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Peixiong Gao

South China University of Technology

H指数:15

被引数:605

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Mixed-Mode I-II Fracture Mechanical Behaviors of Frozen Sandstone with Different Initial Saturation Degrees

不同初始饱和度冻结砂岩的混合模式I-II断裂力学行为

Rock Mechanics and Rock Engineering

IF6.6

2026-03-030

PRE

Ultrasensitive and Highly Stretchable Multifunctional Strain Sensors with Timbre-Recognition Ability Based on Vertical Graphene

基于垂直石墨烯的具有音色识别能力的超灵敏高度可拉伸多功能应变传感器

ADVANCED FUNCTIONAL MATERIALS

IF19

2019-10-0969

PREAI

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

具有掺入sc的氧化铟半导体的高性能，溶液处理的量子点发光场效应晶体管

IF16

2018-05-0927

PREAI

High-performance thin-film transistors with solution-processed ScInO channel layer based on environmental friendly precursor

基于环境友好前驱体的具有溶液处理的ScInO沟道层的高性能薄膜晶体管

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-08-3114

PREAI

Solution-processed high-mobility neodymium-substituted indium oxide thin-film transistors formed by facile patterning based on aqueous precursors

APPLIED PHYSICS LETTERS

IF3.6

2017-03-2831

PREAI

All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns

使用表面能图案具有良好稳定性和均匀性的全喷墨印刷金属氧化物薄膜晶体管阵列

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-02-23111

PREAI

Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors

CHEMICAL COMMUNICATIONS

IF4.2

2017-01-016

PREAI

Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors

咖啡环定义喷墨印刷金属氧化物薄膜晶体管的短通道

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-07-2559

PREAI

Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1-xO3 semiconductor

具有新型ScxIn1-xO3半导体的低温，高稳定性，柔性薄膜晶体管

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-05-1213

PREAI

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2016-01-0123

PREAI

High-mobility thin film transistors with neodymium-substituted indium oxide active layer

APPLIED PHYSICS LETTERS

IF3.6

2015-09-1829

PREAI

Studies on NdxIn1-xO3 semiconducting thin films prepared by rf magnetron sputtering

APPLIED PHYSICS LETTERS

IF3.6

2014-10-0922

PREAI