Henry H. Radamson - Publications, H-index & Citations

Henry H. Radamson

Guangdong Greater Bay Area Institute of Integrated Circuit and System

39H指数

353论文数

4.8K被引数

收录论文 72

发表时间

Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging 低缺陷体绝缘体上锗共振腔增强型光电探测器（1550 nm），用于高分辨率短波红外成像

Nanomaterials

IF4.3

2026-03-02

OAAI

Jiale Su; Ben Li; Yuhui Ren; Junhao Du; Xiangliang Duan; Tianyu Dong; Xueyin Su; Tianchun Ye; Xuewei Zhao; Yuanhao Miao; Henry H. Radamson

Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications Ge/GeSi纳米级多层结构中应变与掺杂的优化，用于GOI短波红外成像应用

Nanomaterials

IF4.3

2026-02-26

OAAI

Xuewei Zhao; Yuanhao Miao; Jiale Su; Junhao Du; Yuhui Ren; Ben Li; Tianyu Dong; Xiangliang Duan; Xueyin Su; Henry H. Radamson

Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications 用于低功耗应用的背栅和前栅绝缘体上锗晶体管的制备与表征

Electronics 2025, Vol. 14, Page 4646

IF2.6

2025-11-27

OAAI

Yuhui Ren; Jiale Su; Jiahan Ke; Hongxiao Lin; Ben Li; Zhenzhen Kong; Yiwen Zhang; Junhao Du; Renrong Liang; Jun Xu; Xiangliang Duan; Tianyu Dong; Xueyin Su; Tianchun Ye; Xuewei Zhao; Yuanhao Miao; Henry H. Radamson

Boosting the performance of In0.53Ga0.47As/InP photodetectors with Al2O3/SiNx bilayer passivation technology 采用Al₂O₃/SiNx双层钝化技术提升In₀.₅₃Ga₀.₄₇As/InP光电探测器的性能

Materials Science in Semiconductor Processing

IF4.6

2025-10-22

PREAI

Tianyu Dong; Ben Li; Xuewei Zhao; Junhao Du; Xiangliang Duan; Jiale Su; Fan Zhang; Hongxiao Lin; Yuhui Ren; Yuanhao Miao; Henry H. Radamson

Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives 无冷却微辐射热计中热敏电阻材料与焦平面阵列的融合：趋势与展望

Nanomaterials 2025, Vol. 15, Page 1316

IF0

2025-09-26

OAAI

Bo Wang; Xuewei Zhao; Tianyu Dong; Ben Li; Fan Zhang; Jiale Su; Yuhui Ren; Xiangliang Duan; Hongxiao Lin; Yuanhao Miao; Henry H. Radamson

Enhanced responsivity in GOI photodetectors with engineered SiO2/Si3N4 DBR multilayers for next-generation SWIR imaging applications 采用工程化SiO2/Si3N4 DBR多层膜的高响应度GOI光电探测器，用于下一代短波红外成像应用

Applied Surface Science

IF6.9

2025-08-28

PREAI

Xiangliang Duan; Xuewei Zhao; Jiale Su; Hongxiao Lin; Ziwei Zhou; Tianyu Dong; Junhao Du; Yuanhao Miao; Henry H. Radamson

High-responsivity GOI PIN photodetectors with periodic SiO2/Si DBR structures for SWIR imaging application 高响应度GOI PIN光电探测器，带有周期性SiO2/Si DBR结构，用于SWIR成像应用

materials science materials in electronics

IF0

2025-08-25

PREAI

Jiahan Yu; Xuewei Zhao; Libin Liu; Jiale Su; Junhao Du; Hongxiao Lin; Yuanhao Miao; Tianchun Ye; Henry H. Radamson

Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET 栅长对结less FDSOI应变SiGe沟道p-FinFET电学特性的影响

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

IF2.8

2025-05-24

PREAI

Lin, Hongxiao; Miao, Yuanhao; Ren, Yuhui; Zhang, Yongkui; Zhang, Qingzhu; Xiong, Wenjuan; Yu, Jiahan; Zhao, Xuewei; Liang, Renrong; Xu, Jun; Ye, Tianchun; Radamson, Henry H.

Fabrication and characterization of ferroelectric junctionless GOI and GeSnOI transistors for low-power applications 低功耗应用中 ferroelectric junctionless GOI 和 GeSnOI 晶体管的制备与表征

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

IF2.8

2025-01-16

PREAI

Ren, Yuhui; Ke, Jiahan; Lin, Hongxiao; Zhao, Xuewei; Kong, Zhenzhen; Liang, Renrong; Xu, Jun; Lu, Bin; Miao, Yuanhao; Radamson, Henry H.

Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology 短波长红外倒装凸点键合工艺技术综述

SENSORS

IF3.5

2025-01-05

OAAI

Du, Junhao; Zhao, Xuewei; Su, Jiale; Li, Ben; Duan, Xiangliang; Dong, Tianyu; Lin, Hongxiao; Ren, Yuhui; Miao, Yuanhao; Radamson, Henry H.

