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G

G. Borghs

interuniversity microelectronics centre

51H指数
586论文数
1.0W被引数
收录论文 67
发表时间
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Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2014-12-08
err78
PREAI
errTseng, W. J.; van Dorp, D. H.; Lieten, R. R.; Vereecken, P. M.; Borghs, G.
err分享
err收藏
Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2014-05-19
err13
PREAI
errTseng, Wei-Jhih; van Dorp, D. H.; Lieten, R. R.; Vereecken, P. M.; Langer, R.; Borghs, G.
err分享
err收藏
Spin and phase coherence lengths in InAs wires with diffusive boundary scattering
errPHYSICAL REVIEW B
IF3.7
err2013-11-07
err10
errOAAI
errKallaher, R. L.; Heremans, J. J.; Van Roy, W.; Borghs, G.
err分享
err收藏
Strain relaxation in GaN nanopillars
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-12-17
err26
PREAI
errTseng, W. J.; Gonzalez, M.; Dillemans, L.; Cheng, K.; Jiang, S. J.; Vereecken, P. M.; Borghs, G.; Lieten, R. R.
err分享
err收藏
Plasmon filters and resonators in metal-insulator-metal waveguides
errOPTICS EXPRESS
IF3.3
err2012-01-30
err99
errOAAI
errNeutens, P.; Lagae, L.; Borghs, G.; Van Dorpe, P.
err分享
err收藏
A deep-level analysis of Ni-Au/AlN/(111) p+-Si metal-insulator-semiconductor capacitors
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2011-11-08
err16
PREAI
errSimoen, E.; Visalli, D.; Van Hove, M.; Leys, M.; Borghs, G.
err分享
err收藏
Mg doping of GaN by molecular beam epitaxy
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2011-03-16
err30
PREAI
errLieten, R. R.; Motsnyi, V.; Zhang, L.; Cheng, K.; Leys, M.; Degroote, S.; Buchowicz, G.; Dubon, O.; Borghs, G.
err分享
err收藏
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2011-01-01
err48
PREAI
errLieten, R. R.; Afanas'ev, V. V.; Thoan, N. H.; Degroote, S.; Walukiewicz, W.; Borghs, G.
err分享
err收藏
Suppression of complex domain wall behavior in Ni80Fe20 nanowires by oscillating magnetic fields
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-02-08
err13
PREAI
errWeerts, K.; Van Roy, W.; Borghs, G.; Lagae, L.
err分享
err收藏
Hydrogen and inert species in solid phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-02-02
err11
PREAI
errLieten, R. R.; Degroote, S.; Clemente, F.; Leys, M.; Borghs, G.
err分享
err收藏
Doppler shift in Andreev reflection from a moving superconducting condensate in Nb/InAs Josephson junctions
errPHYSICAL REVIEW B
IF3.7
err2009-12-28
err36
errOAAI
errRohlfing, F.; Tkachov, G.; Otto, F.; Richter, K.; Weiss, D.; Borghs, G.; Strunk, C.
err分享
err收藏
Glutamate sensing with enzyme-modified floating-gate field effect transistors
errBIOSENSORS & BIOELECTRONICS
IF10.5
err2009-04-01
err26
PREAI
errBraeken, D.; Rand, D. R.; Andrei, A.; Huys, R.; Spira, M. E.; Yitzchaik, S.; Shappir, J.; Borghs, G.; Callewaert, G.; Bartic, C.
err分享
err收藏
Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-03-20
err21
errOAAI
errLieten, R. R.; Degroote, S.; Leys, M.; Posthuma, N. E.; Borghs, G.
err分享
err收藏
Chemical and Biological Characterization of Thiol SAMs for Neuronal Cell Attachment
errLANGMUIR
IF3.9
err2009-03-13
err16
PREAI
errJans, K.; Van Meerbergen, B.; Reekmans, G.; Bonroy, K.; Annaert, W.; Maes, G.; Engelborghs, Y.; Borghs, G.; Bartic, C.
err分享
err收藏
High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-05-15
err86
PREAI
errCheng, Kai; Leys, M.; Degroote, S.; Germain, M.; Borghs, G.
err分享
err收藏
Pulsed field induced magnetization switching in (Ga,Mn)As
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-03-21
err7
PREAI
errLi, Z.; Mol, J. A.; Lagae, L.; Borghs, G.; Mertens, R.; Van Roy, W.
err分享
err收藏
Phase diagram of a mesoscopic superconducting Pb square: Ballistic Hall magnetometry
errPHYSICAL REVIEW B
IF3.7
err2007-11-07
err5
errOAAI
errVervaeke, K.; De Keyser, K.; Menghini, M.; Carballeira, C.; Borghs, G.; Moshchalkov, V. V.
err分享
err收藏
Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-08-30
err10
PREAI
errZhang, Y.; McAleese, C.; Xiu, H.; Humphreys, C. J.; Lieten, R. R.; Degroote, B.; Borghs, G.
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err收藏
Detection of nanomechanical motion by evanescent light wave coupling
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-06-11
err41
errOAAI
errDe Vlaminck, I.; Roels, J.; Taillaert, D.; Van Thourhout, D.; Baets, R.; Lagae, L.; Borghs, G.
err分享
err收藏
Growth of GaN on Ge(111) by molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-12-22
err28
errOAAI
errLieten, R. R.; Degroote, S.; Cheng, K.; Leys, M.; Kuijk, M.; Borghs, G.
err分享
err收藏

研究方向

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