Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator processAPPLIED SURFACE SCIENCEIF6.92026-01-210OAAI
Smart Cut Transfer of Wide-Bandgap Materials: The Case of DiamondPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEIF1.92025-11-011OAAI
Transfer of diamond thin films using Smart CutTM technology利用Smart CutTM技术转移金刚石薄膜DIAMOND AND RELATED MATERIALSIF5.12025-05-010OAAI
Investigation of lasing in highly strained germanium at the crossover to direct band gapPHYSICAL REVIEW RESEARCHIF4.22022-07-186OA
Accurate strain measurements in highly strained Ge microbridgesAPPLIED PHYSICS LETTERSIF3.62016-06-1344OAAI
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applicationsAPPLIED PHYSICS LETTERSIF3.62015-11-1185OAAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向