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收藏Retention Model of TaO/HfOx and TaO/AlOx RRAM with Self-Rectifying Switch Characteristics具有自整流开关特性的TaO/HfOx和TaO/AlOx RRAM保持模型
Lin, Yu-De; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Yu-Sheng; Rahaman, Sk. Ziaur; Tsai, Kan-Hsueh; Hsu, Chien-Hua; Chen, Wei-Su; Wang, Pei-Hua; King, Ya-Chin; Lin, Chrong Jung 分享 收藏 分享 收藏 The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching MemoriesRaharnan, Sk. Ziaur; Lin, Yu-De; Lee, Heng-Yuan; Chen, Yu-Sheng; Chen, Pang-Shiu; Chen, Wei-Su; Hsu, Chien-Hua; Tsai, Kan-Hsueh; Tsai, Ming-Jinn; Wang, Pei-Hua 分享 收藏 Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteRahaman, Sheikh Ziaur; Maikap, Siddheswar; Das, Atanu; Prakash, Amit; Wu, Ya Hsuan; Lai, Chao-Sung; Tien, Ta-Chang; Chen, Wei-Su; Lee, Heng-Yuan; Chen, Frederick T.; Tsai, Ming-Jinn; Chang, Liann-Be 分享 收藏 分享 收藏 Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsBanerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren 分享 收藏 Resistance switching for RRAM applicationsChen, Frederick T.; Lee, HengYuan; Chen YuSheng; Hsu YenYa; Zhang LiJie; Chen PangShiu; Chen WeiSu; Gu PeiYi; Liu WenHsing; Wang SuMin; Tsai ChenHan; Sheu, ShyhShyuan; Tsai MingJinn; Huang Ru 分享 收藏 
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