H. Morkoç - Publications, H-index & Citations

H. Morkoç

Virginia Commonwealth University

45H指数

415论文数

1.2W被引数

收录论文 50

发表时间

Surface plasmon enhanced UV emission in AlGaN/GaN quantum well

APPLIED PHYSICS LETTERS

IF3.6

2010-12-01

PREAI

Lin, J.; Mohammadizia, A.; Neogi, A.; Morkoc, H.; Ohtsu, M.

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2010-07-20

PREAI

Ni, X.; Li, X.; Lee, J.; Liu, S.; Avrutin, V.; Ozgur, U.; Morkoc, H.; Matulionis, A.; Paskova, T.; Mulholland, G.; Evans, K. R.

Challenges and Opportunities in GaN and ZnO Devices and Materials

PROCEEDINGS OF THE IEEE

IF25.9

2010-07-01

PREAI

Morkoc, Hadis; Chyi, Jen-Inn; Krost, Alois; Nanishi, Yasushi; Silversmith, Donald J.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

APPLIED PHYSICS LETTERS

IF3.6

2010-03-31

PREAI

Leach, J. H.; Zhu, C. Y.; Wu, M.; Ni, X.; Li, X.; Xie, J.; Ozgur, U.; Morkoc, H.; Liberis, J.; Sermuksnis, E.; Matulionis, A.; Paskova, T.; Preble, E.; Evans, K. R.

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

APPLIED PHYSICS LETTERS

IF3.6

2009-12-03

PREAI

Leach, J. H.; Zhu, C. Y.; Wu, M.; Ni, X.; Li, X.; Xie, J.; Ozgur, U.; Morkoc, H.; Liberis, J.; Sermuksnis, E.; Matulionis, A.; Cheng, H.; Kurdak, C.

On carrier spillover in c- and m-plane InGaN light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2009-11-20

OAAI

Lee, J.; Li, X.; Ni, X.; Ozgur, U.; Morkoc, H.; Paskova, T.; Mulholland, G.; Evans, K. R.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2009-09-22

PREAI

Li, X.; Ni, X.; Lee, J.; Wu, M.; Ozgur, U.; Morkoc, H.; Paskova, T.; Mulholland, G.; Evans, K. R.

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2009-09-14

PREAI

Ni, X.; Wu, M.; Lee, J.; Li, X.; Baski, A. A.; Ozgur, U.; Morkoc, H.

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

APPLIED PHYSICS LETTERS

IF3.6

2009-09-08

PREAI

Ni, X.; Lee, J.; Wu, M.; Li, X.; Shimada, R.; Ozgur, U.; Baski, A. A.; Morkoc, H.; Paskova, T.; Mulholland, G.; Evans, K. R.

Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates

APPLIED PHYSICS LETTERS

IF3.6

2008-08-08

PREAI

Xiao, Bo; Avrutin, Vitaliy; Liu, Huiyong; Ozgur, Umit; Morkoc, Hadis; Lu, Changzhi

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

APPLIED PHYSICS LETTERS

IF3.6

2007-12-26

OAAI

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Ozgur, U.; Morkoc, H.

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3/PbO bridge layer

APPLIED PHYSICS LETTERS

IF3.6

2007-10-31

PREAI

Xiao, Bo; Gu, Xing; Izyumskaya, Natalia; Avrutin, Vitaliy; Xie, Jinqiao; Liu, Huiyong; Morkoc, Hadis

Epitaxial lateral overgrowth of (11(2)over-bar2) semipolar GaN on (1(1)over-bar00) m-plane sapphire by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2007-05-02

104

PREAI

Ni, X.; Ozgur, U.; Baski, A. A.; Morkoc, H.; Zhou, Lin; Smith, David J.; Tran, C. A.

Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

APPLIED PHYSICS LETTERS

IF3.6

2007-01-05

PREAI

Moore, J. C.; Kasliwal, V.; Baski, A. A.; Ni, X.; Ozgur, U.; Morkoc, H.

Defect reduction in (11(2)over-bar-0) a-plane GaN by two-stage epitaxial lateral overgrowth

APPLIED PHYSICS LETTERS

IF3.6

2006-12-26

OAAI

Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A. A.; Morkoc, H.; Liliental-Weber, Z.

Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas

PHYSICAL REVIEW B

IF3.7

2006-09-20

OAAI

Kurdak, C.; Biyikli, N.; Ozgur, U.; Morkoc, H.; Litvinov, V. I.

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy - art. no. 071901

APPLIED PHYSICS LETTERS

IF3.6

2006-02-13

PREAI

He, L; Moon, YT; Xie, J; Muñoz, M; Johnstone, D; Morkoç, H

Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field effect transistors -: art. no. 013505

APPLIED PHYSICS LETTERS

IF3.6

2006-01-04

PREAI

Liu, Y; Ruden, PP; Xie, J; Morkoç, H; Son, KA

Long carrier lifetimes in GaN epitaxial layers grown using TIN porous network templates -: art. no. 232106

APPLIED PHYSICS LETTERS

IF3.6

2005-06-03

PREAI

Özgür, Ü; Fu, Y; Moon, YT; Yun, F; Morkoç, H; Everitt, HO; Park, SS; Lee, KY

Near-field optical spectroscopy and microscopy of self-assembled GaN/AlN nanostructures -: art. no. 043103

APPLIED PHYSICS LETTERS

IF3.6

2005-01-24

PREAI

Neogi, A; Gorman, BP; Morkoç, H; Kawazoe, T; Ohtsu, M

研究方向