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F. Omnès

centre national de la recherche scientifique (cnrs)

36H指数
196论文数
4.0K被引数
收录论文 21
发表时间
Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing
err2015-01-01
err28
errOAAI
errHebert, Clement; Warnking, Jan; Depaulis, Antoine; Garcon, Laurie Amandine; Mermoux, Michel; Eon, David; Mailley, Pascal; Omnes, Franck
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Boron-doped superlattices and Bragg mirrors in diamond
err2014-08-27
err9
errOAAI
errFiori, A.; Bousquet, J.; Eon, D.; Omnes, F.; Bellet-Amalric, E.; Bustarret, E.
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Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores
errCARBON
IF11.6
err2013-08-01
err56
errOAAI
errMehadi, Hasan-al; Arnault, Jean-Charles; Eon, David; Hebert, Clement; Carole, Davy; Omnes, Franck; Gheeraert, Etienne
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A composite material made of carbon nanotubes partially embedded in a nanocrystalline diamond film
errCARBON
IF11.6
err2013-02-01
err18
PREAI
errHebert, Clement; Ruffinatto, Sebastien; Eon, David; Mermoux, Michel; Gheeraert, Etienne; Omnes, Franck; Mailley, Pascal
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High Sensitivity of Diamond Resonant Microcantilevers for Direct Detection in Liquids As Probed by Molecular Electrostatic Surface Interactions
err2011-08-30
err12
errOAAI
errBongrain, Alexandre; Agnes, Charles; Rousseau, Lionel; Scorsone, Emmanuel; Arnault, Jean-Charles; Ruffinatto, Sebastien; Omnes, Franck; Mailley, Pascal; Lissorgues, Gaeelle; Bergonzo, Philippe
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The Diamond Superconducting Quantum Interference Device
err2011-08-04
err59
errOAAI
errMandal, Soumen; Bautze, Tobias; Williams, Oliver A.; Naud, Cecile; Bustarret, Etienne; Omnes, Franck; Rodiere, Pierre; Meunier, Tristan; Baeuerle, Christopher; Saminadayar, Laurent
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Extreme dielectric strength in boron doped homoepitaxial diamond
err2010-11-29
err145
errOAAI
errVolpe, Pierre-Nicolas; Muret, Pierre; Pernot, Julien; Omnes, Franck; Teraji, Tokuyuki; Koide, Yasuo; Jomard, Francois; Planson, Dominique; Brosselard, Pierre; Dheilly, Nicolas; Vergne, Bertrand; Scharnholz, Sigo
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Hall hole mobility in boron-doped homoepitaxial diamond
err2010-05-07
err141
PREAI
errPernot, J.; Volpe, P. N.; Omnes, F.; Muret, P.; Mortet, V.; Haenen, K.; Teraji, T.
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High hole mobility in boron doped diamond for power device applications
err2009-03-03
err140
PREAI
errVolpe, Pierre-Nicolas; Pernot, Julien; Muret, Pierre; Omnes, Franck
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Stability of B-H and B-D complexes in diamond under electron beam excitation
err2008-08-14
err15
errOAAI
errBarjon, J.; Mehdaoui, A.; Jomard, F.; Chevallier, J.; Mer, C.; Nesladek, M.; Bergonzo, P.; Pernot, J.; Omnes, F.; Deneuville, A.
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Metal-insulator transition and superconductivity in boron-doped diamond
err2007-04-17
err172
errOAAI
errKlein, T.; Achatz, P.; Kacmarcik, J.; Marcenat, C.; Gustafsson, F.; Marcus, J.; Bustarret, E.; Pernot, J.; Omnes, F.; Sernelius, Bo E.; Persson, C.; da Silva, A. Ferreira; Cytermann, C.
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Impurity dimers in superconducting B-doped diamond:: Experiment and first-principles calculations
err2006-09-20
err90
PREAI
errBourgeois, E.; Bustarret, E.; Achatz, P.; Omnes, F.; Blase, X.
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Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
err2005-02-03
err16
PREAI
errDuboz, JY; Grandjean, N; Omnes, F; Mosca, M; Reverchon, JL
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Intrinsic compensation of silicon-doped AlGaN
err2003-11-17
err25
PREAI
errWagener, MC; James, GR; Omnès, F
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Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection
err2002-04-29
err85
PREAI
errMonroy, E; Palacios, T; Hainaut, O; Omnès, F; Calle, F; Hochedez, JF
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Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
err2001-01-15
err55
PREAI
errRuterana, P; Jores, GD; Laügt, M; Omnes, F; Bellet-Amalric, E
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Interface properties of AlxGa1-xN/AlN heterostructures from optical waveguiding information
err1999-11-22
err21
PREAI
errDogheche, E; Belgacem, B; Remiens, D; Ruterana, P; Omnes, F
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Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
err1999-10-25
err48
PREAI
errSchenk, HPD; de Mierry, P; Laügt, M; Omnès, F; Leroux, M; Beaumont, B; Gibart, P
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