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G

G. Lucovsky

North Carolina State University

71H指数
779论文数
2.3W被引数
收录论文 50
发表时间
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Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in amorphous-Si(H) alloys: Photovoltaic and thin film transistor devices
errSURFACE & COATINGS TECHNOLOGY
IF6.1
err2014-03-01
err0
PREAI
errLucovsky, G.; Zeller, D. J.; Cheng, C.; Zhang, Y.
err分享
err收藏
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-03-31
err6
errOAAI
errSoares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.
err分享
err收藏
Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications
errNANOSCALE RESEARCH LETTERS
IF4.1
err2010-01-06
err21
errOAAI
errLucovsky, Gerald; Phillips, James C.
err分享
err收藏
Defect states in HfO2 on deposited on Ge(111) and Ge(100) substrates
errAPPLIED SURFACE SCIENCE
IF6.9
err2009-04-01
err14
PREAI
errLucovsky, G.; Seo, H.; Long, J. P.; Chung, K. -B.; Vasic, R.; Ulrich, M.
err分享
err收藏
Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-01-29
err6
PREAI
errChung, K. B.; Lucovsky, G.; Lee, W. J.; Cho, M. -H.; Jeon, Hyeongtag
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err收藏
Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2009-01-01
err21
PREAI
errSeo, H.; Chung, K. B.; Long, J. P.; Lucovsky, G.
err分享
err收藏
Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-11-04
err17
PREAI
errChung, K. B.; Seo, H.; Long, J. P.; Lucovsky, G.
err分享
err收藏
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces:: A pathway for formation of n-MOS devices on Ge substrates
errAPPLIED SURFACE SCIENCE
IF6.9
err2008-09-01
err29
PREAI
errLucovsky, G.; Lee, S.; Long, J. P.; Seo, H.; Luening, J.
err分享
err收藏
Bond constraint theory studies of chalcogenide phase change memories
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2008-05-01
err9
PREAI
errPaesler, M. A.; Baker, D. A.; Lucovsky, G.
err分享
err收藏
Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2008-05-01
err19
PREAI
errLucovsky, Gerald; Phillips, James C.
err分享
err收藏
Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2008-05-01
err2
PREAI
errLucovsky, Gerald; Phillips, James C.
err分享
err收藏
Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2008-05-01
err0
PREAI
errLucovsky, Gerald; Kasap, Safa O.; Phillips, James C.
err分享
err收藏
Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2007-06-01
err20
PREAI
errLucovsky, G.; Baker, D. A.; Paesler, M. A.; Phillips, J. C.
err分享
err收藏
EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5
errJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
IF4.9
err2007-05-01
err21
PREAI
errPaesler, M. A.; Baker, D. A.; Lucovsky, G.; Edwards, A. E.; Taylor, P. C.
err分享
err收藏
Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2006-11-01
err0
PREAI
errLucovsky, G.; Phillips, J. C.
err分享
err收藏
Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2006-06-01
err2
PREAI
errLucovsky, G.; Phillips, J. C.
err分享
err收藏
EXAFS study of amorphous Ge2Sb2Te5
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2006-06-01
err23
PREAI
errBaker, D. A.; Paesler, M. A.; Lucovsky, G.; Taylor, P. C.
err分享
err收藏
A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys
errAPPLIED SURFACE SCIENCE
IF6.9
err2004-07-01
err10
PREAI
errLucovsky, G; Rayner, GB; Kang, D; Hinkle, CL; Hong, JG
err分享
err收藏
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
errAPPLIED SURFACE SCIENCE
IF6.9
err2004-07-01
err2
PREAI
errBae, C; Lucovsky, G
err分享
err收藏
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
errAPPLIED SURFACE SCIENCE
IF6.9
err2004-07-01
err2
PREAI
errHinkle, CL; Fulton, C; Nemanich, RJ; Lucovsky, G
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
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S
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Y
Yves J. Chabal
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