L.F. Eastman - Publications, H-index & Citations

L.F. Eastman

University of Nebraska System

70H指数

760论文数

2.5W被引数

收录论文 35

发表时间

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

APPLIED PHYSICS LETTERS

IF3.6

2011-02-28

PREAI

Schoeche, S.; Shi, Junxia; Boosalis, A.; Kuehne, P.; Herzinger, C. M.; Woollam, J. A.; Schaff, W. J.; Eastman, L. F.; Schubert, M.; Hofmann, T.

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

PROCEEDINGS OF THE IEEE

IF25.9

2010-07-01

PREAI

Hofstetter, Daniel; Baumann, Esther; Giorgetta, Fabrizio Raphael; Theron, Ricardo; Wu, Hong; Schaff, William J.; Dawlaty, Jahan; George, Paul A.; Eastman, Lester F.; Rana, Farhan; Kandaswamy, Prem K.; Guillot, Fabien; Monroy, Eva

High performance AlGaN/GaN power switch with HfO2 insulation

APPLIED PHYSICS LETTERS

IF3.6

2009-07-28

PREAI

Shi, Junxia; Eastman, Lester F.; Xin, Xiaobin; Pophristic, Milan

Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices

APPLIED PHYSICS LETTERS

IF3.6

2006-10-09

PREAI

Wang, Z.; Reimann, K.; Woerner, M.; Elsaesser, T.; Hofstetter, D.; Baumann, E.; Giorgetta, F. R.; Wu, H.; Schaff, W. J.; Eastman, L. F.

Potential performance of indium-nitride-based devices

APPLIED PHYSICS LETTERS

IF3.6

2006-04-14

PREAI

O'Leary, SK; Foutz, BE; Shur, MS; Eastman, LF

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

APPLIED PHYSICS LETTERS

IF3.6

2005-11-21

PREAI

O'Leary, SK; Foutz, BE; Shur, MS; Eastman, LF

Intersubband photoconductivity at 1.6 μm using a strain-compensated AlN/GaN superlattice -: art. no. 191102

APPLIED PHYSICS LETTERS

IF3.6

2005-10-31

PREAI

Baumann, E; Giorgetta, FR; Hofstetter, D; Lu, H; Chen, X; Schaff, WJ; Eastman, LF; Golka, S; Schrenk, W; Strasser, G

Hot-phonon effect on power dissipation in a biased AlxGa1-xN/AlN/GaN channel -: art. no. 075324

PHYSICAL REVIEW B

IF3.7

2005-02-25

PREAI

Ramonas, M; Matulionis, A; Liberis, J; Eastman, L; Chen, X; Sun, YJ

Tunneling effects and intersubband absorption in AIN/GaN superlattices

APPLIED PHYSICS LETTERS

IF3.6

2005-01-13

PREAI

Baumann, E; Giorgetta, FR; Hofstetter, D; Wu, H; Schaff, WJ; Eastman, LF; Kirste, L

Hot-electron transport in 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2005-01-05

PREAI

Ardaravicius, L; Matulionis, A; Kiprijanovic, O; Liberis, J; Cha, HY; Eastman, LF; Spencer, MG

Electron drift velocity in AlGaN/GaN channel at high electric fields

APPLIED PHYSICS LETTERS

IF3.6

2003-11-10

112

PREAI

Ardaravicius, L; Matulionis, A; Liberis, J; Kiprijanovic, O; Ramonas, M; Eastman, LF; Shealy, JR; Vertiatchikh, A

Nonuniformities in GaN/AlN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2003-09-29

PREAI

Mkhoyan, KA; Silcox, J; Wu, H; Schaff, WJ; Eastman, LF

Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2003-08-11

PREAI

Lu, H; Schaff, WJ; Eastman, LF; Wu, J; Walukiewicz, W; Cimalla, V; Ambacher, O

Hot-phonon temperature and lifetime in a biased AlxGa1-xN/GaN channel estimated from noise analysis -: art. no. 035338

PHYSICAL REVIEW B

IF3.7

2003-07-31

127

PREAI

Matulionis, A; Liberis, J; Matulioniene, I; Ramonas, M; Eastman, LF; Shealy, JR; Tilak, V; Vertiatchikh, A

GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

APPLIED PHYSICS LETTERS

IF3.6

2003-07-21

154

PREAI

Hofstetter, D; Schad, SS; Wu, H; Schaff, WJ; Eastman, LF

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2003-07-07

285

PREAI

Steinhoff, G; Hermann, M; Schaff, WJ; Eastman, LF; Stutzmann, M; Eickhoff, M

Surface charge accumulation of InN films grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2003-03-17

309

PREAI

Lu, H; Schaff, WJ; Eastman, LF; Stutz, CE

Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2003-03-03

OAAI

Mkhoyan, KA; Silcox, J; Alldredge, ES; Ashcroft, NW; Lu, H; Schaff, WJ; Eastman, LF

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels

APPLIED PHYSICS LETTERS

IF3.6

2003-02-03

OAAI

Vitusevich, SA; Danylyuk, SV; Klein, N; Petrychuk, MV; Avksentyev, AY; Sokolov, VN; Kochelap, VA; Belyaev, AE; Tilak, V; Smart, J; Vertiatchikh, A; Eastman, LF

Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2002-12-30

OAAI

Hwang, JH; Schaff, WJ; Eastman, LF; Bradley, ST; Brillson, LJ; Look, DC; Wu, J; Walukiewicz, W; Furis, M; Cartwright, AN

研究方向