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Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van der Waals Heterostructure with High Rectification and On/Off Ratios 基于Ga2O3/MoS2范德华异质结构的光电神经形态逻辑存储器件,具有高整流和开/关比 Zhang, Yao; Liu, Wei; Liu, Kai; Wang, Runzhi; Yu, Jiaqi; Liu, Zeyu; Gao, Junjie; Liu, Yujia; Zhang, Yingli; Xu, Hua; Gan, Xuetao 分享 收藏
Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate 基于WSe2/Ta2NiSe5异质结构的多模光电逻辑门的栅极电压和偏置电压可调的交错间隙到间断间隙的过渡 Zhu, Tao; Liu, Kai; Zhang, Yao; Meng, Si; He, Mengfei; Zhang, Yingli; Yan, Minglu; Dong, Xiaoxiang; Li, Xiaobo; Jiang, Man; Xu, Hua 分享 收藏
Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition Li, Yubin; Wang, Shiyao; Hong, Jinhua; Zhang, Nannan; Wei, Xin; Zhu, Tao; Zhang, Yao; Xu, Zhuo; Liu, Kaiqiang; Jiang, Man; Xu, Hua 分享 收藏