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G
G. Nouet
shanghai institute of microsystem & information technology, cas
35
H指数
371
论文数
4.1K
被引数
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49
发表时间
发表时间
IF
被引数
Electronic structure and metallization effects at threading dislocation cores in GaN
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2014-07-01
40
PRE
AI
Belabbas, I.; Chen, J.; Nouet, G.
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The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2013-11-01
11
PRE
AI
Belabbas, I.; Chen, J.; Komninou, Ph.; Nouet, G.
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A new atomistic model for the threading screw dislocation core in wurtzite GaN
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2012-01-01
18
PRE
AI
Belabbas, I.; Chen, J.; Nouet, G.
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The methods to detect vacuum polarization by evanescent modes
APPLIED PHYSICS LETTERS
IF
3.6
2011-08-04
44
OA
AI
Li, Wei; Chen, Jun; Nouet, Gerard; Chen, Liang-yao; Jiang, Xunya
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First principles investigation of barium chalcogenide ternary alloys
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2009-08-01
23
PRE
AI
Drablia, S.; Meradji, H.; Ghemid, S.; Nouet, G.; Hassan, F. El Haj
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Study of the properties of CuInSe2 materials prepared from nanoparticle powder
MATERIALS CHARACTERIZATION
IF
5.5
2009-05-01
25
PRE
AI
Mehdaoui, S.; Benslim, N.; Aissaoui, O.; Benabdeslem, M.; Bechiri, L.; Otmani, A.; Portier, X.; Nouet, G.
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Contribution study of properties of copper indium diselenide thin films
VACUUM
IF
3.9
2008-06-01
1
PRE
AI
Mehdaoui, S.; Aissaoui, O.; Benslim, N.; Benabdesslem, M.; Bechiri, L.; Mahdjoubi, L.; Nouet, G.
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Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2007-09-21
12
PRE
AI
Aissaoui, O.; Mehdaoui, S.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Mahdjoubi, L.; Nouet, G.
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Photonic band gap structures in the Thue-Morse lattice
PHYSICAL REVIEW B
IF
3.7
2007-05-14
44
PRE
AI
Lei, Huaping; Chen, Jun; Nouet, Gerard; Feng, Songling; Gong, Qian; Jiang, Xunya
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Core structures of the a-edge dislocation in InN
APPLIED PHYSICS LETTERS
IF
3.6
2007-03-12
17
PRE
AI
Lei, H. P.; Ruterana, P.; Nouet, G.; Jiang, X. Y.; Chen, J.
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Atomistic modeling of the (a plus c)-mixed dislocation core in wurtzite GaN
PHYSICAL REVIEW B
IF
3.7
2007-03-06
42
OA
AI
Belabbas, I.; Bere, A.; Chen, J.; Petit, S.; Belkhir, M. Akli; Ruterana, P.; Nouet, G.
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Strain distribution of thin InN epilayers grown on (0001) GaN templates by molecular beam epitaxy
APPLIED PHYSICS LETTERS
IF
3.6
2007-02-08
14
PRE
AI
Delimitis, A.; Komninou, Ph.; Dimitrakopulos, G. P.; Kehagias, Th.; Kioseoglou, J.; Karakostas, Th.; Nouet, G.
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Research on fabrication and properties of nanoporous GaN epilayers
RARE METALS
IF
11
2006-12-01
8
PRE
AI
Wang Xiaolong; Yu Guanghui; Wang Xinzhong; Lin Chaotong; Lei Benliang; Qi Ming; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Growth of high-quality thick GaN using a tungsten interlayer
RARE METALS
IF
11
2006-12-01
3
PRE
AI
Wang Xinzhong; Yu Guanghui; Lei Benliang; Lin Chaotong; Wang Xiaolong; Qi Ming; Li Aizhen; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy
AlN中间层对氢化物气相外延生长GaN薄膜的影响
RARE METALS
IF
11
2006-12-01
2
PRE
AI
Lin Chaotong; Yu Guanghui; Lei Benliang; Wang Xinzhong; Ye Haohua; Meng Sheng; Qi Ming; Li Aizhen; Nouet, Gerard; Ruterana, Pierre; Chen Jun
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Atomic core structure of 90° (c)over-right-arrow-bent screw threading dislocations in wurtzite GaN
RARE METALS
IF
11
2006-12-01
0
PRE
AI
Belabbas, Imad; Chen Jun; Ruterana, Pierre; Yu Guanghui; Nouet, Gerard
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Stillinger-Weber parameters for In and N atoms
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2006-10-01
22
PRE
AI
Lei, H. P.; Chen, J.; Petit, S.; Ruterana, R.; Jiang, X. Y.; Nouet, G.
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Energetics of the 30° Shockley partial dislocation in wurtzite GaN
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2006-10-01
11
PRE
AI
Belabbas, I.; Dimitrakopulos, G.; Kioseoglou, J.; Bere, A.; Chen, J.; Komninou, Ph.; Ruterana, P.; Nouet, G.
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Local electronic structure of threading screw dislocation in wurtzite GaN
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2006-09-01
19
PRE
AI
Belabbas, I.; Belkhir, M. A.; Lee, Y. H.; Chen, J.; Bere, A.; Ruterana, P.; Nouet, G.
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Fabrication and characterisation of CuInSe2/Si(100) thin films by the stacked elemental layer (SEL) technique
CATALYSIS TODAY
IF
5.3
2006-04-01
6
PRE
AI
Bechiri, L; Benabdeslem, M; Benslim, N; Djekoun, A; Otmani, A; Mahdjoubi, L; Madelon, R; Ruterana, P; Nouet, G
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