kim, Y; Feick, H; Weber, ER; Perlin, P; Yang, JW; Akasaki, I; Amano, H

研究方向