Jinlian Lu

yancheng institute of technology

H指数:11

被引数:422

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Tunable Electronic and Magnetic Properties in CrI3/TeB Heterostructure With Enhanced Curie Temperature and Valley Polarization

ADVANCED QUANTUM TECHNOLOGIES

IF4.3

2025-12-010

PRE

Robust Ferromagnetism with High Curie Temperature in 2D Tri-Layer Ti3S2X2 (X = Se/Te) Monolayer

高居里温度的鲁棒铁磁性在二维三明治Ti3S2X2 (X = Se/Te) 单层材料中

Advanced Quantum Technologies

IF4.3

2025-09-080

PRE

Possible Transformation between Half-Metallic and Metallic States of Multiferroic MnGaSSe2 Monolayers

多铁性MnGaSSe2单层中可能存在的半金属性与金属性态之间的转变

Phys. Chem. Chem. Phys.

IF2.9

2025-08-100

PRE

Quantum anomalous Hall effect and proximity coupling effect induced valley polarization in Ti3STe4 monolayer

PHYSICAL REVIEW B

IF3.7

2025-02-121

PRE

Quantum anomalous Hall states in Li/Na-doped kagome V3X8 (X = Cl, Br) monolayers

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-02-010

PRE

Manipulating the electronic and magnetic properties by ferroelectric polarization switching in 2D NiCl2/Ga2S3 van der Waals heterostructure

APPLIED PHYSICS LETTERS

IF3.6

2025-01-140

PRE

Nonvolatile Magnonics in Bilayer Magnetic Insulators

双磁绝缘体层中的非易失性磁振子学

NANO LETTERS

IF9.1

2025-01-130

PRE

Cr3X2Y2 (X, Y = S, Se, Te) monolayers: valley-polarized quantum anomalous Hall insulators driven by electric field

Cr3X2Y2 (X, Y = S, Se, Te) 单层：由电场驱动的谷极化量子反常霍尔绝缘体

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti3S3Te2 monolayer

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

Prediction of half-valley metallic and valley semiconducting features in monolayer Ti3X3Y2 (X = S, Se; Y = S, Se, Te)

PHYSICAL REVIEW B

IF3.7

2024-12-161

PRE

Tunable Chern Number and Sizable Bandgap in Kagome-Honeycomb-Triangle Latticed Quantum Anomalous Hall Insulator

可调谐陈数和较大能带隙的 Kagome-Honeycomb-Triangle 晶格量子反常霍尔绝缘体

Advanced Quantum Technologies

IF4.3

2024-12-130

PRE

Origin of ferroelectricity and superconductivity with nontrivial electronic topology in fluorinated Nb2N

PHYSICAL REVIEW B

IF3.7

2024-09-130

PRE

M3XSe4 (M = V, Cr; X = S, Te) monolayers: Intrinsic high-temperature ferromagnetic semiconductors and half metals

APPLIED PHYSICS LETTERS

IF3.6

2024-09-031

PRE

Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature

二维Janus过渡金属硫族化合物的预测: 具有高居里温度的鲁棒铁磁半导体

MOLECULES

IF4.6

2024-08-190

OAAI

2D MnTiX2 (X = F/Cl/Br) monolayers: Robust valley-polarized quantum anomalous Hall insulators with high transition temperatures and wide bandgaps

APPLIED PHYSICS LETTERS

IF3.6

2024-07-151

PRE

Coexistence of Ferromagnetism and Ferroelectricity in Cu-Intercalated Bilayer CrI3

ACS OMEGA

IF4.3

2024-03-010

OAAI

Ti3O5 monolayer: Tunable quantum anomalous Hall insulator

PHYSICAL REVIEW B

IF3.7

2023-12-216

PRE

Designed two dimensional triangle lattice Ti3X5 (X=S, Se): Stable quantum anomalous Hall states with high Chern number

APPLIED PHYSICS LETTERS

IF3.6

2023-10-184

PRE

Chern number transition of quantum anomalous hall phases in kagome TM3Te4 (TM = Ti, Cr) monolayers by manipulating magnetization orientation

APPLIED PHYSICS LETTERS

IF3.6

2023-09-259

PRE

Designed two dimensional transition metal borides (TM2B12): Robust ferromagnetic half metal and antiferromagnetic semiconductor

APPLIED PHYSICS LETTERS

IF3.6

2023-05-106

PRE

Jinlian Lu

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