未登录
分享
收藏Enhancing the light output power of deep ultraviolet light-emitting diodes with a ultra-thin p-type layer through etching non-ohmic contact p-GaN region通过刻蚀非欧姆接触的p-GaN区域,利用超薄p型层增强深紫外发光二极管的光输出功率
Qiu, Hualiang; Wang, Linhao; Guo, Yanan; Guo, Kai; Zhang, Xiaona; Jia, Xiaolong; Shen, Congmin; Zhang, Tong; Sun, Xue-Jiao; Wei, Xuecheng; Wang, Shen; Wang, Junxi; Li, Jinmin; Zhang, Yonghui; Zhang, Zi-Hui; Liu, Naixin; Yan, Jianchang
分享
收藏
分享
收藏
分享
收藏
分享
收藏Post-removal for the deposited Au metal to increase the light extraction efficiency for AlGaN-based deep-ultraviolet light-emitting diodes
Wang, Linhao; Wang, Bing; Liu, Zhaoqiang; Wu, Yuling; Chu, Chunshang; Tian, Kangkai; Liu, Haoyan; Liu, Naixin; Zhang, Yonghui; Yan, Jianchang; Zhang, Zi-hui
分享
收藏Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN
Wang, Lulu; Duo, Yiwei; Song, Yijian; Huo, Ziqiang; Yang, Jiankun; Ran, Junxue; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Wei, Tongbo
分享
收藏
分享
收藏Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode用于柔性发光二极管的六方氮化硼支持的晶圆级可转移GaN
Wang, Lulu; Yang, Shenyuan; Zhou, Fan; Gao, Yaqi; Duo, Yiwei; Chen, Renfeng; Yang, Jiankun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Zhang, Yanfeng; Wei, Tongbo
分享
收藏
分享
收藏
分享
收藏Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes用于深紫外发光二极管的热退火六边形BN上的应力释放AlN膜的准范德华外延
Wang, Lulu; Yang, Shenyuan; Gao, Yaqi; Yang, Jiankun; Duo, Yiwei; Song, Shun; Yan, Jianchang; Wang, Junxi; Li, Jinmin; Wei, Tongbo
分享
收藏
分享
收藏Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications(vol 104, 107928, 2022)
He, Rui; Liu, Naixin; Gao, Yaqi; Chen, Renfeng; Zhang, Siyao; Yuan, Hongfeng; Duo, Yiwei; Xu, Jintong; Ji, Xiaoli; Yan, Jianchang; Wang, Junxi; Liu, Jianguo; Li, Jinmin; Wei, Tongbo
分享
收藏Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications用于太阳盲通信的单片集成UVC基于AlGaN的多量子阱结构和光子芯片
He, Rui; Liu, Naixin; Gao, Yaqi; Chen, Renfeng; Zhang, Siyao; Yuan, Hongfeng; Duo, Yiwei; Xu, Jintong; Ji, Xiaoli; Yan, Jianchang; Wang, Junxi; Liu, Jianguo; Li, Jinmin; Wei, Tongbo
分享
收藏Graphene-Assisted Epitaxy of High-Quality GaN Films on GaN Templates
Feng, Tao; Zhang, Shuo; Yang, Kailai; Chen, Qi; Liang, Meng; Yan, Jianchang; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Liu, Zhiqiang
分享
收藏Continuous Single-Crystalline GaN Film Grown on WS2-Glass Wafer
Yin, Yue; Liu, Bingyao; Chen, Qi; Chen, Zhaolong; Ren, Fang; Zhang, Shuo; Liu, Zhetong; Wang, Rong; Liang, Meng; Yan, Jianchang; Sun, Jingyu; Yi, Xiaoyan; Wei, Tongbo; Wang, Junxi; Li, Jinmin; Liu, Zhongfan; Gao, Peng; Liu, Zhiqiang
分享
收藏
分享
收藏Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction
Wu, Gang; Tang, Libin; Deng, Gongrong; Liu, Lining; Hao, Qun; Yuan, Shouzhang; Wang, Jingyu; Wei, Hong; Zhao, Yupeng; Yue, Biao; Shi, Jingmei; Tan, Ying; Li, Rujie; Zhang, Yiyun; Yan, Jianchang; Yi, Xiaoyan; Wang, Junxi; Kong, Jincheng; Li, Jinmin
分享
收藏
分享
收藏