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D

David C. Paine

School of Engineering

H指数:32

被引数:6,485

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Cracking in polymer substrates for flexible electronic devices and its mitigation

聚合物基板在柔性电子器件中的开裂及其缓解

npj Flexible Electronics

IF15.5

2025-08-220

OAAI

Thermal aerial culling for the control of vertebrate pest populations

SCIENTIFIC REPORTS

IF3.9

2023-06-217

OAAI

Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

微波退火提高非晶铟锌氧化物薄膜晶体管的性能

APPLIED SURFACE SCIENCE

IF6.9

2015-12-0111

PREAI

Heavily Doped poly(3,4-ethylenedioxythiophene) Thin Films with High Carrier Mobility Deposited Using Oxidative CVD: Conductivity Stability and Carrier Transport

ADVANCED FUNCTIONAL MATERIALS

IF19

2014-09-1080

PREAI

Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

APPLIED PHYSICS LETTERS

IF3.6

2014-09-0419

PREAI

Metallization selection and the performance of amorphous In-Zn-O thin film transistors

APPLIED PHYSICS LETTERS

IF3.6

2014-06-2413

OAAI

ACUTE-PHASE PERSISTENCE WITH ANTIDEPRESSANT THERAPY AND ASSOCIATED MEDICATION COST AMONG PATIENTS WITH DIABETES: AN ANALYSIS OF COMMERCIALLY INSURED PATIENTS IN RHODE ISLAND

VALUE IN HEALTH

IF6

2014-05-010

OAAI

Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

APPLIED PHYSICS LETTERS

IF3.6

2013-02-0455

PREAI

A Facile Solution-Phase Approach to Transparent and Conducting ITO Nanocrystal Assemblies

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2012-08-01122

PREAI

On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications

APPLIED PHYSICS LETTERS

IF3.6

2011-06-3019

PREAI

High-efficiency silicon-compatible photodetectors based on Ge quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2011-06-0365

PREAI

Transparent conducting oxides for photovoltaics

IF4.9

2011-01-31890

PREAI

High-mobility amorphous In2O3-10 wt %ZnO thin film transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-08-07236

PREAI

Characterization of indium-tin oxide interfaces using X-ray photoelectron spectroscopy and redox processes of a chemisorbed probe molecule: Effect of surface pretreatment conditions

IF3.9

2001-11-08414

PREAI

Strain-dependent electrical resistance of tin-doped indium oxide on polymer substrates

APPLIED PHYSICS LETTERS

IF3.6

2000-03-13606

PREAI