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Tamotsu Hashizume

Hokkaido University

42H指数
426论文数
7.3K被引数
收录论文 30
发表时间
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Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures (vol 91, pg 356, 2019)
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-04-01
err0
PREAI
errTapajna, M.; Drobny, J.; Gucmann, F.; Husekova, K.; Gregusova, D.; Hashizume, T.; Kuzmik, J.
err分享
err收藏
Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructuresAlGaN/GaN金属-氧化物-半导体异质结构中氧化物/势垒电荷对阈值电压不稳定性的影响
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2019-03-01
err6
PREAI
errTapajna, M.; Drobny, J.; Gucmann, F.; Husekova, K.; Gregusova, D.; Hashizume, T.; Kuzmik, J.
err分享
err收藏
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2018-05-01
err116
errOAAI
errHashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji
err分享
err收藏
High Thermoelectric Power Factor of High-Mobility 2D Electron Gas
errADVANCED SCIENCE
IF14.1
err2017-11-24
err55
errOAAI
errOhta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu
err分享
err收藏
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-10-18
err92
PREAI
errKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu
err分享
err收藏
Insulated gate and surface passivation structures for GaN-based power transistors
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2016-09-07
err186
errOAAI
errYatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu
err分享
err收藏
Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit常通型GaN HEMT及其栅极驱动电路的实验验证
errIEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
IF4.5
err2015-05-01
err40
PREAI
errIshibashi, Takaharu; Okamoto, Masayuki; Hiraki, Eiji; Tanaka, Toshihiko; Hashizume, Tamotsu; Kikuta, Daigo; Kachi, Tetsu
err分享
err收藏
Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-08-07
err32
errOAAI
errAsubar, Joel T.; Yatabe, Zenji; Hashizume, Tamotsu
err分享
err收藏
Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-07-08
err17
errOAAI
errMatys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.
err分享
err收藏
Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-12-06
err25
errOAAI
errMatys, M.; Adamowicz, B.; Hashizume, T.
err分享
err收藏
Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-09-18
err6
errOAAI
errYoshida, Toshiyuki; Hashizume, Tamotsu
err分享
err收藏
Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-04-07
err5
PREAI
errAkazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.
err分享
err收藏
Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-03-31
err56
errOAAI
errAkazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.
err分享
err收藏
Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2010-01-01
err7
errOAAI
errSato, Taketomo; Mizohata, Akinori; Hashizume, Tamotsu
err分享
err收藏
Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-04-16
err15
errOAAI
errSugawara, Katsuya; Kotani, Junji; Hashizume, Tamotsu
err分享
err收藏
Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-08-28
err100
PREAI
errKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu
err分享
err收藏
Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-03-06
err17
errOAAI
errNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu
err分享
err收藏
Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures
errSOLAR ENERGY
IF6.6
err2006-06-01
err17
PREAI
errHasegawa, Hideki; Sato, Taketomo; Kasai, Seiya; Adamowicz, Boguslawa; Hashizume, Tamotsu
err分享
err收藏
Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
errAPPLIED SURFACE SCIENCE
IF6.9
err2005-05-01
err78
PREAI
errMatsuo, K; Negoro, N; Kotani, J; Hashizume, T; Hasegawa, H
err分享
err收藏
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivationGaAs量子线中与表面相关的光致发光减少及其通过新钝化的恢复
errAPPLIED SURFACE SCIENCE
IF6.9
err2005-05-01
err1
errOAAI
errShiozaki, N; Anantathanasarn, S; Sato, T; Hashizume, T; Hasegawa, H
err分享
err收藏

研究方向

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合作学者
合作期刊
H
Hiromichi Ohta
H 指数: 72 · 论文数: 815
H
Hideki Hasegawa
H 指数: 68 · 论文数: 595
H
Hiroshi Hasegawa
H 指数: 61 · 论文数: 948
T
Takashi Fukui
H 指数: 54 · 论文数: 489
S
Sung Wng Kim
H 指数: 53 · 论文数: 262
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