Ultrasensitive H2S and CH3SH Sensors Based on SnO2 Porous Structures Utilizing Combination of Flame and Ultrasonic Spray Pyrolysis Methods 基于SnO2多孔结构的超灵敏H2S和CH3SH传感器，结合了火焰和超声喷雾热解方法

IEEE SENSORS JOURNAL

IF4.5

2024-11-15

PREAI

Akbari-Saatlu, Mehdi; Schalk, Malte; Pokhrel, Suman; Mattsson, Claes; Maedler, Lutz; Procek, Marcin; Radamson, Henry H.; Thungstroem, Goran

High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrate

OPTICS LETTERS

IF3.3

2024-05-13

PREAI

Wang, He; Kong, Zhenzhen; Tan, Xinguang; Su, Jiale; Du, Junhao; Lin, Hongxiao; Li, Ben; Wang, Yijie; Zhou, Ziwei; Miao, Yuanhao; Zhao, Xuewei; Hu, Qin; Radamson, Henry h.

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

NANOMATERIALS

IF4.3

2024-05-09

OAAI

Radamson, Henry H.; Miao, Yuanhao; Zhou, Ziwei; Wu, Zhenhua; Kong, Zhenzhen; Gao, Jianfeng; Yang, Hong; Ren, Yuhui; Zhang, Yongkui; Shi, Jiangliu; Xiang, Jinjuan; Cui, Hushan; Lu, Bin; Li, Junjie; Liu, Jinbiao; Lin, Hongxiao; Xu, Haoqing; Li, Mengfan; Cao, Jiaji; He, Chuangqi; Duan, Xiangyan; Zhao, Xuewei; Su, Jiale; Du, Yong; Yu, Jiahan; Wu, Yuanyuan; Jiang, Miao; Liang, Di; Li, Ben; Dong, Yan; Wang, Guilei

High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-03-01

PREAI

Lin, Hongxiao; Zhao, Xing; Luo, Xue; Miao, Yuanhao; Zhang, Yongkui; Kong, Zhenzhen; Wang, Guilei; Yang, Hong; Wu, Zhenhua; Shi, Yunfei; Lu, Bin; Dong, Linpeng; Xiong, Wenjuan; Liang, Renrong; Xu, Jun; Zhao, Xuewei; Ye, Tianchun; Radamson, Henry H.

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions SiGe/Si多层结构的界面研究: 不同外延工艺条件的影响

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-11-21

PREAI

Kong, Zhenzhen; Song, Yanpeng; Wang, Hailing; Liu, Xiaomeng; Wang, Xiangsheng; Liu, Jinbiao; Li, Ben; Su, Jiale; Tan, Xinguang; Luan, Qingjie; Lin, Hongxiao; Ren, Yuhui; Zhang, Yiwen; Liu, Jingxiong; Li, Junfeng; Du, Anyan; Radamson, Henry H.; Zhao, Chao; Ye, Tianchun; Wang, Guilei

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance 锗垂直栅极全包围场效应晶体管的演示，其特征是具有创纪录的高性能的自对准高 κ 金属栅极

ACS NANO

IF16

2023-10-12

PREAI

Xie, Lu; Zhu, Huilong; Zhang, Yongkui; Ai, Xuezheng; Li, Junjie; Wang, Guilei; Liu, Jinbiao; Du, Anyan; Yang, Hong; Yin, Xiaogen; Huang, Weixing; Li, Chen; Li, Yangyang; Wang, Qi; Lu, Shunshun; Kong, Zhenzhen; Xiang, Jinjuan; Du, Yong; Luo, Jun; Li, Junfeng; Radamson, Henry H.; Wang, Wenwu; Ye, Tianchun

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-05-11

PREAI

Kong, Zhenzhen; Li, Zonghu; Cao, Gang; Su, Jiale; Zhang, Yiwen; Liu, Jinbiao; Liu, Jingxiong; Ren, Yuhui; Li, Huihui; Wei, Laiming; Guo, Guo-ping; Wu, Yuanyuan; Radamson, Henry H.; Li, Junfeng; Wu, Zhenhua; Li, Hai-ou; Yang, Jiecheng; Zhao, Chao; Ye, Tianchun; Wang, Guilei

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

NANOMATERIALS

IF4.3

2023-02-02

OAAI

Miao, Yuanhao; Lin, Hongxiao; Li, Ben; Dong, Tianyu; He, Chuangqi; Du, Junhao; Zhao, Xuewei; Zhou, Ziwei; Su, Jiale; Wang, He; Dong, Yan; Lu, Bin; Dong, Linpeng; Radamson, Henry H.

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

MICROMACHINES

IF3

2022-09-22

OAAI

Du, Yong; Wei, Wenqi; Xu, Buqing; Wang, Guilei; Li, Ben; Miao, Yuanhao; Zhao, Xuewei; Kong, Zhenzhen; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Wang, Wenwu; Ye, Tianchun; Zhang, Jianjun; Radamson, Henry H.

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

NANOMATERIALS

IF4.3

2022-08-05

OAAI

Xu, Buqing; Wang, Guilei; Du, Yong; Miao, Yuanhao; Li, Ben; Zhao, Xuewei; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Ye, Tianchun; Radamson, Henry H.

研究方向