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P

P. Kordoš

slovak academy of sciences

36H指数
402论文数
4.7K被引数
收录论文 52
发表时间
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Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-01-27
err20
errOAAI
errMikulics, M.; Kordos, P.; Gregusova, D.; Sofer, Z.; Winden, A.; Trellenkamp, St.; Moers, J.; Mayer, J.; Hardtdegen, H.
err分享
err收藏
Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
errAPPLIED MATERIALS TODAY
IF6.9
err2017-06-01
err29
PREAI
errMikulics, M.; Kordos, P.; Fox, A.; Kocan, M.; Lueth, H.; Sofer, Z.; Hardtdegen, H.
err分享
err收藏
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
errAPPLIED SURFACE SCIENCE
IF6.9
err2017-02-01
err10
PREAI
errGregusova, D.; Gucmann, F.; Kudela, R.; Micusik, M.; Stoklas, R.; Valik, L.; Gregus, J.; Blaho, M.; Kordos, P.
err分享
err收藏
Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-02-12
err44
PREAI
errMikulics, M.; Arango, Y. C.; Winden, A.; Adam, R.; Hardtdegen, A.; Gruetzmacher, D.; Plinski, E.; Gregusova, D.; Novak, J.; Kordos, P.; Moonshiram, A.; Marso, M.; Sofer, Z.; Lueth, H.; Hardtdegen, H.
err分享
err收藏
Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps具有界面陷阱的氮化铝镓/氮化镓异质结构的低频和高频电容
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2015-03-01
err6
PREAI
errOsvald, J.; Stoklas, R.; Kordos, P.
err分享
err收藏
Reduction of skin effect losses in double-level-T-gate structure
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-12-08
err5
errOAAI
errMikulics, M.; Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Gruetzmacher, D.; Gregusova, D.; Stancek, S.; Novak, J.; Kordos, P.; Sofer, Z.; Juul, L.; Marso, M.
err分享
err收藏
InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-11-03
err13
PREAI
errGucmann, F.; Gregusova, D.; Stoklas, R.; Derer, J.; Kudela, R.; Froehlich, K.; Kordos, P.
err分享
err收藏
Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-02-11
err8
PREAI
errKordos, P.; Stoklas, R.; Gregusova, D.; Husekova, K.; Carlin, J. -F.; Grandjean, N.
err分享
err收藏
Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-04-05
err19
PREAI
errKordos, P.; Kudela, R.; Stoklas, R.; Cico, K.; Mikulics, M.; Gregusova, D.; Novak, J.
err分享
err收藏
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
errVACUUM
IF3.9
err2012-01-01
err7
PREAI
errMikulics, M.; Fox, A.; Marso, M.; Gruetzmacher, D.; Donoval, D.; Kordos, P.
err分享
err收藏
Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-04-22
err12
PREAI
errKovac, J.; Sramaty, R.; Chvala, A.; Sibboni, H.; Morvan, E.; DiForte-Poisson, M. A.; Donoval, D.; Kordos, P.
err分享
err收藏
InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-10-25
err20
PREAI
errMikulics, M.; Stoklas, R.; Dadgar, A.; Gregusova, D.; Novak, J.; Gruetzmacher, D.; Krost, A.; Kordos, P.
err分享
err收藏
Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-06-01
err40
PREAI
errDonoval, D.; Chvala, A.; Sramaty, R.; Kovac, J.; Carlin, J. -F.; Grandjean, N.; Pozzovivo, G.; Kuzmik, J.; Pogany, D.; Strasser, G.; Kordos, P.
err分享
err收藏
Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-01-05
err46
errOAAI
errKordos, P.; Stoklas, R.; Gregusova, D.; Gazi, S.; Novak, J.
err分享
err收藏
Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-06-05
err77
PREAI
errKordos, P.; Stoklas, R.; Gregusova, D.; Novak, J.
err分享
err收藏
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-09-22
err99
PREAI
errStoklas, R.; Gregusova, D.; Novak, J.; Vescan, A.; Kordos, P.
err分享
err收藏
Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-04-17
err48
PREAI
errKordos, P.; Donoval, D.; Florovic, M.; Kovac, J.; Gregusova, D.
err分享
err收藏
Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-03-23
err88
PREAI
errKordos, P.; Gregusova, D.; Stoklas, R.; Cico, K.; Novak, J.
err分享
err收藏
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-08-28
err4
PREAI
errMikulics, Martin; Marso, Michel; Mantl, Siegfried; Lueth, Hans; Kordos, Peter
err分享
err收藏
Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-08-15
err15
errOAAI
errMikulics, M.; Michael, E. A.; Marso, M.; Lepsa, M.; van der Hart, A.; Luth, H.; Dewald, A.; Stancek, S.; Mozolik, M.; Kordos, P.
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
Z
Zdeněk Sofer
H 指数: 98 · 论文数: 1.1K
N
N. Grandjean
H 指数: 71 · 论文数: 787
H
H. Lüth
H 指数: 69 · 论文数: 860
A
Andrew J. Fox
H 指数: 64 · 论文数: 644
J
Joachim Mayer
H 指数: 63 · 论文数: 863
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