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G. Nouet

shanghai institute of microsystem & information technology, cas

35H指数
371论文数
4.1K被引数
收录论文 49
发表时间
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The methods to detect vacuum polarization by evanescent modes
err2011-08-04
err44
errOAAI
errLi, Wei; Chen, Jun; Nouet, Gerard; Chen, Liang-yao; Jiang, Xunya
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First principles investigation of barium chalcogenide ternary alloys
err2009-08-01
err23
PREAI
errDrablia, S.; Meradji, H.; Ghemid, S.; Nouet, G.; Hassan, F. El Haj
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Study of the properties of CuInSe2 materials prepared from nanoparticle powder
err2009-05-01
err25
PREAI
errMehdaoui, S.; Benslim, N.; Aissaoui, O.; Benabdeslem, M.; Bechiri, L.; Otmani, A.; Portier, X.; Nouet, G.
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Contribution study of properties of copper indium diselenide thin films
errVACUUM
IF3.9
err2008-06-01
err1
PREAI
errMehdaoui, S.; Aissaoui, O.; Benslim, N.; Benabdesslem, M.; Bechiri, L.; Mahdjoubi, L.; Nouet, G.
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Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films
err2007-09-21
err12
PREAI
errAissaoui, O.; Mehdaoui, S.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Mahdjoubi, L.; Nouet, G.
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Photonic band gap structures in the Thue-Morse lattice
err2007-05-14
err44
PREAI
errLei, Huaping; Chen, Jun; Nouet, Gerard; Feng, Songling; Gong, Qian; Jiang, Xunya
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Core structures of the a-edge dislocation in InN
err2007-03-12
err17
PREAI
errLei, H. P.; Ruterana, P.; Nouet, G.; Jiang, X. Y.; Chen, J.
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Atomistic modeling of the (a plus c)-mixed dislocation core in wurtzite GaN
err2007-03-06
err42
errOAAI
errBelabbas, I.; Bere, A.; Chen, J.; Petit, S.; Belkhir, M. Akli; Ruterana, P.; Nouet, G.
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Strain distribution of thin InN epilayers grown on (0001) GaN templates by molecular beam epitaxy
err2007-02-08
err14
PREAI
errDelimitis, A.; Komninou, Ph.; Dimitrakopulos, G. P.; Kehagias, Th.; Kioseoglou, J.; Karakostas, Th.; Nouet, G.
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Research on fabrication and properties of nanoporous GaN epilayers
err2006-12-01
err8
PREAI
errWang Xiaolong; Yu Guanghui; Wang Xinzhong; Lin Chaotong; Lei Benliang; Qi Ming; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Growth of high-quality thick GaN using a tungsten interlayer
err2006-12-01
err3
PREAI
errWang Xinzhong; Yu Guanghui; Lei Benliang; Lin Chaotong; Wang Xiaolong; Qi Ming; Li Aizhen; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxyAlN中间层对氢化物气相外延生长GaN薄膜的影响
err2006-12-01
err2
PREAI
errLin Chaotong; Yu Guanghui; Lei Benliang; Wang Xinzhong; Ye Haohua; Meng Sheng; Qi Ming; Li Aizhen; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Atomic core structure of 90° (c)over-right-arrow-bent screw threading dislocations in wurtzite GaN
err2006-12-01
err0
PREAI
errBelabbas, Imad; Chen Jun; Ruterana, Pierre; Yu Guanghui; Nouet, Gerard
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Stillinger-Weber parameters for In and N atoms
err2006-10-01
err22
PREAI
errLei, H. P.; Chen, J.; Petit, S.; Ruterana, R.; Jiang, X. Y.; Nouet, G.
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Energetics of the 30° Shockley partial dislocation in wurtzite GaN
err2006-10-01
err11
PREAI
errBelabbas, I.; Dimitrakopulos, G.; Kioseoglou, J.; Bere, A.; Chen, J.; Komninou, Ph.; Ruterana, P.; Nouet, G.
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Local electronic structure of threading screw dislocation in wurtzite GaN
err2006-09-01
err19
PREAI
errBelabbas, I.; Belkhir, M. A.; Lee, Y. H.; Chen, J.; Bere, A.; Ruterana, P.; Nouet, G.
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Fabrication and characterisation of CuInSe2/Si(100) thin films by the stacked elemental layer (SEL) technique
err2006-04-01
err6
PREAI
errBechiri, L; Benabdeslem, M; Benslim, N; Djekoun, A; Otmani, A; Mahdjoubi, L; Madelon, R; Ruterana, P; Nouet, G
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