Toshiyuki Mine - Publications, H-index & Citations

Toshiyuki Mine

hitachi limited

18H指数

156论文数

1.4K被引数

收录论文 13

发表时间

Improved readout accuracy of a silicon spin qubit via log-likelihood ratio 通过似然比方法提高硅自旋量子比特的读出精度

Japanese Journal of Applied Physics

IF1.8

2026-01-30

PREAI

Mizokuchi, R.; Wada, R.; Matsuoka, R.; Ota, S.; Yanagi, I.; Mine, T.; Tsuchiya, R.; Hisamoto, D.; Mizuno, H.; Kodera, T.

Robust spin-qubit control in a natural Si-MOS quantum dot using phase modulation

npj Quantum Information

IF8.3

2026-01-21

OAAI

Takuma Kuno; Takeru Utsugi; Andrew J. Ramsay; Normann Mertig; Noriyuki Lee; Itaru Yanagi; Toshiyuki Mine; Nobuhiro Kusuno; Raisei Mizokuchi; Takashi Nakajima; Shinichi Saito; Digh Hisamoto; Ryuta Tsuchiya; Jun Yoneda; Tetsuo Kodera; Hiroyuki Mizuno

Single-electron routing in a silicon quantum-dot array

PHYSICAL REVIEW B

IF3.7

2023-12-11

OAAI

Utsugi, Takeru; Kuno, Takuma; Lee, Noriyuki; Tsuchiya, Ryuta; Mine, Toshiyuki; Hisamoto, Digh; Saito, Shinichi; Mizuno, Hiroyuki

Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration

APPLIED PHYSICS LETTERS

IF3.6

2020-04-23

OAAI

Lee, N.; Tsuchiya, R.; Shinkai, G.; Kanno, Y.; Mine, T.; Takahama, T.; Mizokuchi, R.; Kodera, T.; Hisamoto, D.; Mizuno, H.

Analysis of subthreshold slope of fully depleted amorphous In-Ga-Zn-O thin-film transistors

APPLIED PHYSICS LETTERS

IF3.6

2015-01-06

PREAI

Kawamura, Tetsufumi; Uchiyama, Hiroyuki; Saito, Shinichi; Wakana, Hironori; Mine, Toshiyuki; Hatano, Mutsuko

Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells

APPLIED PHYSICS LETTERS

IF3.6

2012-10-09

PREAI

Watanabe, Keiji; Tsuchiya, Ryuta; Mine, Toshiyuki; Yonamoto, Yoshiki; Akamatsu, Naotoshi; Hatano, Mutsuko

Germanium fin light-emitting diode

APPLIED PHYSICS LETTERS

IF3.6

2011-12-13

OAAI

Saito, S.; Oda, K.; Takahama, T.; Tani, K.; Mine, T.

Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

APPLIED PHYSICS LETTERS

IF3.6

2011-06-28

PREAI

Saito, S.; Takahama, T.; Tani, K.; Takahashi, M.; Mine, T.; Suwa, Y.; Hisamoto, D.

Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

APPLIED PHYSICS LETTERS

IF3.6

2009-12-14

OAAI

Saito, S.; Suwa, Y.; Arimoto, H.; Sakuma, N.; Hisamoto, D.; Uchiyama, H.; Yamamoto, J.; Sakamizu, T.; Mine, T.; Kimura, S.; Sugawara, T.; Aoki, M.

Silicon light-emitting transistor for on-chip optical interconnection

APPLIED PHYSICS LETTERS

IF3.6

2006-10-16

PREAI

Saito, Shin-ichi; Hisamoto, Digh; Shimizu, Haruka; Hamamura, Hirotaka; Tsuchiya, Ryuta; Matsui, Yuichi; Mine, Toshiyuki; Arai, Tadashi; Sugii, Nobuyuki; Torii, Kazuyoshi; Kimura, Shin'ichiro; Onai, Takahiro

High-quality CVD SiO2 interfacial layer prepared by cyclic deposition with O2 plasma treatment

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI

Hamamura, Hirotaka; Matsumura, Mieko; Mine, Toshiyuki; Torii, Kazuyoshi

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2004-02-23

PREAI

Saito, S; Torii, K; Shimamoto, Y; Tsujikawa, S; Hamamura, H; Tonomura, O; Mine, T; Hisamoto, D; Onai, T; Yugami, J; Hiratani, M; Kimura, S