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J

J. H. Weaver

University of Illinois System

53H指数
354论文数
1.1W被引数
收录论文 26
发表时间
Adsorbate-induced roughening of Si(100) by interactions at steps
err2010-07-19
err5
errOAAI
errButera, R. E.; Mirabella, D. A.; Aldao, C. M.; Weaver, J. H.
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Adsorbate-mediated step transformations and terrace rearrangement of Si(100)-(2x1)
err2009-11-24
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PREAI
errButera, R. E.; Suwa, Yuji; Hashizume, Tomihiro; Weaver, J. H.
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Size dependence of nanoparticle dissolution in a matrix: Gold in bismuth
err2009-04-17
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PREAI
errSwaminathan, P.; Sivaramakrishnan, S.; Palmer, J. S.; Weaver, J. H.
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Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
err2009-03-06
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errOAAI
errAldao, C. M.; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.
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Competition between particle formation and burrowing: Gold on bismuth
err2008-09-17
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PREAI
errSwaminathan, P.; Palmer, J. S.; Weaver, J. H.
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Solid-state dewetting-mediated aggregation of nanoparticles
err2008-05-15
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PREAI
errPalmer, J. S.; Swaminathan, P.; Babar, S.; Weaver, J. H.
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Induced magnetism in Cu nanoparticles embedded in Co嵌入Co的Cu纳米颗粒中的感应磁性
err2007-11-14
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PREAI
errSwaminathan, P.; Rosenberg, R. A.; Shenoy, G. K.; Palmer, J. S.; Weaver, J. H.
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Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth
err2007-01-02
err17
PREAI
errBhatti, A. S.; Antonov, V. N.; Swaminathan, P.; Palmer, J. S.; Weaver, J. H.
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Phonon-activated electron-stimulated desorption of halogens from Si(100)-(2x1)
err2006-03-15
err19
PREAI
errTrenhaile, BR; Antonov, VN; Xu, GJ; Agrawal, A; Signor, AW; Butera, RE; Nakayama, KS; Weaver, JH
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Electronic structure of Si(001)-c(4x2) analyzed by scanning tunneling spectroscopy and ab initio simulations [vol 73, art no 035330, 2006)
err2006-02-07
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errOAAI
errNakayama, KS; Alemany, MMG; Sugano, T; Ohmori, K; Kwak, H; Chelikowsky, JR; Weaver, JH
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Electronic structure of Si(001)-c(4 x 2) analyzed by scanning tunneling spectroscopy and ab initio simulations -: art. no. 035330
err2006-01-26
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PREAI
errNakayama, KS; Alemany, MMG; Sugano, T; Ohmori, K; Kwak, H; Chelikowsky, JR; Weaver, JH
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Crossover energetics for halogenated Si(100): Vacancy line defects, dimer vacancy lines, and atom vacancy lines
err2005-03-30
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PREAI
errXu, GJ; Zarkevich, NA; Agrawal, A; Signor, AW; Trenhaile, BR; Johnson, DD; Weaver, JH
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Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K
err2003-12-12
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errOAAI
errXu, GJ; Khare, SV; Nakayama, KS; Aldao, CM; Weaver, JH
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Atom vacancy lines and surface patterning: The role of stress for Br-Si(100)-(2x1) at 700 K
err2003-08-01
err17
PREAI
errXu, GJ; Graugnard, E; Trenhaile, BR; Nakayama, KS; Weaver, JH
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Dynamics of surface roughening of Cl-terminated Si(100)-(2x1) at 700 K
err2003-03-31
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PREAI
errXu, GJ; Graugnard, E; Petrova, V; Nakayama, KS; Weaver, JH
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Equilibrium morphologies for Cl-roughened Si(100) at 700-750 K: Dependence on Cl concentration
err2003-03-31
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errOAAI
errXu, GJ; Nakayama, KS; Trenhaile, BR; Aldao, CM; Weaver, JH
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