未登录 Scaling of dark count rate with active area in 1.06 μm photon-counting InGaAsP/InP avalanche photodiodes Dauler, E. A.; Hopman, P. I.; McIntosh, K. A.; Donnelly, J. P.; Duerr, E. K.; Magliocco, R. J.; Mahoney, L. J.; Molvar, K. M.; Napoleone, A.; Oakley, D. C.; O'Donnell, F. J. 分享 收藏
Afterpulsing in Geiger-mode avalanche photodiodes for 1.06 μm wavelength Jensen, KE; Hopman, PI; Duerr, EK; Dauler, EA; Donnelly, JP; Groves, SH; Mahoney, LJ; McIntosh, KA; Molvar, KM; Napoleone, A; Oakley, DC; Verghese, S; Vineis, CJ; Younger, RD 分享 收藏
InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm McIntosh, KA; Donnelly, JP; Oakley, DC; Napoleone, A; Calawa, SD; Mahoney, LJ; Molvar, KM; Duerr, EK; Groves, SH; Shaver, DC 分享 收藏
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GaN avalanche photodiodes grown by hydride vapor-phase epitaxy McIntosh, KA; Molnar, RJ; Mahoney, LJ; Lightfoot, A; Geis, MW; Molvar, KM; Melngailis, I; Aggarwal, RL; Goodhue, WD; Choi, SS; Spears, DL; Verghese, S 分享 收藏
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